SI2306BDS-T1-E3

Si2306BDS Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.047 at VGS = 10 V 4.0 0.065 at VGS = 4.5 V 3.5 • Halogen-free Option Available • TrenchFET® Power MOSFET • 100 % Rg Tested Qg (Typ.) 3.0 RoHS COMPLIANT TO-236 (SOT-23) G 1 3 S D 2 Top View Si2306BDS (L6 )* * Marking Code Ordering Information: Si2306BDS-T1-E3 (Lead (Pb)-free) Si2306BDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a, b IS TA = 25 °C TA = 70 °C PD 3.16 3.5 2.7 20 1.04 0.62 1.25 0.75 0.8 0.48 TJ, Tstg Operating Junction and Storage Temperature Range V 4.0 IDM Pulsed Drain Current Maximum Power Dissipationa, b ID Unit - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t≤5s Steady State Steady State RthJA RthJF Typical Maximum 80 100 130 166 60 75 Unit °C/W Notes: a. Surface Mounted on FR4 board, t ≤ 5 s. b. Pulse width limited by maximum junction temperature. c. Surface Mounted on FR4 board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 73234 S-80642-Rev. B, 24-Mar-08 www.vishay.com 1 Si2306BDS Vishay Siliconix SPECIFICATIONS TA = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS 30 1.0 Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 °C VDS ≥ 4.5 V, VGS = 10 V VGS = 10 V, ID = 3.5 A VGS = 4.5 V, ID = 2.8 A VDS = 4.5 V, ID = 2.5 A IS = 1.25 A, VGS = 0 V Drain-Source On-Resistancea RDS(on) gfs Forward Transconductancea VSD Diode Forward Voltage Dynamic Qg Gate Charge Qgt Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Rg Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time trr Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge Notes: a. Pulse test: Pulse width ≤ 300 µs, duty cycle ≤ 2 %. Limits Typ. Unit Max. V 3.0 ± 100 0.5 10 nA µA 6 A VDS = 15 V, VGS = 5 V, ID = 2.5 A VDS = 15 V, VGS = 10 V, ID = 2.5 A f = 1.0 MHz 2.5 VDS = 15 V, VGS = 0 V, f = 1 MHz VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω IF = 1.25 A, di/dt = 100 A/µs 0.038 0.052 7.0 0.8 0.047 0.065 3.0 6 1.6 0.6 5 305 65 29 4.5 9 7 12 14 6 14 6 11 18 25 10 21 10 Ω S V 1.2 nC Ω 7.5 pF ns nC Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 20 VGS = 10 thru 5 V 16 4V I D - Drain Current (A) I D - Drain Current (A) 16 12 8 12 8 TC = 125 °C 4 4 25 °C 3V - 55 °C 0 0 www.vishay.com 2 1 2 3 4 5 6 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 4.0 4.5 Document Number: 73234 S-80642-Rev. B, 24-Mar-08 Si2306BDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.10 400 Ciss 300 0.06 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 350 0.08 VGS = 4.5 V VGS = 10 V 0.04 250 200 150 100 Coss 0.02 Crss 50 0.00 0 0 2 4 6 8 10 12 14 16 0 15 20 25 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Capacitance 30 1.6 VDS = 15 V ID = 3.5 A VGS = 10 V ID = 3.5 A 8 6 4 (Normalized) 1.4 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 10 On-Resistance vs. Drain Current 10 2 1.2 1.0 0.8 0 0 1 2 3 4 5 0.6 - 50 6 0 25 50 75 100 125 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 0.5 R DS(on) - On-Resistance (Ω) TJ = 150 °C TJ = 25 °C 1 0.1 0.0 - 25 Qg - Total Gate Charge (nC) 10 I S - Source Current (A) 5 0.4 ID = 3.5 A 0.3 0.2 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 73234 S-80642-Rev. B, 24-Mar-08 10 www.vishay.com 3 Si2306BDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 10 0.2 8 0.0 - 0.2 TA = 25 °C Single Pulse 6 Power (W) V GS(th) Variance (V) ID = 250 µA 4 - 0.4 2 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 0 0.01 150 1 0.1 10 100 600 Time (s) Threshold Voltage Single Pulse Power 100 Limited by RDS(on)* IDM Limited 10 µs I D - Drain Current (A) 10 100 µs 1 1 ms 10 ms TA = 25 °C Single Pulse 0.1 100 ms DC, 100 s, 10 s, 1 s 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 130 °C/W 3. T JM - T A = PDMZthJA(t) Single Pulse 0.01 10- 4 10- 3 4. Surface Mounted 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73234. www.vishay.com 4 Document Number: 73234 S-80642-Rev. B, 24-Mar-08 Package Information Vishay Siliconix SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS Min INCHES Max Min Max 0.044 A 0.89 1.12 0.035 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 Document Number: 71196 09-Jul-01 www.vishay.com 1 Application Note 826 Vishay Siliconix 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72609 Revision: 21-Jan-08 www.vishay.com 25 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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