SI2301BDS-T1-E3

Si2301BDS Vishay Siliconix P-Channel 2.5 V (G-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)b 0.100 at VGS = - 4.5 V - 2.4 0.150 at VGS = - 2.5 V - 2.0 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC TO-236 (SOT-23) G 1 3 S D 2 Top View Si2301 BDS (L1)* * Marking Code Ordering Information: Si2301BDS-T1-E3 (Lead (Pb)-free) Si2301BDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 5s Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)b TA = 25 °C TA = 70 °C Pulsed Drain Currenta IS TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range PD V - 2.4 - 2.2 - 1.9 - 1.8 IDM Continuous Source Current (Diode Conduction)b Power Dissipationb ID A - 10 - 0.72 - 0.6 0.9 0.7 0.57 0.45 TJ, Tstg Unit - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc Symbol RthJA Typical Maximum 120 145 140 175 Unit °C/W Notes: a. Pulse width limited by maximum junction temperature. b. Surface mounted on FR4 board, t  5 s. c. Surface mounted on FR4 board. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72066 S11-2044-Rev. F, 17-Oct-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2301BDS Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Limits Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage VDS VGS = 0 V, ID = - 250 µA - 20 VGS(th) VDS = VGS, ID = - 250 µA - 0.45 IGSS VDS = 0 V, VGS = ± 8 V ± 100 VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage VDS  - 5 V, VGS = - 4.5 V -6 VDS  - 5 V, VGS = - 2.5 V -3 - 0.95 nA µA A VGS  - 4.5 V, ID = - 2.8 A 0.080 0.100 VGS = - 2.5 V, ID = - 2 A 0.110 0.150 gfs VDS = - 5 V, ID = - 2.8 A 6.5 VSD IS = - 0.75 A, VGS = 0 V - 0.80 - 1.2 VDS = - 6 V, VGS = - 4.5 V ID  - 2.8 A 4.5 10 0.7 RDS(on) V  S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss f = 1 MHz nC 1.1 2 8 16  375 VDS = - 6 V, VGS = 0 V, f = 1 MHz pF 95 65 c Switching Turn-On Time Turn-Off Time td(on) tr td(off) tf VDD = - 6 V, RL = 6  ID  - 1 A, VGEN = - 4.5 V Rg = 6  20 30 40 60 30 45 20 30 ns Notes: a. Pulse test: pulse width  300 µs duty cycle 2 %. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72066 S11-2044-Rev. F, 17-Oct-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2301BDS Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 10 VGS = 5 thru 2.5 V TC = - 55 °C 8 I D - Drain Current (A) I D - Drain Current (A) 8 2V 6 4 1.5 V 2 25 °C 125 °C 6 4 2 1V 0 0 1 2 3 4 0 0.0 5 0.5 VDS - Drain-to-Source Voltage (V) 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) Output Characteristics 3.0 Transfer Characteristics 0.5 800 0.4 C - Capacitance (pF) 600 R DS(on) - 0.3 0.2 VGS = 2.5 V Ciss 400 200 0.1 Coss VGS = 4.5 V Crss 0.0 0 0 2 4 6 ID - Drain Current (A) 8 10 0 4 8 On-Resistance vs. Drain Current 16 20 Capacitance 1.6 5 R DS(on) - On-Resistance (Normalized) VDS = 10 V ID = 2.8 A VGS - Gate-to-Source Voltage (V) 12 VDS - Drain-to-Source Voltage (V) 4 3 2 1 0 0 1 2 3 Qg - Total Gate Charge (nC) Gate Charge Document Number: 72066 S11-2044-Rev. F, 17-Oct-11 4 5 VGS = 4.5 V ID = 2.8 A 1.4 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2301BDS Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.6 10 TJ = 150 °C 0.4 ID = 2.8 A 0.3 1 R DS(on) - I S - Source Current (A) 0.5 TJ = 25 °C 0.2 0.1 0.0 0.1 0 0.2 0.4 0.6 0.8 1.0 0 1.2 1 Source-Drain Diode Forward Voltage 3 4 5 On-Resistance vs. Gate-to-Source Voltage 10 0.4 0.3 8 0.2 Power (W) VGS(th) Variance (V) 2 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) ID = 250 µA 0.1 6 4 0.0 TA = 25 °C 2 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 1 TJ - Temperature (°C) Threshold Voltage 10 Time (s) 100 1000 Single Pulse Power 100 10 µs 100 µs I D - Drain Current (A) 10 Limited by RDS(on)* 1 ms 1 10 ms TA = 25 °C Single Pulse 100 ms 0.1 DC, 100 s, 10 s, 1 s 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which RDS(on) is specified Square Wave Pulse Duration (s) Safe Operating Area www.vishay.com 4 Document Number: 72066 S11-2044-Rev. F, 17-Oct-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2301BDS Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10 -3 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72066. Document Number: 72066 S11-2044-Rev. F, 17-Oct-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS Min INCHES Max Min Max 0.044 A 0.89 1.12 0.035 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 Document Number: 71196 09-Jul-01 www.vishay.com 1 Application Note 826 Vishay Siliconix 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72609 Revision: 21-Jan-08 www.vishay.com 25 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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