SI1563EDH-T1-GE3

Si1563EDH Vishay Siliconix Complementary 20 V (D-S) Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1 0.490 at VGS = - 4.5 V -1 0.750 at VGS = - 2.5 V - 0.81 1.10 at VGS = - 1.8 V - 0.67 TrenchFET® Power MOSFETS: 1.8 V Rated ESD Protected: 2000 V Thermally Enhanced SC-70 Package Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 • • • • APPLICATIONS • Load Switching • PA Switch • Level Switch D1 SOT-363 SC-70 (6-LEADS) 1 6 D1 Marking Code EA G1 D2 5 2 3 4 XX 1k G1 YY S1 G2 S2 Lot Traceability and Date Code G2 3k Part # Code S2 N-Channel Top View P-Channel S1 D2 Ordering Information: Si1563EDH-T1-E3 (Lead (Pb)-free) Si1563EDH-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) N-Channel Parameter Symbol 5s P-Channel Steady State 5s Steady State Drain-Source Voltage VDS 20 - 20 Gate-Source Voltage VGS ± 12 ± 12 Continuous Drain Current (TJ = 150 °C) TA = 25 °C TA = 85 °C Pulsed Drain Current ID 1.28 0.92 IS TA = 25 °C Maximum Power Dissipationa TA = 85 °C Operating Junction and Storage Temperature Range PD -1 0.81 - 0.72 - 0.63 A -3 0.61 0.48 0.74 0.38 TJ, Tstg V - 0.88 4 IDM Continuous Source Current (Diode Conduction)a 1.13 Unit - 0.61 - 0.48 0.57 0.30 0.57 0.30 0.16 0.3 W - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol t5s Maximum Junction-to-Ambienta Steady State Maximum Junction-to-Foot (Drain) Steady State RthJA RthJF Typical Maximum 130 170 170 220 80 100 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. Document Number: 71416 S12-1258-Rev. E, 21-May-12 For more information please contact: pmostechsupport@vishay.com www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1563EDH Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 100 µA N-Ch 0.45 1 VDS = VGS, ID = - 100 µA P-Ch - 0.45 -1 VDS = 0 V, VGS = ± 4.5 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V VDS = 16 V, VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea IDSS ID(on) RDS(on) gfs VSD N-Ch ±1 P-Ch ±1 N-Ch ± 10 P-Ch ± 10 N-Ch 1 VDS = - 16 V, VGS = 0 V P-Ch -1 VDS = 16 V, VGS = 0 V, TJ = 85 °C N-Ch 5 VDS = - 16 V, VGS = 0 V, TJ = 85 °C P-Ch -5 VDS  5 V, VGS = 4.5 V N-Ch 2 VDS - 5 V, VGS = - 4.5 V P-Ch -2 V µA mA µA A VGS = 4.5 V, ID = 1.13 A N-Ch 0.220 0.280 VGS = - 4.5 V, ID = - 0.88 A P-Ch 0.400 0.490 VGS = 2.5 V, ID = 0.99 A N-Ch 0.281 0.360 VGS = - 2.5 V, ID = - 0.71 A P-Ch 0.610 0.750 VGS = 1.8 V, ID = 0.20 A N-Ch 0.344 0.450 VGS = - 1.8 V, ID = - 0.20 A P-Ch 0.850 1.10 VDS = 10 V, ID = 1.13 A N-Ch 2.6 VDS = - 10 V, ID = - 0.88 A P-Ch 1.5 IS = 0.48 V, VGS = 0 V N-Ch 0.8 1.2 IS = - 0.48 V, VGS = 0 V P-Ch - 0.8 - 1.2 N-Ch 0.65 1 P-Ch 1.2 1.8  S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qgd N-Channel VDS = 10 V, VGS = 4.5 V, ID = 1.13 A P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 0.88 A td(on) tr td(off) tf N-Channel VDD = 10 V, RL = 20  ID  0.5 A, VGEN = 4.5 V, Rg = 6  P-Channel VDD = - 10 V, RL = 20  ID  - 0.5 A, VGEN = - 4.5 V, Rg = 6  N-Ch 0.2 P-Ch 0.3 N-Ch 0.23 P-Ch 0.3 N-Ch 45 70 nC P-Ch 150 230 N-Ch 85 130 P-Ch 480 720 N-Ch 350 530 P-Ch 840 1200 N-Ch 210 320 P-Ch 850 1200 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For more information please contact: pmostechsupport@vishay.com Document Number: 71416 S12-1258-Rev. E, 21-May-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1563EDH Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 10 000 I GSS - Gate Current (µA) I GSS - Gate Current (mA) 1000 8 6 4 100 10 TJ = 150 °C 1 TJ = 25 °C 0.1 2 0.01 0 0.001 0 4 8 12 16 0 3 VGS - Gate-to-Source Voltage (V) 9 6 12 15 VGS - Gate-to-Source Voltage (V) Gate-Current vs. Gate-Source Voltage Gate-Current vs. Gate-Source Voltage 2.0 2.0 VGS = 5 V thru 2 V TC = - 55 °C 25 °C I D - Drain Current (A) I D - Drain Current (A) 1.5 1.5 V 1.0 0.5 1.5 125 °C 1.0 0.5 1V 0.0 0 1 2 3 0.0 0.0 4 0.5 VDS - Drain-to-Source Voltage (V) 2.0 Transfer Characteristics 0.6 140 120 C - Capacitance (pF) 0.5 RDS(on) - On-Resistance (Ω) 1.5 VGS - Gate-to-Source Voltage (V) Output Characteristics 0.4 1.0 VGS = 1.8 V VGS = 2.5 V 0.3 VGS = 4.5 V 0.2 100 Ciss 80 60 40 