SI1539DDL-T1-GE3

Si1539DDL www.vishay.com Vishay Siliconix N- and P-Channel 30 V (D-S) MOSFET FEATURES SOT-363 SC-70 Dual (6 leads) D1 6 • TrenchFET® power MOSFET S2 4 G2 5 • 100 % Rg tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1 S1 Top View 2 G1 APPLICATIONS 3 D2 • DC/DC converter • Load switch D1 Marking code: RI S2 PRODUCT SUMMARY N-CHANNEL P-CHANNEL 30 -30 VDS (V) RDS(on) (Ω) at VGS = ± 10 V 0.388 1.070 RDS(on) (Ω) at VGS = ± 4.5 V 0.525 2.590 Qg typ. (nC) 0.55 0.8 ID (A) a 0.7 -0.46 Configuration G2 G1 Dual S1 D2 N-Channel MOSFET P-Channel MOSFET ORDERING INFORMATION Package SOT-363 Lead (Pb)-free and halogen-free Si1539DDL-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL N-CHANNEL P-CHANNEL Drain-source voltage VDS 30 -30 Gate-source voltage VGS ± 20 ± 20 Continuous drain current (TJ = 150 °C) Source-drain current diode current TC = 25 °C 0.7 -0.46 TC = 70 °C 0.6 -0.36 ID 0.7 b, c -0.42 b, c 0.5 b, c -0.33 b, c TC = 25 °C 0.3 -0.3 0.2 b, c -0.2 b, c TA = 25 °C Pulsed drain current (t = 100 μs) IS IDM TC = 25 °C TC = 70 °C Maximum power dissipation V TA = 70 °C TA = 25 °C TA = 25 °C PD -1 0.34 0.34 0.22 0.22 0.29 b, c 0.29 b, c 0.18 b, c TA = 70 °C Operating junction and storage temperature range 2 TJ, Tstg UNIT A W 0.18 b, c -55 to +150 °C THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient SYMBOL b, d t ≤ 10 s RthJA N-CHANNEL MAX. TYP. MAX. 365 438 365 438 370 308 370 308 Maximum junction-to-foot (drain) Steady state RthJF Notes a. Based on TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. Maximum under steady state conditions is 486 °C/W (N-Channel) and 486 °C/W (P-Channel) S17-1009-Rev. B, 03-Jul-17 P-CHANNEL TYP. UNIT °C/W Document Number: 62999 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1539DDL www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. a MAX. UNIT Static Drain-source breakdown voltage VDS temperature coefficient VDS ΔVDS/TJ VGS(th) temperature coefficient ΔVGS(th)/TJ Gate-source threshold voltage VGS(th) Gate-body leakage IGSS VGS = 0 V, ID = 250 μA N-Ch 30 - - VGS = 0 V, ID = -250 μA P-Ch -30 - - ID = 250 μA N-Ch - 30 - ID = -250 μA P-Ch - -25 - ID = 250 μA N-Ch - -3.6 - ID = -250 μA P-Ch - 3.1 - VDS = VGS, ID = 250 μA N-Ch 1.2 - 2.5 VDS = VGS, ID = -250 μA P-Ch -1.5 - -3 VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V Zero gate voltage drain current On-state drain current b Drain-source on-state resistance b IDSS ID(on) RDS(on) - ± 100 - - ± 100 N-Ch - - 1 VDS = -30 V, VGS = 0 V P-Ch - - -1 N-Ch - - 10 VDS = -30 V, VGS = 0 V, TJ = 55 °C P-Ch - - -10 VDS = 5 V, VGS = 10 V N-Ch 2 - - VDS = -5 V, VGS = -10 V P-Ch -1 - - VGS = 10 V, ID = 0.6 A N-Ch - 0.323 0.388 VGS = -10 V, ID = -0.4 A P-Ch - 0.890 1.070 VGS = 4.5 V, ID = 0.1A N-Ch - 0.437 0.525 VGS = -5 V, ID = -0.1 A gfs - P-Ch VDS = 30 V, VGS = 0 V, TJ = 55 °C VGS = -4.35 V, ID = -0.1 A Forward transconductance b N-Ch P-Ch - 1.850 2.590 - 2.800 - VDS = 15 V, ID = 0.6 A N-Ch - 1.2 - VDS = -15 V, ID = -0.4 A P-Ch - 0.6 - V mV/°C V nA μA A Ω S Dynamic a Input capacitance Ciss N-Channel VDS = 15 V, VGS = 0 V, f = 1 MHz Output capacitance Coss P-Channel VDS = -15 V, VGS = 0 V, f = 1 MHz Reverse transfer capacitance Total gate charge Gate-source charge Crss Qg Qgd Gate resistance Rg S17-1009-Rev. B, 03-Jul-17 - 28 - P-Ch - 21 - N-Ch - 10 - P-Ch - 10 - N-Ch - 5 - P-Ch - 6 - VDS = 15 V, VGS = 10 V, ID = 0.6 A N-Ch - 1 1.5 VDS = -15 V, VGS = -10 V, ID = -0.4 A P-Ch - 1.5 3 N-Ch - 0.55 1.1 N-Channel VDS = 15 V, VGS = 4.5 V ID = 0.6 A P-Ch - 0.8 1.2 N-Ch - 0.2 - P-Channel VDS = -15 V, VGS = -4.5 V, ID = -0.4 A P-Ch - 0.4 - N-Ch - 0.2 - P-Ch - 0.35 - N-Ch 0.7 3.7 7.4 P-Ch 0.3 15 30 Qgs Gate-drain charge N-Ch f = 1 MHz pF nC Ω Document Number: 62999 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1539DDL www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER Dynamic SYMBOL