SI1967DH-T1-GE3

Si1967DH Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.490 at VGS = - 4.5 V - 1.3a 0.640 at VGS = - 2.5 V - 1.2 0.790 at VGS = - 1.8 V - 1.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • PWM Optimized • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 1.6 nC APPLICATIONS SOT-363 SC-70 (6-LEADS) • Load Switch for Portable Devices S1 1 G1 2 6 5 D1 Marking Code DF G2 XX Lot Traceability and Date Code D2 3 4 S2 YY S1 S2 G1 G2 Part # Code Top View Ordering Information: Si1967DH-T1-E3 (Lead (Pb)-free) Si1967DH-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 D2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ±8 TC = 70 °C - 1.1 ID TA = 25 °C - 1.0b, c - 0.83b, c TA = 70 °C Pulsed Drain Current IDM -3 IS - 0.6b, c TC = 25 °C Continuous Source-Drain Diode Current 1.25 TC = 70 °C 0.8 PD TA = 25 °C W 0.74b, c 0.47b, c TA = 70 °C Operating Junction and Storage Temperature Range A -1 TA = 25 °C TC = 25 °C Maximum Power Dissipation V - 1.3a TC = 25 °C Continuous Drain Current (TJ = 150 °C) Unit TJ, Tstg °C - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Junction-to-Ambientb, d t≤5s RthJA Maximum 130 170 Maximum Junction-to-Foot (Drain) Steady State RthJF 80 100 Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 220 °C/W. Document Number: 68784 S10-0721-Rev. B, 29-Mar-10 www.vishay.com 1 Si1967DH Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) Gate-Source Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs ID = - 250 µA VDS = VGS , ID = - 250 µA V - 20 mV/°C 2 - 0.4 - 1.0 V nA VDS = 0 V, VGS = ± 8 V ± 100 VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 85 °C - 10 VDS ≤ - 5 V, VGS = - 4.5 V -3 µA A VGS = - 4.5 V, ID = - 0.91 A 0.390 0.490 VGS = - 2.5 V, ID = - 0.8 A 0.500 0.640 VGS = - 1.8 V, ID = - 0.25 A 0.640 0.790 VDS = - 10 V, ID = - 0.91 A 2 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 110 VDS = - 10 V, VGS = 0 V, f = 1 MHz 26 pF 16 VDS = - 10 V, VGS = - 8 V, ID = - 1.1 A 2.6 4.0 1.6 2.4 VDS = - 10 V, VGS = - 4.5 V, ID = - 1.1 A 0.36 0.33 f = 1 MHz Ω 7.5 12 20 27 40 15 25 tf 10 15 td(on) 2 5 12 20 td(on) tr td(off) tr td(off) nC VDD = - 10 V, RL = 12 Ω ID ≅ - 0.83 A, VGEN = - 4.5 V, Rg = 1 Ω VDD = - 10 V, RL = 12 Ω ID ≅ - 0.83 A, VGEN = - 8 V, Rg = 1 Ω tf 12 20 10 15 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C - 1.0 - 3.0 IS = - 0.9 A IF = - 0.83 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.8 - 1.2 V 25 50 ns 15 30 nC 12 13 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 68784 S10-0721-Rev. B, 29-Mar-10 Si1967DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3.0 1.0 VGS = 5 V thru 2.5 V 0.8 I D - Drain Current (A) I D - Drain Current (A) 2.5 VGS = 2 V 2.0 1.5 1.0 VGS = 1.5 V 0.6 0.4 TC = 25 °C TC = 125 °C 0.2 0.5 TC = - 55 °C VGS = 1 V 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.0 3.0 0.8 1.2 1.6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.0 200 1.2 1.0 160 0.8 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.4 VGS = 1.8 V VGS = 2.5 V 0.6 0.4 Ciss 120 80 Coss VGS = 4.5 V 40 0.2 Crss 0.0 0.0 0 0.5 1.0 1.5 2.0 2.5 0 3.0 3 ID - Drain Current (A) 9 12 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.4 8 VGS = 4.5 V, 2.5 V; ID = 0.91 A ID = 1 A 1.3 VDS = 10 V 4 VDS = 16 V 2 1.2 (Normalized) 6 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 6 1.1 VGS = 1.8 V; ID = 0.12 A 1.0 0.9 0.8 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.7 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 68784 S10-0721-Rev. B, 29-Mar-10 150 www.vishay.com 3 Si1967DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.0 10 TJ = 150 °C R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = - 0.91 A TJ = 25 °C 1 1.6 1.2 TJ = 125 °C 0.8 0.4 TJ = 25 °C 0.1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.80 5 0.75 4 0.65 Power (W) VGS(th) (V) 0.70 ID = 250 µA 0.60 0.55 3 2 0.50 1 0.45 0.40 - 50 - 25 0 25 50 75 100 125 0 0.01 150 TJ - Temperature (°C) 0.1 1 10 100 600 Time (s) Threshold Voltage Single Pulse Power 10 I D - Drain Current (A) Limited by RDS(on)* 1 1 ms 10 ms 0.1 100 ms 1 s, 10 s DC TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 68784 S10-0721-Rev. B, 29-Mar-10 Si1967DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.4 1.6 1.2 Power Dissipation (W) I D - Drain Current (A) 1.2 Package Limited 0.8 0.4 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0 25 50 75 100 125 150 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power, Junction-to-Foot 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68784 S10-0721-Rev. B, 29-Mar-10 www.vishay.com 5 Si1967DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 220 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 4. Surface Mounted 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68784. www.vishay.com 6 Document Number: 68784 S10-0721-Rev. B, 29-Mar-10 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1