Si1470DH
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
30
RDS(on) (Ω)
ID (A)
0.066 at VGS = 4.5 V
4.0a
0.095 at VGS = 2.5 V
4.0
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
4.85
SOT-363
SC-70 (6-LEADS)
APPLICATIONS
• Load Switch
D
1
6
D
D
D
G
5
2
3
4
D
AK
XX
YY
Marking Code
Lot Traceability
and Date Code
S
G
Part # Code
Top View
S
Ordering Information: Si1470DH-T1-E3 (Lead (Pb)-free)
Si1470DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
± 12
Continuous Drain Current (TJ = 150 °C)a
TC = 25 °C
5.1
TC = 70 °C
4.0
TA = 25 °C
ID
Avalanche Current
Repetitive Avalanche Energy
Continuous Source-Drain Diode Current
L = 0.1 mH
TC = 25 °C
TA = 25 °C
TC = 70 °C
TA = 25 °C
IDM
12
IAS
10
EAS
5
mJ
2.3
IS
A
1.3b, c
2.8
1.8
PD
W
1.5b, c
1.0b, c
TA = 70 °C
Operating Junction and Storage Temperature Range
A
3.1b, c
TC = 25 °C
Maximum Power Dissipationa
V
3.8b, c
TA = 70 °C
Pulsed Drain Current
Unit
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Maximum Junction-to-Ambientb, d
t≤5s
RthJA
60
80
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
34
45
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 125 °C/W.
Document Number: 74277
S10-0646-Rev. B, 22-Mar-10
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Si1470DH
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/
ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
IGSS
VDS Temperature Coefficient
Gate-Source Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductance
RDS(on)
gfs
V
27.41
mV/°C
- 3.83
1.6
V
VDS = 0 V, VGS = ± 12 V
± 100
nA
VDS = 30 V, VGS = 0 V
1
nA
VDS = 30 V, VGS = 0 V, TJ = 85 °C
10
µA
VDS = ≥ 5 V, VGS = 4.5 V
0.6
12
A
VGS = 4.5 V, ID = 3.8 A
0.055
0.066
VGS = 2.5 V, ID = 3.1 A
0.079
0.095
VDS = 15 V, ID = 3.8 A
11.2
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Rg
510
VDS = 15 V, VGS = 0 V, f = 1 MHz
td(off)
pF
39
VDS = 15 V, VGS = 5 V, ID = 3.8 A
VDS = 15 V, VGS = 4.5 V, ID = 3.8 A
5
7.5
4.85
7.3
1.35
nC
1.26
f = 1 MHz
td(on)
tr
66
VDD = 15 V, RL = 5.0 Ω
ID ≅ 3.0 A, VGEN = 4.5 V, Rg = 1 Ω
tf
7.3
10.95
9.0
15
51
77
18
27
7.1
10.65
Ω
ns
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
IS
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
2.3
12
IS = 1.8 A
IF = 2.3 A, dI/dt = 100 A/µs
A
0.8
1.2
V
11.5
17.25
nC
5.2
7.8
7.7
ns
3.8
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 74277
S10-0646-Rev. B, 22-Mar-10
Si1470DH
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
3.0
12
2.5
9
I D - Drain Current (A)
I D - Drain Current (A)
VGS = 5 V thru 3 V
VGS = 2.5 V
6
3
2.0
1.5
TC = 125 °C
1.0
VGS = 2 V
TC = 25 °C
0.5
VGS = 1.5 V
0
0.0
0.5
1.0
1.5
2.0
TC = - 55 °C
0.0
0.0
2.5
0.5
1.5
2.0
2.5
V GS - Gate-to-Source Voltage (V)
V DS - Drain-to-Source Voltage (V)
Transfer Characteristics Curves vs. Temperature
Output Characteristics
800
0.15
0.12
VGS = 2.5 V
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
1.0
0.09
VGS = 4.5 V
0.06
600
Ciss
400
200
0.03
Coss
0
3
6
9
0
12
6
12
18
24
ID - Drain Current (A)
V DS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
30
1.6
5
ID = 3.7 A
VDS = 15 V
VGS = 4.5 V
ID = 3.7 A, 4.1 A
1.4
VDS = 24 V
3
2
(Normalized)
4
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
Crss
0
0
VGS = 2.5 V
ID = 3.1 A
1.2
1.0
0.8
1
0
0
2
4
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 74277
S10-0646-Rev. B, 22-Mar-10
6
0.6
- 50
- 25
0
25
50
75
100
125
150
T J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si1470DH
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
0.16
TJ = 25 °C
TJ = 150 °C
1
R DS(on) - Drain-to-Source On-Resistance (Ω)
I S - Source Current (A)
10
0.1
ID = 3.7 A
0.12
TA = 125 °C
0.08
TA = 25 °C
0.04
0.00
0.01
0
0.2
0.4
0.6
0.8
1.0
0
1.2
1
3
4
5
VGS - Gate-to-Source Voltage (V)
V SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
RDS(on) vs. VGS vs. Temperature
1.5
30
25
1.3
ID = 250 µA
20
1.1
Power (W)
VGS(th) (V)
2
0.9
15
10
0.7
0.5
- 50
5
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
100
600
100
Limited by RDS(on)*
I D - Drain Current (A)
10
10 ms
1
100 ms
1s
10 s
0.1
DC
0.01
0.001
0.1
TA = 25 °C
Single Pulse
1
10
100
V DS - Drain-to-Source Voltage (V)
* V GS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 74277
S10-0646-Rev. B, 22-Mar-10
Si1470DH
Vishay Siliconix
6
3.6
5
3.0
Package Limited
4
Power (W)
I D - Drain Current (A)
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
3
2.4
1.8
2
1.2
1
0.6
0
0.0
0
25
50
75
100
T C - Case Temperature (°C)
Current Derating*
125
150
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74277
S10-0646-Rev. B, 22-Mar-10
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Si1470DH
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 100 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
10-4
10-3
4. Surface Mounted
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74277.
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Document Number: 74277
S10-0646-Rev. B, 22-Mar-10
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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Document Number: 91000
Revision: 18-Jul-08
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