MIN. TYP. a MAX. N-Ch - 2 4 P-Ch - 4 8 N-Ch - 14 21 P-Ch - 18 30 N-Ch - 11 20 P-Ch - 8 16 N-Ch - 9 18 TEST CONDITIONS UNIT a Turn-on delay time td(on) Rise time Turn-off delay time tr td(off) Fall time Turn-on delay time P-Channel VDD = -15 V, RL = 38 Ω ID ≅ -0.4 A, VGEN = -10 V, Rg = 1 Ω tf td(on) Rise time Turn-off delay time N-Channel VDD = 15 V, RL = 30 Ω ID ≅ 0.5 A, VGEN = 10 V, Rg = 1 Ω tr td(off) Fall Time N-Channel VDD = 15 V, RL = 30 Ω ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 1 Ω P-Channel VDD = -15 V, RL = 50 Ω ID ≅ -0.3 A, VGEN = -4.5 V, Rg = 1 Ω tf P-Ch - 18 30 N-Ch - 26 39 P-Ch - 22 33 N-Ch - 25 38 P-Ch - 28 42 N-Ch - 14 21 P-Ch - 4 8 N-Ch - 15 23 P-Ch - 18 30 N-Ch - - 0.3 ns Drain-Source Body Diode Characteristics Continuous source-drain diode current Pulse diode forward current (t = 100 μs) Body diode voltage IS ISM VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time TC = 25 °C P-Ch - - -0.3 N-Ch - - 2 P-Ch - - -1 IS = 0.5 A N-Ch - 0.8 1.2 IS = -0.4 A P-Ch - -0.8 -1.2 N-Ch - 10 20 P-Ch - 13 20 N-Channel IF = 0.5 A, di/dt = 100 A/μs, TJ = 25 °C N-Ch - 3 6 P-Ch - 8 16 P-Channel IF = -0.5 A, di/dt = -100 A/μs, TJ = 25 °C N-Ch - 6 - tb P-Ch - 7 - N-Ch - 4 - P-Ch - 6 - A V ns nC ns Notes a. Guaranteed by design, not subject to production testing b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-1009-Rev. B, 03-Jul-17 Document Number: 62999 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1539DDL www.vishay.com Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2 0.5 VGS = 10 V thru 5 V VGS = 4 V 0.4 ID - Drain Current (A) ID - Drain Current (A) 1.5 1 0.3 TC = 25 °C 0.2 0.5 0.1 VGS = 3 V TC = 125 °C TC = - 55 °C 0 0 0.5 1 1.5 2 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.80 40 0.60 30 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0 VGS = 4.5 V 0.40 VGS = 10 V 0.20 Ciss 20 Coss 10 Crss 0.00 0 0 0.5 1 1.5 2 0 12 18 24 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 30 1.8 8 RDS(on) - On-Resistance (Normalized) ID = 0.6 A VGS - Gate-to-Source Voltage (V) 6 VDS = 7.5 V 6 VDS = 15 V 4 VDS = 24 V 2 0 0 0.3 0.6 0.9 Qg - Total Gate Charge (nC) Gate Charge S17-1009-Rev. B, 03-Jul-17 1.2 VGS = 10 V ID = 0.6 A 1.5 1.2 0.9 0.6 - 50 VGS = 4.5 V - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 62999 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1539DDL www.vishay.com Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.8 10 1 TJ = 25 °C 0.1 0.0 VGS(th) (V) RDS(on) - On-Resistance (Ω) TJ = 150 °C 0.6 TJ = 25 °C 0.2 0 0.3 0.6 0.9 1.2 1.5 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2 6.4 1.8 4.8 ID = 250 μA 1.6 1.4 1.2 - 50 TJ = 125 °C 0.4 Power (W) IS - Source Current (A) ID = 0.6 A 3.2 1.6 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 10 10 Limited by IDM ID - Drain Current (A) Limited by RDS(on)* BVDSS Limited 1 100 μs 1 ms 0.1 10 ms 100 ms TA = 25 °C Single Pulse 0.01 0.1 1s 10 s, DC 100 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S17-1009-Rev. B, 03-Jul-17 Document Number: 62999 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1539DDL www.vishay.com Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.8 ID - Drain Current (A) 0.6 0.4 0.2 0 0 25 50 75 100 125 150 0 25 TC - Case Temperature (°C) Current Derating a 0.45 0.32 0.36 0.27 Power (W) Power (W) 0.24 0.18 0.16 0.08 0.09 0 0 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating, Junction-to-Foot 150 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S17-1009-Rev. B, 03-Jul-17 Document Number: 62999 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1539DDL www.vishay.com Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 486 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot S17-1009-Rev. B, 03-Jul-17 Document Number: 62999 7 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1539DDL www.vishay.com Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.1 