SI2302DDS-T1-BE3

Si2302DDS www.vishay.com Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES SOT-23 (TO-236) • TrenchFET® power MOSFET D 3 • 100 % Rg tested • Material categorization:  for definitions of compliance please see www.vishay.com/doc?99912 2 S APPLICATIONS D • Load switching for portable devices 1 G Top View • DC/DC converter Marking code: O2 G PRODUCT SUMMARY VDS (V) 20 RDS(on) max. () at VGS = 4.5 V 0.057 S RDS(on) max. () at VGS = 2.5 V 0.075 N-Channel MOSFET Qg typ. (nC) 3.5 ID (A) Configuration 2.9 Single ORDERING INFORMATION Package SOT-23 Lead (Pb)-free and halogen-free Si2302DDS-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL 5s STEADY STATE UNIT Drain-source voltage VDS 20 20 Gate-source voltage VGS ±8 ±8 2.9 2.6 2.3 2.1 IDM 10 10 IS 0.72 0.6 0.86 0.71 0.55 0.46 TJ, Tstg -55 to +150 -55 to +150 °C SYMBOL TYPICAL MAXIMUM UNIT 120 145 140 175 62 78 Continuous drain current (TJ = 150 °C) a TA = 25 °C TA = 70 °C Pulsed drain current (t = 300 μs) b Continuous source current (diode conduction) a Power dissipation a TA = 25 °C TA = 70 °C Operating junction and storage temperature range ID PD V A W THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient a Maximum junction-to-foot t5s Steady state Steady state RthJA RthJF °C/W Notes a. Surface mounted on 1" x 1" FR4 board b. Pulse width limited by maximum junction temperature S11-2528-Rev. A, 26-Dec-11 Document Number: 63653 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2302DDS www.vishay.com Vishay Siliconix SPECIFICATIONS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static VDS VGS = 0 V, ID = 250 μA 20 - - VGS(th) VDS = VGS, ID = 250 μA 0.40 - 0.85 Gate-body leakage IGSS VDS = 0 V, VGS = ± 8 V - - ± 100 Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source breakdown voltage Gate-threshold voltage - - 1 - - 75 VDS  10 V, VGS = 4.5 V 6 - - nA μA A VGS = 4.5 V, ID = 3.6 A - 0.045 0.057 VGS = 2.5 V, ID = 3.1 A - 0.056 0.075 gfs VDS = 5 V, ID = 3.6 A - 13 - S VSD IS = 0.95 A, VGS = 0 V - 0.7 1.2 V - 3.5 5.5 - 0.6 - - 0.45 - 2 4 8 - 8 15 - 7 15 - 30 45 - 7 15 - 8.5 15 - 2 4 Drain-source on-resistance a RDS(on) Forward transconductance a Diode forward voltage VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 70 °C V  Dynamic b Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg VDS = 10 V, VGS = 4.5 V, ID = 3.6 A f = 1 MHz nC  Switching Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) VDD = 10 V, RL = 2.78 , ID  3.6 A, VGEN = 4.5 V, Rg = 1  tf Source-drain reverse recovery time trr Body diode reverse recovery charge Qrr IF = 3.6 A, di/dt = 100 A/μs ns nC Notes a. Pulse test: Pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing   Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S11-2528-Rev. A, 26-Dec-11 Document Number: 63653 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2302DDS www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 10 VGS = 5 V thru 2 V 8 VGS = 1.5 V I D - Drain Current (A) I D - Drain Current (A) 8 6 4 6 4 TC = 25 °C 2 2 TC = 125 °C VGS = 1 V TC = - 55 °C 0 0.0 0.5 1.0 1.5 VDS - Drain-to-Source Voltage (V) 0 0.0 2.0 0.8 1.2 1.6 2.0 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Output Characteristics 2.0 0.07 R DS(on) - On-Resistance (Ω) 1.6 I D - Drain Current (A) 0.4 1.2 0.8 TC = 25 °C 0.4 0.06 VGS = 2.5 V 0.05 VGS = 4.5 V 0.04 TC = 125 °C TC = - 55 °C 0.0 0.0 0.3 0.6 0.9 1.2 0.03 1.5 VGS - Gate-to-Source Voltage (V) 0 4 6 ID - Drain Current (A) Transfer Characteristics On-Resistance vs. Drain Current 8 10 5 400 ID = 3.6 A VGS - Gate-to-Source Voltage (V) Ciss 320 C - Capacitance (pF) 2 240 160 Coss 80 VDS = 10 V 4 VDS = 5 V 3 VDS = 15 V 2 1 Crss 0 0 0 5 10 15 20 0 1 2 3 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge S11-2528-Rev. A, 26-Dec-11 4 Document Number: 63653 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2302DDS www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 VGS = 2.5 V, ID = 3.1 A 1.4 8 1.2 Power (W) R DS(on) - On-Resistance (Normalized) 1.6 VGS = 4.5 V, ID = 3.6 A 1.0 0.8 4 2 TA = 25 °C 0.6 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 1 Time (s) On-Resistance vs. Junction Temperature Single Pulse Power 100 1000 0.2 0.1 10 VGS(th) Variance (V) TJ = 150 °C 1 0.1 TJ = 25 °C 0.01 0.2 0.4 0.6 0.8 0.0 - 0.1 ID = 1 mA - 0.2 TJ = - 55 °C 0.001 0.0 ID = 250 µA 1.0 - 0.3 - 50 1.2 - 25 0 VSD - Source-to-Drain Voltage (V) 25 50 75 100 125 150 TJ - Temperature (°C) Threshold Voltage Source-Drain Diode Forward Voltage 10 Limited by RDS(on)* 0.12 100 µs 1 ms 0.10 I D - Drain Current (A) R DS(on) - On-Resistance (Ω) 10 TJ - Junction Temperature (°C) 100 I S - Source Current (A) 6 0.08 TJ = 125 °C 1 10 ms 100 ms 0.1 1s 10 s 100 s, DC TA = 25 °C Single Pulse 0.06 BVDSS Limited TJ = 25 °C 0.04 0 1 2 3 4 VGS - Gate-to-Source Voltage (V) 5 On-Resistance vs. Gate-to-Source Voltage S11-2528-Rev. A, 26-Dec-11 0.01 0.1 100 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 63653 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2302DDS www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 70 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient                                           Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63653. S11-2528-Rev. A, 26-Dec-11 Document Number: 63653 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS Min INCHES Max Min Max 0.044 A 0.89 1.12 0.035 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 Document Number: 71196 09-Jul-01 www.vishay.com 1 Application Note 826 Vishay Siliconix 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72609 Revision: 21-Jan-08 www.vishay.com 25 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000