Si2305DS
Vishay Siliconix
P-Channel 1.25-W, 1.8-V (G-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)
0.052 at VGS = - 4.5 V
± 3.5
-8
0.071 at VGS = - 2.5 V
±3
0.108 at VGS = - 1.8 V
±2
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFETs: 1.8 V Rated
TO-236
(SOT-23)
G
1
3
S
D
2
Top View
Si2305DS (A5)*
* Marking Code
Ordering Information: Si2305DS-T1
Si2305DS-T1-E3 (Lead (Pb)-free)
Si2305DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
-8
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a, b
Maximum Power Dissipationa, b
TA = 25 °C
TA = 70 °C
V
± 3.5
ID
± 2.8
IDM
± 12
IS
- 1.6
A
1.25
PD
W
0.8
TJ, Tstg
Operating Junction and Storage Temperature Range
Unit
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Symbol
t≤5s
Steady State
RthJA
Typical
Maximum
100
130
Unit
°C/W
Notes:
a. Surface Mounted on FR4 board.
b. t ≤ 5 s.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 70833
S09-0133-Rev. E, 02-Feb-09
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Si2305DS
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Limits
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS = 0 V, ID = - 10 µA
-8
VGS(th)
VDS = VGS, ID = - 250 µA
- 0.45
IGSS
VDS = 0 V, VGS = ± 8 V
± 100
VDS = - 8 V, VGS = 0 V
-1
VDS = - 8 V, VGS = 0 V, TJ = 55 °C
- 10
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source
On-Resistancea
RDS(on)
VDS ≤ - 5 V, VGS = - 4.5 V
-6
VDS ≤ - 5 V, VGS = - 2.5 V
-3
- 0.8
0.044
0.052
VGS = - 2.5 V, ID = - 3 A
0.060
0.071
VGS = - 1.8 V, ID = - 2 A
0.087
0.108
8.5
gfs
VDS = - 5 V, ID = - 3.5 A
Diode Forward Voltage
VSD
IS = - 1.6 A, VGS = 0 V
nA
µA
A
VGS = - 4.5 V, ID = - 3.5 A
Forward Transconductancea
V
Ω
S
- 1.2
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
10
VDS = - 4 V, VGS = - 4.5 V, ID ≅ - 3.5 A
Gate-Drain Charge
Qgd
2
Input Capacitance
Ciss
1245
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = - 4 V, VGS = 0 V, f = 1 MHz
15
nC
2
pF
375
210
b
Switching
Turn-On Time
Turn-Off Time
td(on)
tr
td(off)
VDD = - 4 V, RL = 4 Ω
ID ≅ - 1.0 A, VGEN = - 4.5 V, RG = 6 Ω
tf
13
20
25
40
55
80
19
35
ns
Notes:
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW ≤ 300 µs, duty cycle ≤ 2 %.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 70833
S09-0133-Rev. E, 02-Feb-09
Si2305DS
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwse noted
12
12
VGS = 4.5 thru 2.5 V
TC = - 55 °C
2V
10
10
I D - Drain Current (A)
I D - Drain Current (A)
25 °C
8
6
1.5 V
4
8
125 °C
6
4
2
2
1 V, 0.5 V
0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
4.0
0.5
1.5
2.0
2.5
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.30
2000
0.25
1600
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
1.0
0.20
0.15
VGS = 1.8 V
0.10
VGS = 2.5 V
Ciss
1200
800
Coss
400
0.05
Crss
VGS = 4.5 V
0
0
0
2
4
6
8
10
12
0
4
6
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
5
8
1.4
VDS = 4 V
ID = 3.5 A
VGS = 4.5 V
ID = 3.5 A
4
3
2
1.2
(Normalized)
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
2
1.0
0.8
1
0
0
2
4
6
Qg - T otal Gate Charge (nC)
Gate Charge
Document Number: 70833
S09-0133-Rev. E, 02-Feb-09
8
10
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si2305DS
Vishay Siliconix
30
0.5
10
0.4
TJ = 150 °C
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
TYPICAL CHARACTERISTICS 25 °C, unless otherwse noted
TJ = 25 °C
1
0.3
0.2
ID = 3.5 A
0.1
0
0.1
0
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
0
1.2
2
4
6
8
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.4
12
10
0.3
0.2
8
Power (W)
VGS(th) Variance (V)
ID = 250 µA
0.1
0.0
6
4
TA = 25 °C
- 0.1
2
- 0.2
- 50
- 25
0
25
50
75
100
TJ - Temperature (°C)
125
150
0
0.01
1
0.1
10
100
500
Time (s)
Single Pulse Power
Threshold Voltage
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
PDM
0.1
0.1
t1
t2
1. Duty Cycle, D =
0.05
t1
t2
2. Per Unit Base = R thJA = 130 °C/W
0.02
3. T JM - T A = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (s)
10
100
500
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70833.
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Document Number: 70833
S09-0133-Rev. E, 02-Feb-09
Legal Disclaimer Notice
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Revision: 01-Jan-2022
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Document Number: 91000