Si2307BDS
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)b
0.078 at VGS = - 10 V
- 3.2
0.130 at VGS = - 4.5 V
- 2.5
VDS (V)
- 30
• Halogen-free Option Available
• TrenchFET® Power MOSFET
RoHS
COMPLIANT
TO-236
(SOT-23)
G
1
3
S
D
2
Top View
Si2307BDS (L7)*
* Marking Code
Ordering Information: Si2307BDS-T1-E3 (Lead (Pb)-free)
Si2307BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
VDS
- 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)b
TA = 25 °C
TA = 70 °C
Pulsed Drain Currenta
Operating Junction and Storage Temperature Range
IS
TA = 25 °C
TA = 70 °C
PD
V
- 3.2
- 2.5
- 2.6
- 2.0
IDM
Continuous Source Current (Diode Conduction)b
Power Dissipationb
ID
- 12
- 1.25
- 0.75
1.25
0.75
0.8
0.48
TJ, Tstg
Unit
- 55 to 150
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum
Junction-to-Ambientb
Maximum Junction-to-Ambientc
Symbol
RthJA
Typical
Maximum
80
100
130
166
Unit
°C/W
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 board, t ≤ 5 s.
c. Surface Mounted on FR4 board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 72699
S-80427-Rev. C, 03-Mar-08
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1
Si2307BDS
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Limits
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
VDS
VGS = 0 V, ID = - 10 µA
- 30
VGS(th)
VDS = VGS, ID = - 250 µA
- 1.0
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
VDS = - 30 V, VGS = 0 V
-1
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
- 10
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-Resistancea
RDS(on)
VDS ≤ - 10 V, VGS = - 10 V
- 3.0
-6
V
nA
µA
A
VGS = - 10 V, ID = - 3.2 A
0.063
0.078
VGS = - 4.5 V, ID = - 2.5 A
0.105
0.130
Forward Transconductancea
gfs
VDS = - 10 V, ID = - 3.2 A
5.0
Diode Forward Voltage
VSD
IS = - 0.75 A, VGS = 0 V
- 0.85
- 1.2
9.0
15
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = - 15 V, VGS = - 10 V
ID ≅ - 1.7 A
f = 1.0 MHz
nC
1.4
2.4
Ω
8.0
380
VDS = - 15 V, VGS = 0 V, f = 1 MHz
pF
100
75
Switchingc
Turn-On Time
Turn-Off Time
td(on)
tr
td(off)
tf
VDD = - 15 V, RL = 15 Ω
ID ≅ - 1.0 A, VGEN = - 4.5 V
Rg = 6 Ω
9
20
12
20
25
40
14
21
ns
Notes:
a. Pulse test: pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 72699
S-80427-Rev. C, 03-Mar-08
Si2307BDS
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
12
12
VGS = 10 thru 5 V
10
4V
I D - Drain Current (A)
I D - Drain Current (A)
10
8
6
4
6
4
TC = 125 °C
25 °C
3V
2
8
2
- 55 °C
2V
0
0
2
4
6
8
0
0.0
10
0.5
1.0
VDS - Drain-to-Source Voltage (V)
2.0
2.5
3.0
3.5
4.0
4.5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
700
0.30
600
C - Capacitance (pF)
0.25
R DS(on) - On-Resistance (Ω)
1.5
0.20
0.15
VGS = 4.5 V
0.10
VGS = 10 V
500
Ciss
400
300
200
0.05
100
0.00
0
Coss
Crss
0
2
4
6
8
0
10
10
15
20
25
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
30
1.6
10
VGS = 10 V
ID = 3.2 A
VDS = 15 V
ID = 3 A
1.4
8
R DS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
5
6
4
1.2
1.0
0.8
2
0
0
2
4
6
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 72699
S-80427-Rev. C, 03-Mar-08
8
10
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si2307BDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.6
10
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
0.5
TJ = 150 °C
0.4
0.3
ID = 3.2 A
0.2
0.1
TJ = 25 °C
0.0
1
0
0.2
0.4
0.6
0.8
1.0
0
1.2
2
6
8
10
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.3
10
0.2
8
ID = 250 µA
0.1
Power (W)
VGS(th) Variance (V)
4
0.0
6
4
- 0.1
- 0.3
- 50
TA = 25 °C
2
- 0.2
0
- 25
0
25
50
75
100
125
150
0.01
0.1
1
TJ - Temperature (°C)
10
100
1000
Time (s)
Threshold Voltage
Single Pulse Power
100
Limited by R DS(on)*
I D - Drain Current (A)
10
10 µs
100 µs
1 ms
1
10 ms
100 ms
0.1
10 s, 1 s
DC, 100 s
0.01
TA = 25 °C
Single Pulse
0.001
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum V GS at which R DS(on) is specified
Square Wave Pulse Duration (s)
Safe Operating Area, Junction-to-Case
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Document Number: 72699
S-80427-Rev. C, 03-Mar-08
Si2307BDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 62.5 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72699.
Document Number: 72699
S-80427-Rev. C, 03-Mar-08
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Package Information
Vishay Siliconix
SOT-23 (TO-236): 3-LEAD
b
3
E1
1
E
2
e
S
e1
D
0.10 mm
C
0.004"
A2
A
C
q
Gauge Plane
Seating Plane
Seating Plane
C
A1
Dim
0.25 mm
L
L1
MILLIMETERS
Min
INCHES
Max
Min
Max
0.044
A
0.89
1.12
0.035
A1
0.01
0.10
0.0004
0.004
A2
0.88
1.02
0.0346
0.040
b
0.35
0.50
0.014
0.020
c
0.085
0.18
0.003
0.007
D
2.80
3.04
0.110
0.120
E
2.10
2.64
0.083
0.104
E1
1.20
1.40
0.047
e
0.95 BSC
e1
L
1.90 BSC
0.40
L1
q
0.0748 Ref
0.60
0.016
0.64 Ref
S
0.024
0.025 Ref
0.50 Ref
3°
0.055
0.0374 Ref
0.020 Ref
8°
3°
8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
Document Number: 71196
09-Jul-01
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Application Note 826
Vishay Siliconix
0.049
(1.245)
0.029
0.022
(0.559)
(0.724)
0.037
(0.950)
(2.692)
0.106
RECOMMENDED MINIMUM PADS FOR SOT-23
0.053
(1.341)
0.097
(2.459)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index Return to Index
APPLICATION NOTE
Document Number: 72609
Revision: 21-Jan-08
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25
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Revision: 01-Jan-2022
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Document Number: 91000