Si1563EDH
Vishay Siliconix
Complementary 20 V (D-S) Low-Threshold MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
N-Channel
P-Channel
20
- 20
RDS(on) ()
ID (A)
0.280 at VGS = 4.5 V
1.28
0.360 at VGS = 2.5 V
1.13
0.450 at VGS = 1.8 V
1
0.490 at VGS = - 4.5 V
-1
0.750 at VGS = - 2.5 V
- 0.81
1.10 at VGS = - 1.8 V
- 0.67
TrenchFET® Power MOSFETS: 1.8 V Rated
ESD Protected: 2000 V
Thermally Enhanced SC-70 Package
Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
•
•
•
•
APPLICATIONS
• Load Switching
• PA Switch
• Level Switch
D1
SOT-363
SC-70 (6-LEADS)
1
6
D1
Marking Code
EA
G1
D2
5
2
3
4
XX
1k
G1
YY
S1
G2
S2
Lot Traceability
and Date Code
G2
3k
Part # Code
S2
N-Channel
Top View
P-Channel
S1
D2
Ordering Information: Si1563EDH-T1-E3 (Lead (Pb)-free)
Si1563EDH-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
N-Channel
Parameter
Symbol
5s
P-Channel
Steady State
5s
Steady State
Drain-Source Voltage
VDS
20
- 20
Gate-Source Voltage
VGS
± 12
± 12
Continuous Drain Current (TJ = 150 °C)
TA = 25 °C
TA = 85 °C
Pulsed Drain Current
ID
1.28
0.92
IS
TA = 25 °C
Maximum Power Dissipationa
TA = 85 °C
Operating Junction and Storage Temperature Range
PD
-1
0.81
- 0.72
- 0.63
A
-3
0.61
0.48
0.74
0.38
TJ, Tstg
V
- 0.88
4
IDM
Continuous Source Current (Diode Conduction)a
1.13
Unit
- 0.61
- 0.48
0.57
0.30
0.57
0.30
0.16
0.3
W
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
t5s
Maximum Junction-to-Ambienta
Steady State
Maximum Junction-to-Foot (Drain)
Steady State
RthJA
RthJF
Typical
Maximum
130
170
170
220
80
100
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
Document Number: 71416
S12-1258-Rev. E, 21-May-12
For more information please contact: pmostechsupport@vishay.com
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si1563EDH
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 100 µA
N-Ch
0.45
1
VDS = VGS, ID = - 100 µA
P-Ch
- 0.45
-1
VDS = 0 V, VGS = ± 4.5 V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
VDS = 16 V, VGS = 0 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
IDSS
ID(on)
RDS(on)
gfs
VSD
N-Ch
±1
P-Ch
±1
N-Ch
± 10
P-Ch
± 10
N-Ch
1
VDS = - 16 V, VGS = 0 V
P-Ch
-1
VDS = 16 V, VGS = 0 V, TJ = 85 °C
N-Ch
5
VDS = - 16 V, VGS = 0 V, TJ = 85 °C
P-Ch
-5
VDS 5 V, VGS = 4.5 V
N-Ch
2
VDS - 5 V, VGS = - 4.5 V
P-Ch
-2
V
µA
mA
µA
A
VGS = 4.5 V, ID = 1.13 A
N-Ch
0.220
0.280
VGS = - 4.5 V, ID = - 0.88 A
P-Ch
0.400
0.490
VGS = 2.5 V, ID = 0.99 A
N-Ch
0.281
0.360
VGS = - 2.5 V, ID = - 0.71 A
P-Ch
0.610
0.750
VGS = 1.8 V, ID = 0.20 A
N-Ch
0.344
0.450
VGS = - 1.8 V, ID = - 0.20 A
P-Ch
0.850
1.10
VDS = 10 V, ID = 1.13 A
N-Ch
2.6
VDS = - 10 V, ID = - 0.88 A
P-Ch
1.5
IS = 0.48 V, VGS = 0 V
N-Ch
0.8
1.2
IS = - 0.48 V, VGS = 0 V
P-Ch
- 0.8
- 1.2
N-Ch
0.65
1
P-Ch
1.2
1.8
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qgd
N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 1.13 A
P-Channel
VDS = - 10 V, VGS = - 4.5 V, ID = - 0.88 A
td(on)
tr
td(off)
tf
N-Channel
VDD = 10 V, RL = 20
ID 0.5 A, VGEN = 4.5 V, Rg = 6
P-Channel
VDD = - 10 V, RL = 20
ID - 0.5 A, VGEN = - 4.5 V, Rg = 6
N-Ch
0.2
P-Ch
0.3
N-Ch
0.23
P-Ch
0.3
N-Ch
45
70
nC
P-Ch
150
230
N-Ch
85
130
P-Ch
480
720
N-Ch
350
530
P-Ch
840
1200
N-Ch
210
320
P-Ch
850
1200
ns
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 71416
S12-1258-Rev. E, 21-May-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si1563EDH
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
10 000
I GSS - Gate Current (µA)
I GSS - Gate Current (mA)
1000
8
6
4
100
10
TJ = 150 °C
1
TJ = 25 °C
0.1
2
0.01
0
0.001
0
4
8
12
16
0
3
VGS - Gate-to-Source Voltage (V)
9
6
12
15
VGS - Gate-to-Source Voltage (V)
Gate-Current vs. Gate-Source Voltage
Gate-Current vs. Gate-Source Voltage
2.0
2.0
VGS = 5 V thru 2 V
TC = - 55 °C
25 °C
I D - Drain Current (A)
I D - Drain Current (A)
1.5
1.5 V
1.0
0.5
1.5
125 °C
1.0
0.5
1V
0.0
0
1
2
3
0.0
0.0
4
0.5
VDS - Drain-to-Source Voltage (V)
2.0
Transfer Characteristics
0.6
140
120
C - Capacitance (pF)
0.5
RDS(on) - On-Resistance (Ω)
1.5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
0.4
1.0
VGS = 1.8 V
VGS = 2.5 V
0.3
VGS = 4.5 V