1 VGS = 10V thru 7V VGS = 6 V 0.08 0.5 ID - Drain Current (A) ID - Drain Current (A) 0.75 VGS = 5 V TC = 125 °C 0.06 0.04 TC = 25 °C 0.25 VGS = 4 V 0.02 TC = - 55 °C 0 0 0.5 1 1.5 0 2 0 0.6 VDS - Drain-to-Source Voltage (V) 4.6 36 3.95 30 VGS = 4.35 V 3.3 2.65 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 3.6 Transfer Characteristics Output Characteristics VGS = 4.5 V 2 1.35 24 Ciss 18 12 Coss VGS = 10 V Crss 6 0.7 0.05 0 0 0.1 0.2 0.3 0.4 0.5 ID - Drain Current (A) 0 12 18 24 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 6 30 1.6 10 VDS = 8 V VGS = 10 V,, 0.4 A RDS(on) - On-Resistance (Normalized) ID = 0.4 A VGS - Gate-to-Source Voltage (V) 1.2 1.8 2.4 3 VGS - Gate-to-Source Voltage (V) 8 VDS = 15 V 6 4 VDS = 24 V 2 0 0 0.3 0.6 0.9 1.2 1.4 1.2 VGS = 5 V, 0.1 A 1 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S17-1009-Rev. B, 03-Jul-17 Document Number: 62999 8 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1539DDL www.vishay.com Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 4 10 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 0.4 A TJ = 150 °C 1 TJ = 25 °C 3 2 TJ = 125 °C 1 TJ = 25 °C 0 0.1 0.0 0.4 0.8 1.2 1.6 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 6.4 2.55 ID = 250 μA 4.8 Power (W) VGS(th) (V) 2.35 2.15 1.6 1.95 1.75 - 50 3.2 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 10 10 Limited by IDM ID - Drain Current (A) 1 100 μs 1 ms Limited by RDS(on)* 0.1 10 ms 100 ms 1s DC,10 s 0.01 TA = 25 °C BVDSS Limited 0.001 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S17-1009-Rev. B, 03-Jul-17 Document Number: 62999 9 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1539DDL www.vishay.com Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.55 ID - Drain Current (A) 0.44 0.33 0.22 0.11 0 0 25 50 75 100 125 150 0 25 TC - Case Temperature (°C) Current Derating a 0.32 0.45 0.36 0.27 Power (W) Power (W) 0.24 0.18 0.16 0.08 0.09 0.00 0 0 25 50 75 100 125 150 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S17-1009-Rev. B, 03-Jul-17 Document Number: 62999 10 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1539DDL www.vishay.com Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 486 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62999. S17-1009-Rev. B, 03-Jul-17 Document Number: 62999 11 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SCĆ70: 6ĆLEADS MILLIMETERS 6 5 Dim A A1 A2 b c D E E1 e e1 L 4 E1 E 1 2 3 -B- e b e1 D -Ac A2 A L A1 Document Number: 71154 06-Jul-01 INCHES Min Nom Max Min Nom Max 0.90 – 1.10 0.035 – 0.043 – – 0.10 – – 0.004 0.80 – 1.00 0.031 – 0.039 0.15 – 0.30 0.006 – 0.012 0.10 – 0.25 0.004 – 0.010 1.80 2.00 2.20 0.071 0.079 0.087 1.80 2.10 2.40 0.071 0.083 0.094 1.15 1.25 1.35 0.045 0.049 0.053 0.65BSC 0.026BSC 1.20 1.30 1.40 0.047 0.051 0.055 0.10 0.20 0.30 0.004 0.008 0.012 7_Nom 7_Nom ECN: S-03946—Rev. B, 09-Jul-01 DWG: 5550 www.vishay.com 1 AN814 Vishay Siliconix Dual-Channel LITTLE FOOTR SC-70 6-Pin MOSFET Recommended Pad Pattern and Thermal Performance INTRODUCTION This technical note discusses the pin-outs, package outlines, pad patterns, evaluation board layout, and thermal performance for dual-channel LITTLE FOOT power MOSFETs in the SC-70 package. These new Vishay Siliconix devices are intended for small-signal applications where a miniaturized package is needed and low levels of current (around 250 mA) need to be switched, either directly or by using a level shift configuration. Vishay provides these devices with a range of on-resistance specifications in 6-pin versions. The new 6-pin SC-70 package enables improved on-resistance values and enhanced thermal performance. PIN-OUT Figure 1 shows the pin-out description and Pin 1 identification for the dual-channel SC-70 device in the 6-pin configuration. SOT-363 SC-70 (6-LEADS) S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 