SI1903DL-T1-GE3

Si1903DL Vishay Siliconix Dual P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.995 at VGS = - 4.5 V ± 0.44 1.190 at VGS = - 3.6 V ± 0.40 1.8 at VGS = - 2.5 V ± 0.32 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 2.5 V Rated • Compliant to RoHS Directive 2002/95/EC SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code QA X YY S1 Lot Traceability and Date Code Part # Code Top View Ordering Information: Si1903DL-T1-E3 (Lead (Pb)-free) Si1903DL-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Symbol VDS VGS TA = 25 °C TA = 85 °C ID IDM IS Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa TA = 25 °C TA = 85 °C PD TJ, Tstg Operating Junction and Storage Temperature Range 5s Steady State - 20 ± 12 ± 0.44 ± 0.41 ± 0.31 ± 0.30 ± 1.0 - 0.25 - 0.23 0.30 0.27 0.16 0.14 - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t≤5s Steady State Steady State RthJA RthJF Typical 360 400 300 Maximum 415 460 350 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 71081 S10-0110-Rev. E, 18-Jan-10 www.vishay.com 1 Si1903DL Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. - 0.6 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = - 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Dynamicb Voltagea -1 -5 A 0.850 0.995 VGS = - 3.6 V, ID = - 0.38 A 1.0 1.190 VGS = - 2.5 V, ID = - 0.25 A 1.4 1.80 VDS = - 10 V, ID = - 0.41 A 0.8 IS = - 0.23 A, VGS = 0 V - 0.8 - 1.2 1.2 1.8 VDS = - 10 V, VGS = - 4.5 V, ID = - 0.41 A 0.45 Qg Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) VDD = - 10 V, RL = 20 Ω ID ≅ - 0.5 A, VGEN = - 4.5 V, Rg = 6 Ω td(off) tf Source-Drain Reverse Recovery Time trr Ω S V nC 0.25 tr Fall Time µA - 1.0 VGS = - 4.5 V, ID = - 0.41 A gfs Total Gate Charge Turn-Off DelayTime VDS = - 20 V, VGS = 0 V VSD Gate-Source Charge Rise Time V nA VDS = - 20 V, VGS = 0 V, TJ = 85 °C VDS = - 5 V, VGS = - 4.5 V RDS(on) 1.5 ± 100 IF = - 0.23 A, dI/dt = 100 A/µs 7.5 15 20 40 8.5 17 12 24 25 40 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.0 1.0 VGS = 5 V thru 3 V TC = - 55 °C 0.8 0.8 I D - Drain Current (A) I D - Drain Current (A) 2.5 V 0.6 0.4 2V 1V 0.4 0.5 1.0 1.5 1.5 V 2.0 2.5 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 125 °C 0.6 0.2 0.2 0.0 0.0 25 °C 3.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 71081 S10-0110-Rev. E, 18-Jan-10 Si1903DL Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3.0 100 80 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 2.5 2.0 VGS = 2.5 V 1.5 VGS = 3.6 V 1.0 Ciss 60 40 Coss VGS = 4.5 V 20 0.5 Crss 0.0 0.0 0 0.2 0.4 0.6 0.8 1.0 0 12 16 I D - Drain Current (A) VDS - Drain-to-Source Voltage (V) Capacitance 20 1.6 VGS = 4.5 V ID = 0.41 A VDS = 10 V ID = 0.41 A 1.4 3 2 (Normalized) 4 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 8 On-Resistance vs. Drain Current 5 1.2 1.0 0.8 1 0 0.0 4 0.2 0.4 0.6 0.8 1.0 1.2 0.6 - 50 1.4 - 25 0 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Gate Charge 3.0 1 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 2.5 TJ = 150 °C TJ = 25 °C ID = 0.41 A 2.0 1.5 1.0 0.5 0.1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 71081 S10-0110-Rev. E, 18-Jan-10 5 www.vishay.com 3 Si1903DL Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 5 0.4 4 ID = 250 µA 0.2 Power (W) VGS(th) Variance (V) 0.3 0.1 3 2 0.0 1 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 0 10-3 150 10-2 10-1 1 10 100 600 Time (s) TJ - Temperature (°C) Threshold Voltage Single Pulse Power 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 400 C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 4. Surface Mounted 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71081. www.vishay.com 4 Document Number: 71081 S10-0110-Rev. E, 18-Jan-10 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000