Si1488DH
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
20
ID (A)
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
a
0.049 at VGS = 4.5 V
6.1
0.056 at VGS = 2.5 V
5.7
0.065 at VGS = 1.8 V
5.3
6.0
APPLICATIONS
SOT-363
SC-70 (6-LEADS)
• Load Switch for Portable Devices
D
D
1
6
D
D
5
2
D
AG
XX
YY
Marking Code
Lot Traceability
and Date Code
G
3
4
S
G
Part # Code
Top View
S
Ordering Information: Si1488DH-T1-E3 (Lead (Pb)-free)
Si1488DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
±8
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)a
TC = 70 °C
TA = 25 °C
4.9
ID
4.6b, c
Pulsed Drain Current
IDM
20
IAS
10
Continuous Source-Drain Diode Current
Maximum Power Dissipationa
TC = 25 °C
TA = 25 °C
5
EAS
IS
A
1.3b, c
2.8
TC = 70 °C
1.8
PD
W
1.5b, c
1.0b, c
TA = 70 °C
Operating Junction and Storage Temperature Range
mJ
2.3
TC = 25 °C
TA = 25 °C
A
3.7b, c
Avalanche Current
Repetitive Avalanche Energy
V
6.1
TA = 70 °C
L = 0.1 mH
Unit
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Maximum Junction-to-Ambientb, d
t≤5s
RthJA
60
80
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
34
45
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 125 °C/W.
Document Number: 73788
S10-0792-Rev. D, 05-Apr-10
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1
Si1488DH
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/
ID = 250 µA
Gate-Source Threshold Voltage
VDS Temperature Coefficient
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
a
On-State Drain Current
Drain-Source On-State Resistancea
Forward Transconductance
ID(on)
RDS(on)
gfs
V
20.2
mV/°C
- 2.75
0.95
V
± 100
nA
VDS = 20 V, VGS = 0 V
1
µA
VDS = 20 V, VGS = 0 V, TJ = 85 °C
10
µA
VDS = ≥ 5 V, VGS = 4.5 V
0.45
20
A
VGS = 4.5 V, ID = 4.6 A
0.041
0.049
VGS = 2.5 V, ID = 4.3 A
0.047
0.056
VGS = 1.8 V, ID = 3.9 A
0.054
0.065
VDS = 10 V, ID = 4.6 A
15
Ω
mS
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
530
VDS = 10 V, VGS = 0 V, f = 1 MHz
100
VDS = 10 V, VGS = 5 V, ID = 4.6 A
6.6
10
6
9
VDS = 10 V, VGS = 4.5 V, ID = 4.6 A
1.5
48
tr
Turn-Off DelayTime
td(off)
Fall Time
pC
0.9
f = 1 MHz
td(on)
Rise Time
pF
VDD = 10 V, RL = 2.7 Ω
ID ≅ 3.7 A, VGEN = 4.5 V, Rg = 1 Ω
tf
7.3
11
8.5
13
45
68
35
53
82
123
Ω
ns
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
Pulse Diode Forward
Currenta
Body Diode Voltage
IS
TC = 25 °C
2.3
ISM
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
20
IS = 2.2 A
IF = 3.2 A, dI/dt = 100 A/µs
A
0.8
1.2
V
10.6
16
nC
3.7
5.7
6.2
ns
4.4
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73788
S10-0792-Rev. D, 05-Apr-10
Si1488DH
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
20
5
VGS = 5 V thru 2.5 V
VGS = 2 V
4
I D - Drain Current (A)
I D - Drain Current (A)
15
10
VGS = 1.5 V
3
2
TJ = 25 ° C
5
1
TJ = 125 ° C
VGS = 1 V
0
0.0
0.6
1.2
TJ = - 55 ° C
1.8
2.4
0
0.0
3.0
0.4
VDS - Drain-to-Source Voltage (V)
0.8
1.2
1.6
2.0
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics Curves vs. Temperature
0.09
800
600
0.07
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
0.08
VGS = 1.8 V
0.06
VGS = 2.5 V
0.05
Ciss
400
200
0.04
Coss
VGS = 4.5 V
Crss
0
0.03
0
4
8
12
16
20
0
4
ID - Drain Current (A)
8
12
16
20
VDS - Drain-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
5
1.8
1.6
4
VDS = 10 V
R DS(on) - On-Resistance
(Normalized)
VG S - Gate-to-Source Voltage (V)
ID = 4.6 A
3
VDS = 16 V
2
VGS = 2.5 V, ID = 4.3 A
VGS = 1.8 V, ID = 3.9 A
1.4
1.2
VGS = 4.5 V, ID = 4.6 A
1.0
1
0.8
0
0
2
4
6
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 73788
S10-0792-Rev. D, 05-Apr-10
8
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si1488DH
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
0.12
ID = 4.6 A
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
20
10
1
TJ = 150 °C
TJ = 25 °C
0.1
0.01
0.001
0.0
0.09
0.06
TA = 125 ° C
TA = 25 ° C
0.03
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
1
VSD - Source-to-Drain Voltage (V)
3
4
5
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
RDS(on) vs. VGS vs. Temperature
1.0
30
25
0.8
ID = 250 µA
20
0.6
Power (W)
VG S(th) (V)
2
0.4
15
10
0.2
0.0
- 50
5
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
100
600
100
Limited by R DS(on)*
1 ms
I D - Drain Current (A)
10
10 ms
100 ms
1
1s
10 s
0.1
DC
BVDSS Limited
0.01
TA = 25 ° C
Single Pulse
0.001
0.1
10
1
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 73788
S10-0792-Rev. D, 05-Apr-10
Si1488DH
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
8
3.5
2.8
Power Dissipation (W)
I D - Drain Current (A)
6
Package Limited
4
2.1
1.4
2
0.7
0
0.0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
0
25
50
75
100
125
150
T C - Case Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73788
S10-0792-Rev. D, 05-Apr-10
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5
Si1488DH
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 100 ° C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
10-4
4. Surface Mounted
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73788.
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Document Number: 73788
S10-0792-Rev. D, 05-Apr-10
Legal Disclaimer Notice
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Revision: 01-Jan-2022
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Document Number: 91000