SI1563DH-T1-E3

Si1563DH Vishay Siliconix Complementary 20 V (D-S) Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.00 0.490 at VGS = - 4.5 V - 1.00 0.750 at VGS = - 2.5 V - 0.81 1.10 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs: 1.8 V Rated • Thermally Enhanced SC-70 Package • Fast Switching • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Devices SOT-363 SC-70 (6-LEADS) D1 1 6 D1 G1 2 5 G2 EB D2 3 4 S2 Marking Code S2 XX YY S1 Lot Traceability and Date Code G2 Part # Code G1 Top View Ordering Information: Si1563DH-T1-E3 (Lead (Pb)-free) Si1563DH-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 D2 N-Channel P-Channel ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted N-Channel Parameter Symbol 5s P-Channel Steady State 5s Steady State Drain-Source Voltage VDS 20 - 20 Gate-Source Voltage VGS ±8 ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C Pulsed Drain Current IS TA = 25 °C TA = 85 °C Operating Junction and Storage Temperature Range PD V 1.28 1.13 - 1.00 - 0.88 0.92 0.81 - 0.72 - 0.63 IDM Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa ID 4.0 - 3.0 0.61 0.48 - 0.61 - 0.48 0.74 0.57 0.30 0.57 0.38 0.30 0.16 0.3 TJ, Tstg Unit - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t≤5s Steady State Steady State RthJA RthJF Typical Maximum 130 170 170 220 80 100 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. Document Number: 71963 S10-1054-Rev. B, 03-May-10 www.vishay.com 1 Si1563DH Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage Gate-Body Leakage VGS(th) VDS = VGS, ID = 100 µA N-Ch 0.45 1 VDS = VGS, ID = - 100 µA P-Ch - 0.45 1 N-Ch ± 100 P-Ch ± 100 N-Ch 1 VDS = - 16 V, VGS = 0 V P-Ch -1 VDS = 16 V, VGS = 0 V, TJ = 85 °C N-Ch 5 VDS = 0 V, VGS = ± 8 V IGSS VDS = 16 V, VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea IDSS VDS = - 16 V, VGS = 0 V, TJ = 85 °C P-Ch VDS ≥ 5 V, VGS = 4.5 V N-Ch 2 VDS ≤ - 5 V, VGS = - 4.5 V P-Ch -2 ID(on) RDS(on) gfs VSD V nA µA -5 A VGS = 4.5 V, ID = 1.13 A N-Ch 0.220 0.280 VGS = - 4.5 V, ID = - 0.88 A P-Ch 0.400 0.490 VGS = 2.5 V, ID = 0.99 A N-Ch 0.281 0.360 VGS = - 2.5 V, ID = - 0.71 A P-Ch 0.610 0.750 VGS = 1.8 V, ID = 0.20 A N-Ch 0.344 0.450 VGS = - 1.8 V, ID = - 0.20 A P-Ch 0.850 1.10 VDS = 10 V, ID = 1.13 A N-Ch 2.6 VDS = - 10 V, ID = - 0.88 A P-Ch 1.5 IS = 0.48 A, VGS = 0 V N-Ch 0.8 1.2 IS = - 0.48 A, VGS = 0 V P-Ch - 0.8 - 1.2 N-Ch 1.25 2 1.8 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Reverse Recovery Time trr N-Channel VDS = 10 V, VGS = 4.5 V, ID = 1.13 A P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 0.88 A N-Channel VDD = 10 V, RL = 20 Ω ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω P-Channel VDD = - 10 V, RL = 20 Ω ID ≅ - 0.5 A, VGEN = - 4.5 V, Rg = 6 Ω IF = 0.48 A, dI/dt = 100 A/µs P-Ch 1.2 N-Ch 0.21 P-Ch 0.3 N-Ch 0.3 P-Ch 0.21 nC N-Ch 15 25 P-Ch 18 30 N-Ch 22 35 P-Ch 25 40 N-Ch 25 40 P-Ch 15 25 N-Ch 12 20 P-Ch 12 20 N-Ch 30 60 P-Ch 30 60 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71963 S10-1054-Rev. B, 03-May-10 Si1563DH Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.0 2.0 VGS = 5 V thru 2 V TC = - 55 °C I D - Drain Current (A) I D - Drain Current (A) 25 °C 1.5 1.5 V 1.0 0.5 1.5 125 °C 1.0 0.5 1V 0.0 0 1 2 3 0.0 0.0 4 0.5 VDS - Drain-to-Source Voltage (V) 1.0 1.5 2.