SI2302CDS-T1-BE3

Si2302CDS www.vishay.com Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES SOT-23 (TO-236) • TrenchFET® power MOSFET D 3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Available 2 S APPLICATIONS • Load switching for portable devices 1 G Top View D • DC/DC converter Marking code: N2 PRODUCT SUMMARY G VDS (V) 20 RDS(on) max. () at VGS = 4.5 V 0.057 RDS(on) max. () at VGS = 2.5 V 0.075 Qg typ. (nC) ID (A) Configuration S 3.5 N-Channel MOSFET 2.9 Single ORDERING INFORMATION Package SOT-23 Lead (Pb)-free Si2302CDS-T1-E3 Lead (Pb)-free and halogen-free Si2302CDS-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL 5S STEADY STATE UNIT Drain-source voltage VDS 20 20 Gate-source voltage VGS ±8 ±8 2.9 2.6 2.3 2.1 IDM 10 10 IS 0.72 0.6 0.86 0.71 0.55 0.46 TJ, Tstg -55 to +150 -55 to +150 °C SYMBOL TYPICAL MAXIMUM UNIT 120 145 140 175 62 78 Continuous drain current (TJ = 150 °C) a TA = 25 °C TA = 70 °C Pulsed drain current b Continuous source current (diode conduction) a Power dissipation a TA = 25 °C TA = 70 °C Operating junction and storage temperature range ID PD V A W THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient a Maximum junction-to-foot t 5 s Steady state Steady state RthJA RthJF °C/W Notes a. Surface mounted on 1" x 1" FR4 board b. Pulse width limited by maximum junction temperature S12-2336-Rev. D, 01-Oct-12 Document Number: 68645 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2302CDS www.vishay.com Vishay Siliconix SPECIFICATIONS (TA = 25 °C, unless otherwise noted)  PARAMETER LIMITS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 20 - - VGS(th) VDS = VGS, ID = 250 μA 0.40 - 0.85 Gate-body leakage IGSS VDS = 0 V, VGS = ± 8 V - - ± 100 VDS = 20 V, VGS = 0 V - - 0.1 Zero gate voltage drain current IDSS VDS = 20 V, VGS = 0 V, TJ = 50 °C - - 4 VDS = 20 V, VGS = 0 V, TJ = 70 °C - - 15 VDS  10 V, VGS = 4.5 V 6 - - A VGS = 4.5 V, ID = 3.6 A - 0.045 0.057 VGS = 2.5 V, ID = 3.1 A - 0.056 0.075  Gate-threshold voltage On-state drain current a Drain-source on-resistance a ID(on) RDS(on) V nA μA Forward transconductance a gfs VDS = 5 V, ID = 3.6 A - 13 - S Diode forward voltage VSD IS = 0.95 A, VGS = 0 V - 0.7 1.2 V - 3.5 5.5 - 0.6 - - 0.45 - 2 4 8 - 8 15 - 7 15 - 30 45 - 7 15 - 8.5 15 - 2 4 Dynamic b Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg VDS = 10 V, VGS = 4.5 V, ID = 3.6 A f = 1 MHz nC  Switching Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) VDD = 10 V, RL = 2.78  ID  3.6 A, VGEN = 4.5 V, Rg = 1  tf Source-drain reverse recovery time trr Body diode reverse recovery charge Qrr IF = 3.6 A, di/dt = 100 A/μs ns nC Notes a. Pulse test: Pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing   Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S12-2336-Rev. D, 01-Oct-12 Document Number: 68645 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2302CDS www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 10 VGS = 5 V thru 2 V 8 VGS = 1.5 V I D - Drain Current (A) I D - Drain Current (A) 8 6 4 6 4 TC = 25 °C 2 2 TC = 125 °C VGS = 1 V TC = - 55 °C 0 0.0 0.5 1.0 1.5 VDS - Drain-to-Source Voltage (V) 0 0.0 2.0 0.4 1.2 1.6 2.0 Transfer Characteristics Output Characteristics 2.0 0.07 R DS(on) - On-Resistance (Ω) 1.6 I D - Drain Current (A) 0.8 VGS - Gate-to-Source Voltage (V) 1.2 0.8 TC = 25 °C 0.4 0.06 VGS = 2.5 V 0.05 VGS = 4.5 V 0.04 TC = 125 °C TC = - 55 °C 0.0 0.0 0.03 0.3 0.6 0.9 1.2 1.5 0 2 4 6 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) 10 On-Resistance vs. Drain Current Transfer Characteristics 5 400 ID = 3.6 A VGS - Gate-to-Source Voltage (V) Ciss 320 C - Capacitance (pF) 8 240 160 Coss 80 VDS = 10 V 4 VDS = 5 V 3 VDS = 15 V 2 1 Crss 0 0 0 5 10 15 20 0 1 2 3 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge S12-2336-Rev. D, 01-Oct-12 4 Document Number: 68645 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2302CDS www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.6 100 R DS(on) - On-Resistance (Normalized) VGS = 2.5 V, ID = 3.1 A 1.4 10 I S - Source Current (A) TJ = 150 °C 1.2 VGS = 4.5 V, ID = 3.6 A 1.0 1 0.1 0.8 TJ = 25 °C 0.01 0.6 - 50 - 25 0 25 50 75 100 125 TJ = - 55 °C 0.001 0.0 150 0.2 0.4 0.6 0.8 1.0 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1.2 0.2 0.12 R DS(on) - On-Resistance (Ω) 0.1 VGS(th) Variance (V) 0.10 0.08 TJ = 125 °C 0.06 0.0 - 0.1 ID = 1 mA - 0.2 ID = 250 µA TJ = 25 °C 0.04 0 1 2 3 4 VGS - Gate-to-Source Voltage (V) 5 - 0.3 - 50 - 25 0 25 50 75 10 Limited by RDS(on)* 10 150 100 µs 8 1 ms I D - Drain Current (A) Power (W) 125 Threshold Voltage On-Resistance vs. Gate-to-Source Voltage 6 4 1 10 ms 100 ms 0.1 1s 10 s 100 s, DC TA = 25 °C Single Pulse 2 TA = 25 °C 0 0.01 100 TJ - Temperature (°C) 0.1 1 10 Time (s) Single Pulse Power S12-2336-Rev. D, 01-Oct-12 100 BVDSS Limited 1000 0.01 0.1 100 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 68645 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2302CDS www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 70 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient                                             Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68645. S12-2336-Rev. D, 01-Oct-12 Document Number: 68645 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS Min INCHES Max Min Max 0.044 A 0.89 1.12 0.035 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 Document Number: 71196 09-Jul-01 www.vishay.com 1 Application Note 826 Vishay Siliconix 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72609 Revision: 21-Jan-08 www.vishay.com 25 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000