SI2301CDS-T1-BE3

Si2301CDS Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A)a 0.112 at VGS = - 4.5 V - 3.1 0.142 at VGS = - 2.5 V - 2.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 3.3 nC APPLICATIONS • Load Switch TO-236 (SOT-23) G 1 3 S D 2 Top View Si2301CDS (N1)* * Marking Code Ordering Information: Si2301CDS-T1-E3 (Lead (Pb)-free) Si2301CDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ±8 TC = 25 °C TC = 70 °C Continuous Drain Current (TJ = 150 °C) TA = 25 °C - 2.5 ID - 2.3b, c - 1.8b, c IDM TC = 25 °C Continuous Source-Drain Diode Current TA = 25 °C Maximum Power Dissipation - 10 IS - 0.72b, c TC = 25 °C 1.6 1.0 PD 0.86b, c W 0.55b, c TA = 70 °C Operating Junction and Storage Temperature Range A - 1.3 TC = 70 °C TA = 25 °C V - 3.1 TA = 70 °C Pulsed Drain Current Unit TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient b, d Maximum Junction-to-Foot (Drain) Symbol RthJA Typical Maximum 5 s 120 145 Steady State RthJF 62 78 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 175 °C/W. Document Number: 68741 S10-2430-Rev. C, 25-Oct-10 www.vishay.com 1 Si2301CDS Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs - 18 ID = - 250 µA Gate-Source Leakage V mV/°C 2.2 - 0.4 -1 V ± 100 nA VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 VDS - 5 V, VGS = - 4.5 V -6 µA A VGS = - 4.5 V, ID = - 2.8 A 0.090 0.112 VGS = - 2.5 V, ID = - 2.0 A 0.110 0.142 VDS = - 5 V, ID = - 2.8 A 9.5  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 405 VDS = - 10 V, VGS = 0 V, f = 1 MHz 75 VDS = - 10 V, VGS = - 4.5 V, ID = - 3 A 5.5 10 3.3 6 VDS = - 10 V, VGS = - 2.5 V, ID = - 3 A 0.7 f = 1 MHz 6.0 55 tr nC 1.3 td(on) td(off) pF 11 VDD = - 10 V, RL = 10  ID = - 1 A, VGEN = - 4.5 V, Rg = 1  tf  20 35 60 30 50 10 20 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C - 1.3 - 10 IS = - 0.7 A IF = - 3.0 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.8 - 1.2 V 30 50 ns 25 50 nC 15 15 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 68741 S10-2430-Rev. C, 25-Oct-10 Si2301CDS Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.00 10 VGS = 2 V VGS = 5 V thru 2.5 V 0.75 I D - Drain Current (A) I D - Drain Current (A) 8 6 VGS = 1.5 V 4 TC = - 55 °C 0.50 TC = 25 °C 0.25 2 TC = 125 °C VGS = 1 V 0 0.0 0.5 1.0 1.5 0.00 0.0 2.0 0.3 VDS - Drain-to-Source Voltage (V) 0.9 1.2 1.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.20 800 0.15 600 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.6 VGS = 2.5 V 0.10 VGS = 4.5 V 0.05 Ciss 400 200 Coss Crss 0.00 0 0 2 4 6 8 10 0 5 ID - Drain Current (A) 15 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.5 8 ID = 2.8 A ID = 3 A 6 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 10 VDS = 5 V VDS = 10 V 4 VDS = 15 V 2 1.3 1.1 VGS = 4.5 V 0.9 VGS = 1.8 V 0 0 2 4 6 Qg - Total Gate Charge (nC) Gate Charge Document Number: 68741 S10-2430-Rev. C, 25-Oct-10 8 10 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si2301CDS Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.60 10 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 2.8 A TJ = - 50 °C TJ = 150 °C 1 TJ = 25 °C 0.45 0.30 TJ = 125 °C 0.15 TJ = 25 °C 0.1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 10 0.4 0.3 8 0.2 Power (W) VGS(th) Variance (V) ID = 250 µA ID = 1 mA 0.1 6 4 0.0 2 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 TA = 25 °C 0 0.01 150 0.1 TJ - Temperature (°C) 1 10 100 1000 Time (s) Threshold Voltage Single Pulse Power 10 100 µs Limited by RDS(on)* I D - Drain Current (A) 1 ms 1 10 ms 100 ms 0.1 1s 10 s 100 s, DC TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 68741 S10-2430-Rev. C, 25-Oct-10 Si2301CDS Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJF = 50 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68741. Document Number: 68741 S10-2430-Rev. C, 25-Oct-10 www.vishay.com 5 Package Information Vishay Siliconix SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS Min INCHES Max Min Max 0.044 A 0.89 1.12 0.035 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 Document Number: 71196 09-Jul-01 www.vishay.com 1 Application Note 826 Vishay Siliconix 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72609 Revision: 21-Jan-08 www.vishay.com 25 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000