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.6 160 120 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.5 0.4 VGS = 1.8 V VGS = 2.5 V 0.3 VGS = 4.5 V 0.2 Ciss 80 40 Coss 0.1 Crss 0.0 0.0 0 0.5 1.0 1.5 2.0 0 4 ID - Drain Current (A) 8 20 Capacitance 5 1.6 VDS = 10 V ID = 1.28 A VGS = 4.5 V ID = 1.13 A 4 1.4 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 16 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 3 2 1 0 0.0 12 1.2 1.0 0.8 0.3 0.6 0.9 Qg - Total Gate Charge (nC) Gate Charge Document Number: 71963 S10-1054-Rev. B, 03-May-10 1.2 1.5 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si1563DH Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 2 TJ = 150 °C R DS(on) - On-Resistance (Ω) 0.5 I S - Source Current (A) 1 TJ = 25 °C 0.4 ID = 1.13 A 0.3 0.2 0.1 0.0 0.1 0 0.4 0.2 0.6 0.8 1.0 0 1.2 1 3 4 5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.2 5 ID = 100 µA 0.1 4 0.0 3 Power (W) VGS(th) Variance (V) 2 - 0.1 2 - 0.2 1 - 0.3 - 0.4 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 1 10 100 600 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 10 IDM Limited P(t) = 0.0001 I D - Drain Current (A) Limited by RDS(on)* 1 P(t) = 0.001 ID(on) Limited P(t) = 0.01 0.1 P(t) = 0.1 TA = 25 °C Single Pulse P(t) = 1 P(t) = 10, DC BVDSS Limited 0.01 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 71963 S10-1054-Rev. B, 03-May-10 Si1563DH Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 170 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 4. Surface Mounted 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 71963 S10-1054-Rev. B, 03-May-10 www.vishay.com 5 Si1563DH Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3.0 3.0 3V VGS = 5 V 2.5 I D - Drain Current (A) I D - Drain Current (A) TC = - 55 °C thru 3.5 V 2.5 2.5 V 2.0 1.5 2V 1.0 1.5 V 0.5 25 °C 2.0 125 °C 1.5 1.0 0.5 1V 0.0 0.0 0.0 0 1 2 3 4 0.5 1.0 1.5 2.5 3.0 3.5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 160 1.6 VGS = 1.8 V Ciss 120 1.2 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 2.0 VGS = 2.5 V 0.8 VGS = 4.5 V 80 Coss 40 0.4 Crss 0.0 0.0 0 0.5 1.0 1.5 2.0 2.5 0 3.0 8 10 VDS - Drain-to-Source Voltage (V) Capacitance 12 1.6 VGS = 4.5 V ID = 0.88 A 1.4 3 2 (Normalized) 4 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 6 ID - Drain Current (A) VDS = 10 V ID = 0.9 A 1.2 1.0 0.8 1 www.vishay.com 6 4 On-Resistance vs. Drain Current 5 0 0.0 2 0.3 0.6 0.9 1.2 1.5 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 Document Number: 71963 S10-1054-Rev. B, 03-May-10 Si1563DH Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.6 2 I S - Source Current (A) ID = 0.88 A R DS(on) - On-Resistance (Ω) TJ = 150 °C 1 TJ = 25 °C 1.2 0.8 0.4 0.0 0.1 0 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.30 5 0.25 ID = 100 µA 4 0.15 3 Power (W) V GS(th) Variance (V) 0.20 0.10 0.05 2 0.00 - 0.05 1 - 0.10 - 0.15 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 1 10 100 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 600 10 IDM Limited I D - Drain Current (A) P(t) = 0.0001 Limited by RDS(on)* 1 P(t) = 0.001 ID(on) Limited P(t) = 0.01 0.1 P(t) = 0.1 TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 P(t) = 1 P(t) = 10 DC 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 71963 S10-1054-Rev. B, 03-May-10 www.vishay.com 7 Si1563DH Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 170 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 t1 t2 4. Surface Mounted 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. 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