0.2
100
Ciss
80
60
40
Coss
0.1
0.0
0.0
Crss
20
0
0.5
1.0
1.5
2.0
0
4
8
12
16
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
Document Number: 71416
S12-1258-Rev. E, 21-May-12
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si1563EDH
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1.6
VDS = 10 V
ID = 1.28 A
VGS = 4.5 V
ID = 1.13 A
1.4
3
2
(Normalized)
4
RDS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
5
1.2
1.0
0.8
1
0
0.0
0.3
0.6
0.9
1.2
0.6
- 50
1.5
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Qg - Total Gate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
0.6
2
TJ = 150 °C
R DS(on) - On-Resistance (Ω)
0.5
I S - Source Current (A)
1
TJ = 25 °C
0.4
ID = 1.13 A
0.3
0.2
0.1
0.0
0.1
0
0.2
0.4
0.6
0.8
1.0
0
1.2
1
VSD - Source-to-Drain Voltage (V)
3
4
5
V GS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.2
5
ID = 100 µA
0.1
4
0.0
Power (W)
VGS(th) Variance (V)
2
- 0.1
3
2
- 0.2
1
- 0.3
- 0.4
- 50
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- 25
0
25
50
75
100
125
150
0
0.01
0.1
1
10
100
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
For more information please contact: pmostechsupport@vishay.com
600
Document Number: 71416
S12-1258-Rev. E, 21-May-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si1563EDH
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
2. Per Unit Base = RthJA = 170 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
10-4
t1
t2
4. Surface Mounted
10-3
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Document Number: 71416
S12-1258-Rev. E, 21-May-12
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si1563EDH
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10 000
8
6
I GSS - Gate Current (µA)
I GSS - Gate Current (mA)
1000
4
2
100
TJ = 150 °C
10
1
0.1
TJ = 25 °C
0.01
0.001
0
0
4
8
12
VGS - Gate-to-Source Voltage (V)
0
16
2.5
TC = - 55 °C
2.5
I D - Drain Current (A)
I D - Drain Current (A)
15
3.0
3V
2.5 V
1.5
2V
1.0
1.5 V
0.5
12
Gate-Current vs. Gate-Source Voltage
3.0
2.0
9
6
VGS - Gate-to-Source Voltage (V)
Gate-Current vs. Gate-Source Voltage
VGS = 5 V thru 3.5 V
3
25 °C
2.0
125 °C
1.5
1.0
0.5
1V
0.0
0
1
2
3
0.0
0.0
4
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
3.5
160
1.6
Ciss
120
1.2
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
VGS = 1.8 V
VGS = 2.5 V
0.8
VGS = 4.5 V
80
40
0.4
Coss
Crss
0.0
0.0
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0
0.5
1.0
1.5
2.0
2.5
3.0
0
4
8
12
16
I D - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
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Document Number: 71416
S12-1258-Rev. E, 21-May-12
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si1563EDH
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1.6
VDS = 10 V
ID = 1 A
VGS = 4.5 V
ID = 0.88 A
1.4
4
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
5
3
2
1.2
1.0
0.8
1
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.6
- 50
1.4
- 25
0
Qg - Total Gate Charge (nC)
Gate Charge
50
75
100
125
150
On-Resistance vs. Junction Temperature
1.6
R DS(on) - On-Resistance (Ω)
2
TJ = 150 °C
I S - Source Current (A)
1
TJ = 25 °C
1.2
ID = 0.88 A
0.8
0.4
0.0
0.1
0
0.4
0.2
0.6
0.8
1.0
0
1.2
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.30
5
0.25
ID = 100 µA
4
0.20
0.15
Power (W)
VGS(th) Variance (V)
25
TJ - Junction Temperature (°C)
0.10
0.05
3
2
0.00
- 0.05
1
- 0.10
- 0.15
- 50
- 25
0
25
50
75
100
125
150
0
0.01
0.1
TJ - Temperature (°C)
Threshold Voltage
Document Number: 71416
S12-1258-Rev. E, 21-May-12
1
10
100
600
Time (s)
Single Pulse Power, Junction-to-Ambient
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Si1563EDH
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 170 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
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Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71416.
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Document Number: 71416
S12-1258-Rev. E, 21-May-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
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Document Number: 91000