SI2303CDS-T1-GE3

Si2303CDS Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.190 at VGS = - 10 V - 2.7 0.330 at VGS = - 4.5 V - 2.1 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.) 2 nC APPLICATIONS • Load Switch TO-236 (SOT-23) G 1 3 S D 2 Top View Si2303CDS (N3)* * Marking Code Ordering Information: Si2303CDS-T1-E3 (Lead (Pb)-free) Si2303CDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID IDM Pulsed Drain Current TC = 25 °C TA = 25 °C IS Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Continuous Source-Drain Diode Current Limit - 30 ± 20 - 2.7 - 2.2 V - 1.9b, c - 1.5b, c - 10 - 1.75 A - 0.83b, c -5 1.25 2.3 1.5 mJ 1.0b, c 0.7b, c - 55 to 150 TJ, Tstg Operating Junction and Storage Temperature Range Unit W °C THERMAL RESISTANCE RATINGS Parameter ≤5s Maximum Junction-to-Ambientb, d Steady State Maximum Junction-to-Foot (Drain) Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 160 °C/W. Document Number: 69991 S-83053-Rev. B, 29-Dec-08 Symbol RthJA RthJF Typical 80 35 Maximum 120 55 Unit °C/W www.vishay.com 1 Si2303CDS Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VDS = 0 V, ID = - 250 µA - 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = - 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V - 27 mV/°C 3.8 -1 -3 V ± 100 nA VDS = - 30 V, VGS = 0 V -1 VDS = - 30 V, VGS = 0 V, TJ = 55 °C - 10 VDS ≤ - 5 V, VGS = - 10 V - 10 µA A VGS = - 10 V, ID = - 1.9 A 0.158 0.190 VGS = - 4.5 V, ID = - 1.4 A 0.275 0.330 VDS = - 5 V, ID = - 1.9 A 2 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 155 VDS = - 15 V, VGS = 0 V, f = 1 MHz VDS = - 15 V, VGS = - 10 V, ID = - 1.9 A VDS = - 15 V, VGS = - 4.5 V, ID = - 1.9 A Fall Time Turn-On Delay Time 8 11 18 11 18 tf 8 16 td(on) 36 44 37 45 12 18 9 14 td(off) VDD = - 15 V, RL = 10 Ω ID = - 1.5 A, VGEN = - 10 V, RG = 1 Ω VDD = - 15 V, RL = 10 Ω ID ≅ - 1.5 A, VGEN = - 4.5 V, RG = 1 Ω tf Fall Time 0.6 17 tr Rise Time Turn-Off Delay Time 8 4 4 td(off) Turn-Off Delay Time 4 2 8.5 tr Rise Time pF nC 1 f = 1 MHz td(on) Turn-On Delay Time 35 25 1.7 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage IS TC = 25 °C - 1.75 ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb - 10 IS = - 1.5 A IF = - 1.5 A, di/dt = 100 A/µs, TJ = 25 °C A - 0.8 - 1.2 V 17 26 ns 9 14 nC 12 5 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 69991 S-83053-Rev. B, 29-Dec-08 Si2303CDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 1.0 VGS = 10 thru 5 V 0.8 I D - Drain Current (A) I D - Drain Current (A) 8 6 VGS = 4 V 4 2 0.6 0.4 TC = 125 °C 0.2 TC = 25 °C VGS = 3 V 0 TC = - 55 °C 0.0 0 1 2 3 4 5 0 1 VDS - Drain-to-Source Voltage (V) 3 4 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.5 300 0.4 240 VGS = 4.5 V C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 2 0.3 VGS = 10 V 0.2 Ciss 180 120 Coss 60 0.1 Crss 0 0 0 2 4 6 8 10 0 6 ID - Drain Current (A) 12 18 24 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.6 10 1.4 VDS = 15 V 6 VDS = 24 V 4 (Normalized) 8 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) ID = 1.9 A VGS = 10 V, ID = 1.9 A 1.2 VGS = 4.5 V, ID = 1.4 A 1.0 0.8 2 0 0 1 2 3 Qg - Total Gate Charge (nC) Gate Charge Document Number: 69991 S-83053-Rev. B, 29-Dec-08 4 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si2303CDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.5 10 TJ = 150 °C TJ = 25 °C 1 0.1 0.0 0.4 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 1.9 A 0.3 TJ = 125 °C 0.2 0.1 TJ = 25 °C 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 4 8 12 16 20 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 6 2.2 5 2.0 4 Power (W) V GS(th) (V) ID = 250 µA 1.8 3 2 1.6 1 1.4 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 1 10 100 1000 Time (s) TJ - Temperature (°C) Single Pulse Power Threshold Voltage 10 I D - Drain Current (A) Limited by RDS(on)* 100 µs 1 1 ms 10 ms 0.1 100 ms 1 s, 10 s DC TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 69991 S-83053-Rev. B, 29-Dec-08 Si2303CDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3.0 I D - Drain Current (A) 2.4 1.8 1.2 0.6 0.0 0 25 50 75 100 125 150 0 25 TC - Case Temperature (°C) 3.0 1.0 2.4 0.8 1.8 0.6 Power (W) Power (W) Current Derating* 1.2 0.6 0.4 0.2 0.0 0.0 0 25 50 75 100 125 150 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 69991 S-83053-Rev. B, 29-Dec-08 www.vishay.com 5 Si2303CDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 104 °C/W 0.02 3. TJM - T A = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69991. www.vishay.com 6 Document Number: 69991 S-83053-Rev. B, 29-Dec-08 Package Information Vishay Siliconix SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS Min INCHES Max Min Max 0.044 A 0.89 1.12 0.035 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 Document Number: 71196 09-Jul-01 www.vishay.com 1 Application Note 826 Vishay Siliconix 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72609 Revision: 21-Jan-08 www.vishay.com 25 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000