applications for which this package is intended. For the 6-pin device, increasing the pad patterns yields a reduction in thermal resistance on the order of 20% when using a 1-inch square with full copper on both sides of the printed circuit board (PCB). EVALUATION BOARDS FOR THE DUAL SC70-6 The 6-pin SC-70 evaluation board (EVB) measures 0.6 inches by 0.5 inches. The copper pad traces are the same as described in the previous section, Basic Pad Patterns. The board allows interrogation from the outer pins to 6-pin DIP connections permitting test sockets to be used in evaluation testing. The thermal performance of the dual SC-70 has been measured on the EVB with the results shown below. The minimum recommended footprint on the evaluation board was compared with the industry standard 1-inch square FR4 PCB with copper on both sides of the board. THERMAL PERFORMANCE Top View FIGURE 1. For package dimensions see outline drawing SC-70 (6-Leads) (http://www.vishay.com/doc?71154) Junction-to-Foot Thermal Resistance (the Package Performance) Thermal performance for the dual SC-70 6-pin package measured as junction-to-foot thermal resistance is 300_C/W typical, 350_C/W maximum. The “foot” is the drain lead of the device as it connects with the body. Note that these numbers are somewhat higher than other LITTLE FOOT devices due to the limited thermal performance of the Alloy 42 lead-frame compared with a standard copper lead-frame. Junction-to-Ambient Thermal Resistance (dependent on PCB size) BASIC PAD PATTERNS See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/doc?72286) for the 6-pin SC-70. This basic pad pattern is sufficient for the low-power Document Number: 71237 12-Dec-03 The typical RθJA for the dual 6-pin SC-70 is 400_C/W steady state. Maximum ratings are 460_C/W for the dual. All figures based on the 1-inch square FR4 test board. The following example shows how the thermal resistance impacts power dissipation for the dual 6-pin SC-70 package at two different ambient temperatures. www.vishay.com 1 AN814 Vishay Siliconix SC-70 (6-PIN) PD + Dual EVB Elevated Ambient 60 _C TJ(max) * TA Rq JA o o PD + 150 Co* 25 C 400 CńW PD + 312 mW PD + TJ(max) * TA Rq JA o o PD + 150 Co* 60 C 400 CńW PD + 225 mW NOTE: Although they are intended for low-power applications, devices in the 6-pin SC-70 will handle power dissipation in excess of 0.2 W. 400 Thermal Resistance (C/W) Room Ambient 25 _C 500 300 200 100 1” Square FR4 PCB 0 10-5 10-4 Testing LITTLE FOOT SC-70 (6-PIN) 1) Minimum recommended pad pattern (see Figure 2) on the EVB of 0.5 inches x 0.6 inches. 518_C/W 2) Industry standard 1” square PCB with maximum copper both sides. 413_C/W 2 10-2 10-1 1 10 100 1000 Time (Secs) To aid comparison further, Figure 2 illustrates the dual-channel SC-70 thermal performance on two different board sizes and two different pad patterns. The results display the thermal performance out to steady state. The measured steady state values of RθJA for the dual 6-pin SC-70 are as follows: www.vishay.com 10-3 FIGURE 2. Comparison of Dual SC70-6 on EVB and 1” Square FR4 PCB. The results show that if the board area can be increased and maximum copper traces are added, the thermal resistance reduction is limited to 20%. This fact confirms that the power dissipation is restricted with the package size and the Alloy 42 leadframe. ASSOCIATED DOCUMENT Single-Channel LITTLE FOOT SC-70 6-Pin MOSFET Copper Leadframe Version, REcommended Pad Pattern and Thermal Performance, AN815, (http://www.vishay.com/doc?71334). Document Number: 71237 12-Dec-03 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead 0.067 0.026 (0.648) 0.045 (1.143) 0.096 (2.438) (1.702) 0.016 0.026 0.010 (0.406) (0.648) (0.241) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 18 Document Number: 72602 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000