Si1867DL
Vishay Siliconix
Load Switch with Level-Shift
FEATURES
PRODUCT SUMMARY
VDS2 (V)
1.8 to 8
RDS(on) (Ω)
ID (A)
0.600 at VIN = 4.5 V
± 0.6
0.850 at VIN = 2.5 V
± 0.5
1.200 at VIN = 1.8 V
± 0.2
DESCRIPTION
The Si1867DL includes a p- and n-channel MOSFET in a
single SC70-6 package. The low on-resistance p-channel
TrenchFET is tailored for use as a load switch. The
n-Channel, with an external resistor, can be used as a levelshift to drive the P-Channel load-switch. The n-channel
MOSFET has internal ESD protection and can be driven by
logic signals as low as 1.5 V. The Si1867DL operates on
supply lines from 1.8 V to 8 V, and can drive loads up to 0.6 A.
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 600 mΩ Low RDS(on)
• 1.8 V to 8 V Input
• 1.5 V to 8 V Logic Level Control
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch with Level-Shift for Portable Applications
APPLICATION CIRCUITS
12
10
2, 3
4
IL = 1 A
VON/OFF = 3 V
Ci = 10 µF
Co = 1 µF
VOUT
VIN
Q2
tr
tf
8
C1
6
Time (µs)
R1
6
6
4
5
ON/OFF
Co
td(off)
LOAD
Q1
2
td(on)
0
Ci
1
0
4
6
8
10
R2 (kΩ)
R2
GND
R2
2
Si1867DL
Note: For R2 switching variations with other VIN/R1
combinations see Typical Characteristics
Switching Variation
R2 at VIN = 2.5 V, R1 = 20 kΩ
COMPONENTS
R1
Pull-Up Resistor
Typical 10 kΩ to 1 mΩ*
R2
Optional Slew-Rate Control
Typical 0 to 100 kΩ*
C1
Optional Slew-Rate Control
Typical 1000 pF
The Si1867DL is ideally suited for high-side load switching in
portable applications. The integrated n-channel level-shift
devices saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
different load types.
* Minimum R1 value should be least 10 x R2 to ensure Q1 turn-on.
Document Number: 72534
S10-0792-Rev. D, 05-Apr-10
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1
Si1867DL
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM
Si1867DL
SC70-6
Top View
4
2, 3
D2
S2
1
6
R1, C 1
VB
D2
D2
2
5
ON/OFF
3
4
S2
XX
YY
R2
Q2
Marking Code
6
Lot Traceability
and Date Code
Part # Code
R1, C1
Q1
5
ON/OFF
1
Ordering Information: Si1867DL-T1-E3 (Lead (Pb)-free)
Si1867DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
R2
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
VIN
8
VON/OFF
8
Input Voltage
ON/OFF Voltage
Continuousa, b
Load Current
Continuous Intrinsic Diode Conduction
Pulsedb, c
a
Operating Junction and Storage Temperature Range
ESD Rating, MIL-STD-833D Human Body Model (100 pF, 1500 Ω)
V
± 0.6
IL
A
±3
IS
Maximum Power Dissipationa
Unit
- 0.4
PD
0.4
W
TJ, Tstg
- 55 to 150
°C
ESD
2
kV
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Maximum Junction-to-Ambient (Continuous Current)a
RthJA
260
320
Maximum Junction-to-Foot (Q2)
RthJF
190
230
Unit
°C/W
SPECIFICATIONS TJ = 25 °C unless otherwise noted
Parameter
Symbol
Test Conditions
Reverse Leakage Current
IFL
VIN = 8 V, VON/OFF = 0 V
Diode Forward Voltage
VSD
lS = - 0.4 A
Min.
Typ.
Max.
Unit
1
µA
0.85
1.1
V
8
V
VON/OFF = 1.5 , VIN = 4.5 V, ID = 0.6 A
0.480
0.600
VON/OFF = 1.5 , VIN = 2.5 V, ID = 0.5 A
0.690
0.850
VON/OFF = 1.5 , VIN = 1.8 V, ID = 0.2 A
0.950
1.200
OFF Characteristics
ON Characteristics
Input Voltage
On-Resistance (P-Channel) at 1 A
On-State (P-Channel) Drain-Current
1.8
VIN
RDS(on)
ID(on)
VIN-OUT ≤ 0.2 V, VIN = 5 V, VON/OFF = 1.5 V
1
VIN-OUT ≤ 0.3 V, VIN = 3 V, VON/OFF = 1.5 V
1
Ω
A
Notes:
a) Surface mounted on FR4 board.
b) VIN = 8 V, VON/OFF = 8 V, TA = 25 °C.
c) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 72534
S10-0792-Rev. D, 05-Apr-10
Si1867DL
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.0
2.0
VGS = 5 V thru 3 V
1.6
I D - Drain Current (A)
I D - Drain Current (A)
TC = - 55 °C
2.5 V
1.6
1.2
2V
1.8 V
0.8
1.2
25 °C
125 °C
0.8
1.5 V
0.4
0.4
1V
0.0
0.0
0.0
0
1
2
3
4
5
0.5
1.0
1.5
2.0
2.5
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2.0
1.5
1.6
1.2
VGS = 1.8 V
1.2
V D R O P (V)
RD S(on) - On-Resistance (Ω)
VON/OFF = 1.5 V to 8 V
VGS = 2.5 V
0.8
0.9
TJ = 125 °C
VGS = 4.5 V
0.4
0.0
0.0
0.3
0.4
0.8
1.2
1.6
0.0
0.0
2.0
0.4
0.8
ID - Drain Current (A)
1.6
2.0
VDROP vs. IL at VIN = 4.5 V
2.5
1.5
VON/OFF = 1.5 V to 8 V
VON/OFF = 1.5 V to 8 V
1.2
1.5
0.9
VD R O P (V)
2.0
TJ = 125 °C
1.0
TJ = 125 °C
0.6
TJ = 25 °C
TJ = 25 °C
0.5
0.0
0.0
1.2
IL (A)
On-Resistance vs. Drain Current
V D R O P (V)
TJ = 25 °C
0.6
0.3
0.4
0.8
1.2
1.6
0.0
0.0
0.2
0.4
0.6
0.8
IL (A)
IL (A)
VDROP vs. IL at VIN = 2.5 V
VDROP vs. IL at VIN = 1.8 V
Document Number: 72534
S10-0792-Rev. D, 05-Apr-10
1.0
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3
Si1867DL
Vishay Siliconix
1.6
2.0
1.4
1.6
R D S(on) - On-Resistance (Ω )
(Normalized)
R DS(on) - On-Resistance
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.2
VGS = 4.5 V
ID = 0.6 A
1.0
0.8
1.2
ID = 0.6 A
ID = 0.2 A
0.8
0.4
VGS = 2.5 V
ID = 0.5 A
0.6
- 50
0.0
- 25
0
25
50
75
100
125
0
150
On Resistance vs. Junction Temperature
2
3
4
5
On-Resistance vs. Gate-to-Source Voltage
14
12
tf
12
tf
Time (µs)
8
8
6
tr
IL = 1 A
VON/OFF = 3 V
Ci = 10 µF
Co = 1 µF
10
IL = 1 A
VON/OFF = 3 V
Ci = 10 µF
Co = 1 µF
10
Time (µs)
1
VGS - Gate-to-Source Voltage (V)
TJ - Junction Temperature (°C)
td(off)
6
4
td(off)
4
tr
2
2
td(on)
td(on)
0
0
0
2
4
6
8
10
0
2
4
8
R2 (kΩ)
Switching Variation
R2 at VIN = 4.5 V, R1 = 20 kΩ
Switching Variation
R2 at VIN = 2.5 V, R1 = 20 kΩ
10
80
12
td(off)
tr
IL = 1 A
VON/OFF = 3 V
Ci = 10 µF
Co = 1 µF
10
64
8
tf
tf
Time (µs)
Time (µs)
6
R2 (kΩ)
6
48
IL = 1 A
VON/OFF = 3 V
Ci = 10 µF
Co = 1 µF
32
4
td(off)
16
2
tr
td(on)
td(on)
0
0
0
2
4
6
R2 (kΩ)
Switching Variation
R2 at VIN = 1.8 V, R1 = 20 kΩ
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4
8
0
20
40
60
80
100
R2 (kΩ)
Switching Variation
R2 at VIN = 4.5 V, R1 = 300 kΩ
Document Number: 72534
S10-0792-Rev. D, 05-Apr-10
Si1867DL
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
70
tf
IL = 1 A
VON/OFF = 3 V
Ci = 10 µF
Co = 1 µF
60
50
td(off)
50
td(off)
30
20
tf
Time (µs)
Time (µs)
40
IL = 1 A
VON/OFF = 3 V
Ci = 10 µF
Co = 1 µF
tr
tr
40
30
td(on)
20
td(on)
10
10
0
0
0
20
40
60
80
100
0
20
40
60
80
R2 (kΩ)
R2 (kΩ)
Switching Variation
R2 at VIN = 2.5 V, R1 = 300 kΩ
Switching Variation
R2 at VIN = 1.8 V, R1 = 300 kΩ
100
I D - Drain Current (A)
10
1 ms
Limited
by R DS(on)*
1
10 ms
100 ms
0.1
1 s, 10 s
DC
TA = 25 °C
Single Pulse
0.01
0.1
* VGS
1
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 400 °C/W
0.02
3. TJM - T A = PDMZthJA(t)
Single Pulse
0.01
10-4
10-3
4. Surface Mounted
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72534.
Document Number: 72534
S10-0792-Rev. D, 05-Apr-10
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