Si1970DH
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)a
0.225 at VGS = 4.5 V
1.3a
0.345 at VGS = 2.5 V
1.3a
VDS (V)
30
Qg (Typ.)
1.15 nC
APPLICATIONS
SOT-363
SC-70 (6-LEADS)
S1
1
6
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
• Load Switch for Portable Applications
D1
D1
D2
G1
2
5
G2
D2
3
4
S2
CD
XX
YY
Marking Code
Lot Traceability
and Date Code
G1
G2
Part # Code
Top View
Ordering Information: Si1970DH-T1-E3 (Lead (Pb)-free)
Si1970DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
S2
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
± 12
TC = 70 °C
TA = 25 °C
1.3a
ID
1.3a
TA = 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
1.1
TA = 25 °C
1.0
IS
0.61c
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
1.25
0.8
PD
W
0.74b, c
0.47b, c
TA = 70 °C
Operating Junction and Storage Temperature Range
A
4
IDM
TC = 25 °C
V
1.3a
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
Unit
TJ, Tstg
- 55 to 150
Soldering Recommendations (Peak Temperature)d, e
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Maximum Junction-to-Ambientb, f
t≤5s
RthJA
130
170
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
80
100
Unit
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 220 °C/W.
Document Number: 74343
S10-0721-Rev. B, 29-Mar-10
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1
Si1970DH
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
V
25
mV/°C
- 3.2
0.6
1.6
V
± 100
ns
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
10
VDS ≤ 5 V, VGS = 4.5 V
4
µA
A
VGS = 4.5 V, ID = 1.2 A
0.185
0.225
VGS = 2.5 V, ID = 0.29 A
0.285
0.345
VDS = 15 V, ID = 1.2 A
2.5
VDS = 15 V, VGS = 0 V, f = 1 MHz
17
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
95
VDS = 15 V, VGS = 10 V, ID = 1.4 A
VDS = 10 V, VGS = 4.5 V, ID = 1.4 A
td(off)
2.5
3.8
1.15
1.7
0.4
Ω
4
9
15
VDD = 15 V, RL = 13.6 Ω
ID ≅ 1.1 A, VGEN = 4.5 V, Rg = 1 Ω
20
30
15
25
tf
15
25
td(on)
5
10
10
15
10
15
6
12
tr
td(off)
nC
0.3
f = 1 MHz
td(on)
tr
pF
9
VDD = 15 V, RL = 13.6 Ω
ID ≅ 1.1 A, VGEN = 10 V, Rg = 1 Ω
tr
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
TC = 25 °C
1
4
IS = 1.1 A, VGS = 0 V
0.85
1.2
A
V
Body Diode Reverse Recovery Time
trr
20
40
ns
Body Diode Reverse Recovery Charge
Qrr
10
20
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = 1.1 A, dI/dt = 100 A/µs, TJ = 25 °C
16.5
3.5
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 74343
S10-0721-Rev. B, 29-Mar-10
Si1970DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
4
2.0
VGS = 5 V thru 3.5 V
I D - Drain Current (A)
I D - Drain Current (A)
1.6
VGS = 3 V
3
2
VGS = 2.5 V
1.2
0.8
TC = 25 °C
1
VGS = 2 V
0.4
TC = 125 °C
VGS = 1.5 V
0
0.0
0.5
1.0
1.5
2.0
2.5
TC = - 55 °C
0.0
0.0
3.0
0.5
VDS - Drain-to-Source Voltage (V)
1.5
2.0
2.5
3.0
25
30
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.6
150
0.5
120
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
1.0
0.4
VGS = 2.5 V
0.3
Ciss
90
60
VGS = 4.5 V
0.2
30
0.1
0
Coss
Crss
0
1
2
3
4
0
5
10
Capacitance
10
1.8
ID = 1.4 A
VGS = 4.5 V, I D = 1.4 A
1.6
8
6
VDS = 24 V
4
2
1.4
(Normalized)
VDS = 15 V
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
20
VDS - Drain-Source Voltage (V)
I D - Drain Current (A)
On-Resistance vs. Drain Current
0
0.0
15
1.2
VGS = 2.5 V, ID = 0.3 A
1.0
0.8
0.5
1.0
1.5
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 74343
S10-0721-Rev. B, 29-Mar-10
2.0
2.5
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si1970DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
0.8
TJ = 150 °C
TJ = 25 °C
1.0
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 1.4 A
0.6
TA = 125 °C
0.4
0.2
TA = 25 °C
0.1
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
VSD - Source-to-Drain Voltage (V)
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Forward Diode Voltage
On-Resistance vs. Gate-Source Voltage
1.5
5
1.3
4
Power (W)
VG S(th) (V)
ID = 250 µA
1.1
0.9
0.7
0.5
- 50
3
2
1
- 25
0
25
50
75
100
125
150
0
0.01
0.1
1
10
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
100
600
10
Limited by R DS(on)*
I D - Drain Current (A)
100 µs
1
1 ms
10 ms
0.1
100 ms
T A = 25 °C
Single Pulse
0.01
0.1
* VGS
1 s, 10 s
DC
BVDSS Limited
1
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 74343
S10-0721-Rev. B, 29-Mar-10
Si1970DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.4
2.0
1.2
Power Dissipation (W)
I D - Drain Current (A)
1.6
Package Limited
1.2
0.8
1.0
0.8
0.6
0.4
0.4
0.2
0.0
0.0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
25
50
75
100
125
150
T C - Case Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74343
S10-0721-Rev. B, 29-Mar-10
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Si1970DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 170 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
10-4
4. Surface Mounted
10-3
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74343.
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Document Number: 74343
S10-0721-Rev. B, 29-Mar-10
Legal Disclaimer Notice
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Vishay
Disclaimer
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Revision: 08-Feb-17
1
Document Number: 91000
