SI2308CDS-T1-GE3

Si2308CDS www.vishay.com Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES SOT-23 (TO-236) • TrenchFET® Gen IV power MOSFET • 100 % Rg tested D 3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 S APPLICATIONS D • Battery switch 1 G Top View • DC/DC converter • Load switch G Marking code: G3 PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) ID (A) d Configuration 60 0.144 0.200 1.05 2.6 Single S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free SOT-23 Si2308CDS-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) LIMIT 60 ± 20 2.6 2.1 1.9 a, b 1.5 a, b 6 1.3 0.72 a, b 4 0.8 1.6 1 0.9 a, b 0.6 a, b -55 to +150 ID IDM Continuous source-drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range PD TJ, Tstg UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient a, c Maximum junction-to-foot (drain) t ≤ 10 s Steady state SYMBOL RthJA RthJF TYPICAL 120 62 MAXIMUM 145 78 UNIT °C/W Notes a. Surface mounted on 1" x 1" FR4 board b. t = 10 s c. Maximum under steady state conditions is 175 °C/W d. TC = 25 °C S17-0939-Rev. A, 19-Jun-17 Document Number: 77744 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2308CDS www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 60 - - V - 40 - - -4.5 - Static Drain-source breakdown voltage VDS temperature coefficient ΔVDS/TJ VGS(th) temperature coefficient ΔVGS(th)/TJ Gate-source threshold voltage ID = 250 μA mV/°C VGS(th) VDS = VGS, ID = 250 μA 1 - 3 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = 60 V, VGS = 0 V - - 1 VDS = 60 V, VGS = 0 V, TJ = 70 °C - - 10 VDS ≤ 10 V, VGS = 10 V 6 - - VGS = 10 V, ID = 1.9 A - 0.120 0.144 VGS = 4.5 V, ID = 1.5 A - 0.160 0.200 VDS = 30 V, ID = 1.9 A - 3.2 - - 105 - - 55 - - 7 - - 2 4 μA A Ω S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = 30 V, VGS = 0 V, f = 1 MHz VDS = 30 V, VGS = 10 V, ID = 1.9 A - 1.05 2.1 VDS = 30 V, VGS = 4.5 V, ID = 1.9 A - 0.62 - - 0.17 - f = 1 MHz 0.3 1.5 3 - 8 16 - 5 10 - 11 20 tf - 3 6 td(on) - 23 35 - 25 40 - 10 20 - 16 30 td(on) tr td(off) tr td(off) VDD = 30 V, RL = 20 Ω, ID ≅ 1.5 A, VGEN = 10 V, Rg = 1 Ω VDD = 30 V, RL = 20 Ω, ID ≅ 1.5 A, VGEN = 4.5 V, Rg = 1 Ω tf pF nC Ω ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD TC = 25 °C IS = 1.5 A, VGS = 0 V - - 1.7 - - 4 - 0.85 1.2 A V Body diode reverse recovery time trr - 15 30 ns Body diode reverse recovery charge Qrr - 53 80 nC Reverse recovery fall time ta - 27 - Reverse recovery rise time tb - 17 - IF = 1.5 A, di/dt = 100 A/μs, TJ = 25 °C ns Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-0939-Rev. A, 19-Jun-17 Document Number: 77744 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2308CDS www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 6 6 VGS = 10 V thru 7 V 5 2nd line ID - Drain Current (A) VGS = 4 V 4 3 2 1 TC = 125 °C 4 3 TC = 25 °C 2 1 VGS = 3 V 0 TC = -55 °C 0 0 1 2 3 4 0 1 2 5 Output Characteristics Transfer Characteristics Axis Title Axis Title 150 10000 0.25 10000 VGS = 4.5 V 0.15 VGS = 10 V 0.01 100 Ciss 1000 90 1st line 2nd line 1000 0.20 2nd line C - Capacitance (pF) 120 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 4 VGS - Gate-to-Source Voltage (V) 2nd line 0.30 60 Coss 30 0.05 0 10 0 1 2 3 4 5 Crss 10 0 15 30 45 ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current and Gate Voltage Capacitance Axis Title Axis Title VDS = 30 V VDS = 15 V 1000 1st line 2nd line 6 VDS = 48 V 4 100 2 0 10 0 0.6 1.2 1.8 2.4 2nd line RDS(on) - On-Resistance (Normalized) 8 60 1.6 10000 ID = 1.9 A 100 0 6 10 2nd line VGS - Gate-to-Source Voltage (V) 3 VDS - Drain-to-Source Voltage (V) 2nd line 10000 VGS = 10 V, ID = 1.9 A 1.4 1000 1.2 VGS = 4.5 V, I D = 1.5 A 1.0 100 0.8 0.6 10 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (°C) 2nd line Gate Charge On-Resistance vs. Junction Temperature S17-0939-Rev. A, 19-Jun-17 1st line 2nd line 2nd line ID - Drain Current (A) 5 Document Number: 77744 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2308CDS www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 1000 1 TJ = 25 °C 100 0.1 0.01 0.3 0.6 0.9 1.2 1000 TJ = 150 °C 0.2 TJ = 25 °C 100 0.1 0 10 0 0.3 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 10 TJ = 150 °C 10000 0.4 1st line 2nd line 2nd line IS - Source Current (A) 100 10 1.5 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title 2.5 10 10000 ID = 250 μA 2.3 8 Power(W) 1st line 2nd line 2nd line VGS(th) (V) 1000 2.1 1.9 6 4 100 1.7 2 1.5 10 -50 -25 0 25 50 75 TA =25 °C 0 0.01 100 125 150 0.1 TJ - Temperature (°C) 2nd line 1 10 100 1000 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient Axis Title IDM limited 10 10000 100 μs 1 1000 1 ms 10 ms 0.1 100 ms 1st line 2nd line 2nd line ID - Drain Current (A) Limited by RDS(on) (1) 10s, 100 1s DC 0.01 TA = 25 °C single pulse BVDSS limited 0.001 0.1 (1) 1 10 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S17-0939-Rev. A, 19-Jun-17 Document Number: 77744 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2308CDS www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 3.0 1000 2.0 1st line 2nd line 2nd line ID - Drain Current (A) 2.5 1.5 1.0 100 0.5 0 10 0 25 50 75 100 125 150 TC - Case Temperature (°C) 2nd line Current Derating a Axis Title Axis Title 10000 2.0 0.90 10000 0.72 1.5 0.54 1st line 2nd line 1.0 2nd line Power (W) 1000 1st line 2nd line 2nd line Power (W) 1000 0.36 100 0.5 100 0.18 0 10 0 25 50 75 100 125 150 0 10 0 25 50 75 100 125 TC - Case Temperature (°C) 2nd line TA - Ambient Temperature (°C) 2nd line Power, Junction-to-Case Power, Junction-to-Ambient 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S17-0939-Rev. A, 19-Jun-17 Document Number: 77744 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2308CDS www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty cycle, D = 0.02 t1 t2 2. Per unit base = R thJF = 50 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface mounted Single pulse 0.01 10-4 10 -3 -2 -1 10 10 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?77744. S17-0939-Rev. A, 19-Jun-17 Document Number: 77744 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS Min INCHES Max Min Max 0.044 A 0.89 1.12 0.035 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 Document Number: 71196 09-Jul-01 www.vishay.com 1 PAD Pattern www.vishay.com Vishay Siliconix Recommended Minimum PADs for PowerPAK® 8 x 8L Single 8.00 (0.31) 0.50 (0.02) 4.05 (0.16) 3.55 (0.14) Y 3.99 (0.16) 4.59 (0.18) 6.90 (0.27) (0, 0) 0.44 (0.02) X 0.54 (0.02) 0.85 (0.03) 6.11 (0.24) 1.29 (0.05) 1.94 (0.08) 8.25 (0.32) 3.23 (0.13) 0.82 (0.03) 2.47 (0.10) 3.62 (0.14) 4.05 (0.16) 2.03 (0.08) 1.15 (0.05) 0.88 (0.03) Dimensions in millimeters (inches) Note • Linear dimensions are in black, the same information is provided in ordinate dimensions which are in blue. Revision: 08-Apr-15 1 Document Number: 67477 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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