Coss 0.1 0.0 0.0 Crss 20 0 0.5 1.0 1.5 2.0 0 4 8 12 16 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance Document Number: 71416 S12-1258-Rev. E, 21-May-12 For more information please contact: pmostechsupport@vishay.com 20 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1563EDH Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.6 VDS = 10 V ID = 1.28 A VGS = 4.5 V ID = 1.13 A 1.4 3 2 (Normalized) 4 RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 5 1.2 1.0 0.8 1 0 0.0 0.3 0.6 0.9 1.2 0.6 - 50 1.5 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) Gate Charge On-Resistance vs. Junction Temperature 0.6 2 TJ = 150 °C R DS(on) - On-Resistance (Ω) 0.5 I S - Source Current (A) 1 TJ = 25 °C 0.4 ID = 1.13 A 0.3 0.2 0.1 0.0 0.1 0 0.2 0.4 0.6 0.8 1.0 0 1.2 1 VSD - Source-to-Drain Voltage (V) 3 4 5 V GS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.2 5 ID = 100 µA 0.1 4 0.0 Power (W) VGS(th) Variance (V) 2 - 0.1 3 2 - 0.2 1 - 0.3 - 0.4 - 50 www.vishay.com 4 - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 10 100 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient For more information please contact: pmostechsupport@vishay.com 600 Document Number: 71416 S12-1258-Rev. E, 21-May-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1563EDH Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 2. Per Unit Base = RthJA = 170 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 t1 t2 4. Surface Mounted 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 71416 S12-1258-Rev. E, 21-May-12 For more information please contact: pmostechsupport@vishay.com www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1563EDH Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 000 8 6 I GSS - Gate Current (µA) I GSS - Gate Current (mA) 1000 4 2 100 TJ = 150 °C 10 1 0.1 TJ = 25 °C 0.01 0.001 0 0 4 8 12 VGS - Gate-to-Source Voltage (V) 0 16 2.5 TC = - 55 °C 2.5 I D - Drain Current (A) I D - Drain Current (A) 15 3.0 3V 2.5 V 1.5 2V 1.0 1.5 V 0.5 12 Gate-Current vs. Gate-Source Voltage 3.0 2.0 9 6 VGS - Gate-to-Source Voltage (V) Gate-Current vs. Gate-Source Voltage VGS = 5 V thru 3.5 V 3 25 °C 2.0 125 °C 1.5 1.0 0.5 1V 0.0 0 1 2 3 0.0 0.0 4 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3.5 160 1.6 Ciss 120 1.2 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) VGS = 1.8 V VGS = 2.5 V 0.8 VGS = 4.5 V 80 40 0.4 Coss Crss 0.0 0.0 www.vishay.com 6 0 0.5 1.0 1.5 2.0 2.5 3.0 0 4 8 12 16 I D - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance For more information please contact: pmostechsupport@vishay.com 20 Document Number: 71416 S12-1258-Rev. E, 21-May-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1563EDH Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.6 VDS = 10 V ID = 1 A VGS = 4.5 V ID = 0.88 A 1.4 4 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 5 3 2 1.2 1.0 0.8 1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.6 - 50 1.4 - 25 0 Qg - Total Gate Charge (nC) Gate Charge 50 75 100 125 150 On-Resistance vs. Junction Temperature 1.6 R DS(on) - On-Resistance (Ω) 2 TJ = 150 °C I S - Source Current (A) 1 TJ = 25 °C 1.2 ID = 0.88 A 0.8 0.4 0.0 0.1 0 0.4 0.2 0.6 0.8 1.0 0 1.2 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.30 5 0.25 ID = 100 µA 4 0.20 0.15 Power (W) VGS(th) Variance (V) 25 TJ - Junction Temperature (°C) 0.10 0.05 3 2 0.00 - 0.05 1 - 0.10 - 0.15 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.1 TJ - Temperature (°C) Threshold Voltage Document Number: 71416 S12-1258-Rev. E, 21-May-12 1 10 100 600 Time (s) Single Pulse Power, Junction-to-Ambient For more information please contact: pmostechsupport@vishay.com www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1563EDH Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 170 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71416. www.vishay.com 8 For more information please contact: pmostechsupport@vishay.com Document Number: 71416 S12-1258-Rev. E, 21-May-12 This document is subject to change without notice. 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