SI2302ADS-T1-GE3

Si2302ADS Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.060 at VGS = 4.5 V 2.4 0.115 at VGS = 2.5 V 2.0 • Halogen-free According to IEC 61249-2-21 Definition • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC TO-236 (SOT-23) G 1 3 S D 2 Top View Si2302ADS (2A)* * Marking Code Ordering Information: Si2302ADS-T1-E3 (Lead (Pb)-free) Si2302ADS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Symbol VDS VGS TA = 25 °C TA = 70 °C Pulsed Drain Currenta Continuous Source Current (Diode Conduction)a Power Dissipationa ID IDM IS TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range PD 5s Steady State 20 ±8 V 2.4 1.9 2.1 1.7 10 0.94 0.9 0.57 TJ, Tstg Unit 0.6 0.7 0.46 - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Symbol t≤5s Steady State RthJA Typical 115 140 Maximum 140 175 Unit °C/W Notes: a. Surface mounted on FR4 board. For SPICE model information via the Worldwide Web: www.vishay.com/www/product/spice.htm Document Number: 71831 S11-2000-Rev. J, 10-Oct-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2302ADS Vishay Siliconix SPECIFICATIONS (TA = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. 0.95 1.2 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage V(BR)DSS VGS = 0 V, ID = 10 µA 20 VGS(th) VDS = VGS, ID = 50 µA 0.65 IGSS VDS = 0 V, VGS = ± 8 V ± 100 VDS = 20 V, VGS = 0 V 0.1 VDS = 20 V, VGS = 0 V, TJ = 55 °C 2.0 Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage RDS(on) VDS ≥ 5 V, VGS = 4.5 V 6 VDS ≥ 5 V, VGS = 2.5 V 4 V nA µA A VGS = 4.5 V, ID = 3.6 A 0.045 0.060b VGS = 2.5 V, ID = 3.1 A 0.070 0.115 gfs VDS = 5 V, ID = 3.6 A 8 VSD IS = 0.94 A, VGS = 0 V 0.76 1.2 4.0 10 VDS = 10 V, VGS = 4.5 V, ID = 3.6 A 0.65 Ω S V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Input Capacitance Qgd Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg nC 1.5 300 VDS = 10 V, VGS = 0 V, f = 1 MHz 120 pF 80 f = 1 MHz 0.5 1 2 Ω Switching Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time td(on) tr td(off) tf VDD = 10 V, RL = 2.8 Ω ID ≅ 3.6 A, VGEN = 4.5 V, Rg = 6 Ω 7 15 55 80 16 60 10 25 ns Notes: a. Pulse test; PW ≤ 300 µs, duty cycle ≤ 2 %. b. Effective for production 10/04. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71831 S11-2000-Rev. J, 10-Oct-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2302ADS Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 10 10 VGS = 5 V thru 2.5 V 8 I D - Drain Current (A) I D - Drain Current (A) 8 6 2V 4 2 6 4 TC = 125 °C 2 0 V, 0.5 V, 1 V 1.5 V 25 °C - 55 °C 0 0.0 0 0 1 2 3 4 5 0.5 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.15 600 500 0.12 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1.0 0.09 VGS = 2.5 V 0.06 VGS = 4.5 V 400 Ciss 300 200 Coss 0.03 100 Crss 0.00 0 0 2 4 6 8 10 0 12 16 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 20 1.8 5 VDS = 10 V ID = 3.6 A 1.6 4 3 2 1 0 0 1 2 3 4 5 VGS = 4.5 V ID = 3.6 A 1.4 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 8 4 1.2 1.0 0.8 0.6 - 50 0 50 100 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 71831 S11-2000-Rev. J, 10-Oct-11 150 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2302ADS Vishay Siliconix 100 0.20 10 0.16 R DS(on) - On-Resistance (Ω) I S - Source Current (A) TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) TA = 150 °C 1 TA = 25 °C 0.10 0.01 0.001 0.12 0.08 ID = 3.6 A 0.04 0.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 10 0.3 0.2 8 ID = 250 µA 0.0 6 Power (W) VGS(th) Variance (V) 0.1 - 0.1 - 0.2 TC = 25 °C Single Pulse 4 - 0.3 2 - 0.4 0 - 0.5 - 50 0 50 100 0.01 150 0.1 1.0 10 100 1000 Time (s) TJ - Temperature (°C) Single Pulse Power Threshold Voltage 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71831. www.vishay.com 4 Document Number: 71831 S11-2000-Rev. J, 10-Oct-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS Min INCHES Max Min Max 0.044 A 0.89 1.12 0.035 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 Document Number: 71196 09-Jul-01 www.vishay.com 1 Application Note 826 Vishay Siliconix 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72609 Revision: 21-Jan-08 www.vishay.com 25 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000