SI2308DS

Si2308DS Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg Tested ID (A) 0.16 at VGS = 10 V 2.0 0.22 at VGS = 4.5 V 1.7 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2308DS (A8)* * Marking Code Ordering Information: Si2308DS-T1 Si2308DS-T1-E3 (Lead (Pb)-free) Si2308DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Pulsed Drain Currentb IDM Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa ID IS TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range PD Unit V 2.0 1.6 10 A 1.0 1.25 0.80 W TJ, Tstg - 55 to 150 °C Symbol Maximum Unit THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Ambientc RthJA 100 166 °C/W Notes: a. Surface Mounted on FR4 board, t ≤ 5 s. b. Pulse width limited by maximum junction temperature. c. Surface Mounted on FR4 board. For SPICE model information via the Worldwide Web: www.vishay.com/www/product/spice.htm * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 70797 S09-0133-Rev. D, 02-Feb-09 www.vishay.com 1 Si2308DS Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VDS = 0 V, ID = 250 µA 60 VGS(th) VDS = VGS, ID = 250 µA 1.5 IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = 60 V, VGS = 0 V 0.5 VDS = 60 V, VGS = 0 V, TJ = 55 °C 10 Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage a VDS ≥ 4.5 V, VGS = 10 V 6 VDS ≥ 4.5 V, VGS = 4.5 V 4 3.0 nA µA A VGS = 10 V, ID = 2.0 A 0.125 0.16 VGS = 4.5 V, ID = 1.7 A 0.155 0.22 gfs VDS = 4.5 V, ID = 2.0 A 4.6 VSD IS = 1 A, VGS = 0 V 0.77 1.2 4.8 10 RDS(on) V Ω S V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 30 V, VGS = 10 V, ID = 2.0 A nC 0.8 1.0 0.5 3.3 Ω 240 VDS = 25 V, VGS = 0 V, f = 1 MHz pF 50 15 Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf VDD = 30 V, RL = 30 Ω ID ≅ 1 A, VGEN = 4.5 V, Rg = 6 Ω 7 15 10 20 17 35 6 15 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 70797 S09-0133-Rev. D, 02-Feb-09 Si2308DS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 12 12 VGS = 10 thru 5 V I D - Drain Current (A) I D - Drain Current (A) 9 4V 6 3 9 6 3 TC = 125 °C 25 °C 3V - 55 °C 1 V, 2 V 0 0 0 2 4 6 8 10 0 1 VDS - Drain-to-Source Voltage (V) 3 4 5 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Output Characteristics 1.0 400 0.8 300 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 2 0.6 0.4 200 Coss 100 VGS = 4.5 V 0.2 Ciss Crss VGS = 10 V 0 0.0 0 3 6 9 0 12 6 12 24 30 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 2.0 10 VDS = 30 V ID = 2.0 A 1.8 8 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 18 6 4 VGS = 10 V ID = 2.0 A 1.6 1.4 1.2 1.0 2 0.8 0 0 1 2 3 Qg - Total Gate Charge (nC) Gate Charge Document Number: 70797 S09-0133-Rev. D, 02-Feb-09 4 5 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si2308DS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 10 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.5 TJ = 150 °C 0.4 0.3 ID = 2.0 A 0.2 0.1 TJ = 25 °C 1 0.0 0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 0 1.2 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.4 12 ID = 250 µA 0.2 Power (W) VGS(th) Variance (V) 9 0.0 - 0.2 6 - 0.4 3 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 150 0 0.01 0.1 1 Time (s) 100 10 Single Pulse Power Threshold Voltage 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 500 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70797. www.vishay.com 4 Document Number: 70797 S09-0133-Rev. D, 02-Feb-09 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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