Si1902CDL
www.vishay.com
Vishay Siliconix
Dual N-Channel 20 V (D-S) MOSFET
FEATURES
SC-70 (6 leads)
SOT-363 Dual
D1
6
• TrenchFET® power MOSFET
S2
4
G2
5
• 100 % Rg tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
1
S1
Top View
2
G1
APPLICATIONS
3
D2
• Load
switch
and
DC/DC converter for
portable devices
• High speed switching
Marking code: PE
D2
D1
G1
G2
PRODUCT SUMMARY
VDS (V)
20
RDS(on) max. () at VGS = 4.5 V
0.235
RDS(on) max. () at VGS = 2.5 V
0.306
Qg typ. (nC)
ID (A) a
Configuration
S2
S1
N-Channel
MOSFET
0.9
N-Channel
MOSFET
1.1
Dual
ORDERING INFORMATION
Package
SC-70
Lead (Pb)-free and halogen-free
Si1902CDL-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
20
Gate-source voltage
VGS
± 12
TC = 25 °C
Continuous drain current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
Continuous source-drain diode current
0.9
ID
1 b, c
0.8 b, c
IDM
TC = 25 °C
TA = 25 °C
Maximum power dissipation
TA = 25 °C
0.35
IS
0.25 b, c
0.42
0.27
PD
W
0.30 b, c
0.23 b, c
TA = 70 °C
Operating junction and storage temperature range
A
2
TC = 25 °C
TC = 70 °C
V
1.1
TA = 70 °C
Pulsed drain current (t = 300 μs)
UNIT
TJ, Tstg
-55 to +150
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
Maximum junction-to-ambient b, d
t5s
RthJA
290
350
Maximum junction-to-foot (drain)
Steady state
RthJF
250
300
UNIT
°C/W
Notes
a. Based on TC = 25 °C
b. Surface mounted on 1" x 1" FR4 board
c. t = 5 s
d. Maximum under steady state conditions is 410 °C/W
S20-0818-Rev. C, 26-Oct-2020
Document Number: 67876
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si1902CDL
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 μA
20
-
-
-
V
25
-
-
-2.6
-
Static
Drain-source breakdown voltage
VDS/TJ
VDS temperature coefficient
VGS(th) temperature coefficient
VGS(th)/TJ
Gate-source threshold voltage
ID = 250 μA
mV/°C
VGS(th)
VDS = VGS, ID = 250 μA
0.6
-
1.5
V
Gate-source leakage
IGSS
VDS = 0 V, VGS = ± 12 V
-
-
± 100
nA
Zero gate voltage drain current
IDSS
On-state drain current a
ID(on)
Drain-source on-state resistance a
Forward transconductance
RDS(on)
gfs
VDS = 20 V, VGS = 0 V
-
-
1
VDS = 20 V, VGS = 0 V, TJ = 85 °C
-
-
10
VDS 5 V, VGS = 4.5 V
2
-
-
A
VGS = 4.5 V, ID = 1 A
-
0.195
0.235
VGS = 2.5 V, ID = 0.3 A
-
0.255
0.306
VDS = 10 V, ID = 1 A
-
3
-
-
62
-
VDS = 10 V, VGS = 0 V, f = 1 MHz
-
20
-
-
7
-
VDS = 10 V, VGS = 10 V, ID = 1 A
-
2
3
-
0.9
1.4
VDS = 10 V, VGS = 4.5 V, ID = 1 A
-
0.2
-
-
0.2
-
f = 1 MHz
2.4
12
24
-
4
8
μA
ms
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Gate resistance
Rg
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
tr
td(off)
VDD = 10 V, RL = 12.5
ID 0.8 A, VGEN = 10 V, Rg = 1
tf
td(on)
tr
td(off)
VDD = 10 V, RL = 12.5
ID 0.8 A, VGEN = 4.5 V, Rg = 1
tf
-
13
20
-
11
20
-
9
18
-
6
12
-
16
24
-
13
20
-
10
20
pF
nC
ns
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
Pulse diode forward current a
ISM
Body diode voltage
VSD
TC = 25 °C
IS = 0.8 A
-
-
0.35
-
-
2
-
0.8
1.2
V
nC
Body diode reverse recovery time
trr
-
2
4
Body diode reverse recovery charge
Qrr
-
8
16
Reverse recovery fall time
ta
-
5
-
Reverse recovery rise time
tb
-
3
-
IF = 0.8 A, di/dt = 100 A/μs
A
ns
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2%
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S20-0818-Rev. C, 26-Oct-2020
Document Number: 67876
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si1902CDL
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2.0
1.0
VGS = 5 V thru 2.5 V
0.8
ID - Drain Current (A)
ID - Drain Current (A)
1.5
VGS = 2 V
1.0
0.6
0.4
TC = 25 °C
0.5
0.2
TC = 125 °C
VGS = 1.5 V
TC = - 55 °C
0
0
0
0.5
1.0
1.5
0
2.0
0.5
1
1.5
2
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.40
80
Ciss
60
0.28
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0.34
VGS = 2.5 V
0.22
VGS = 4.5 V
40
Coss
20
0.16
Crss
0.10
0
0.5
1
1.5
0
2
0
5
10
15
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
Capacitance
On-Resistance vs. Drain Current and Gate Voltage
1.8
10
ID = 1 A
RDS(on) - On-Resistance (Normalized)
ID = 1 A
VGS - Gate-to-Source Voltage (V)
20
VDS = 10 V
8
6
VDS = 5 V
VDS = 16 V
4
2
0
0
0.5
1
1.5
Qg - Total Gate Charge (nC)
Gate Charge
S20-0818-Rev. C, 26-Oct-2020
2
VGS = 4.5 V
1.5
1.2
VGS = 2.5 V
0.9
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 67876
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si1902CDL
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.5
10
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 1 A
TJ = 150 °C
1
0.4
TJ = 125 °C
0.3
TJ = 25 °C
0.2
TJ = 25 °C
0.1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.8
2.6
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
4.2
5
On-Resistance vs. Gate-to-Source Voltage
1.20
10
8
Power (W)
1.05
VGS(th) (V)
3.4
VGS - Gate-to-Source Voltage (V)
ID = 250 μA
0.90
6
4
0.75
2
0.60
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
TJ - Temperature (°C)
Threshold Voltage
0.1
Time (s)
1
10
Single Pulse Power (Junction-to-Ambient)
10
ID - Drain Current (A)
Limited by RDS(on)*
100 μs
1
1 ms
10 ms
0.1
100 ms
TC = 25 °C
Single Pulse
0.01
0.1
BVDSS Limited
DC, 10s, 1s
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area, Junction-to-Ambient
S20-0818-Rev. C, 26-Oct-2020
Document Number: 67876
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si1902CDL
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1.2
ID - Drain Current (A)
0.9
0.6
0.3
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating a
0.4
0.5
0.4
0.3
Power (W)
Power (W)
0.3
0.2
0.2
0.1
0.1
0.0
0
0
25
50
75
100
125
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
150
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S20-0818-Rev. C, 26-Oct-2020
Document Number: 67876
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si1902CDL
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for
silicon technology and package reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67876.
S20-0818-Rev. C, 26-Oct-2020
Document Number: 67876
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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Revision: 01-Jan-2022
1
Document Number: 91000