SI2309CDS-T1-BE3

New Product Si2309CDS Vishay Siliconix P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.345 at VGS = - 10 V - 1.6 0.450 at VGS = - 4.5 V - 1.4 VDS (V) - 60 Qg (Typ.) 2.7 nC APPLICATIONS • Load Switch TO-236 (SOT-23) G 1 3 S • Halogen-free Option Available • TrenchFET® Power MOSFET D S 2 G Top View Si2309CDS (N9)* * Marking Code D Ordering Information: Si2309CDS-T1-E3 (Lead (Pb)-free) Si2309CDS-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS - 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a, b TC = 25 °C - 1.6 TC = 70 °C - 1.3 TA = 25 °C ID Single Pulse Avalanche Current L = 0.1 mH Continuous Source-Drain Diode Current Maximum Power Dissipation TC = 25 °C TA = 25 °C - 1.0a, b IDM -8 IAS -5 - 0.9a, b 1.7 TC = 70 °C 1.1 PD Soldering Recommendations (Peak W 1.0a, b 0.67a, b TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range A - 1.4 IS TC = 25 °C TA = 25 °C V - 1.2a, b TA = 70 °C Pulsed Drain Current (10 µs Pulse Width) Unit - 55 to 150 Temperature)c °C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Foot (Drain) Symbol Typical Maximum t≤5s RthJA 92 120 Steady State RthJF 58 73 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 5 s. c. Maximum under Steady State conditions is 166 °C/W. d. When TC = 25 °C. Document Number: 68980 S-82584-Rev. A, 27-Oct-08 www.vishay.com 1 New Product Si2309CDS Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 60 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = - 250 µA VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea gfs mV/°C 4.5 -1 -3 V - 100 nA VDS = - 60 V, VGS = 0 V -1 VDS = - 60 V, VGS = 0 V, TJ = 55 °C - 10 VDS ≤ 5 V, VGS = - 10 V RDS(on) V - 65 -6 µA A VGS = - 10 V, ID = - 1.25 A 0.285 0.345 VGS = - 4.5 V, ID = - 1.0 A 0.360 0.450 VDS = - 10 V, ID = - 1.0 A 2.8 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 20 Total Gate Charge Qg 2.7 Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 210 VDS = - 30 V, VGS = 0 V, f = 1 MHz VDS = - 30 V, VGS = - 4.5 V, ID = - 1.25 A pF 28 4.1 0.8 nC 1.2 f = 1 MHz td(on) VDD = - 30 V, RL = 30 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 1 Ω tr td(off) Ω 7 40 60 35 55 15 25 tf 10 20 td(on) 5 10 10 20 VDD = - 30 V, RL = 30 Ω ID ≅ - 1 A, VGEN = - 10 V, Rg = 1 Ω tr td(off) tf 15 25 10 20 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current TC = 25 °C IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb - 1.4 -8 IS = - 0.75 A, VGS = 0 V IF = - 1.25 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.8 - 1.2 V 30 60 ns 33 60 nC 18 12 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 68980 S-82584-Rev. A, 27-Oct-08 New Product Si2309CDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.0 8 1.5 6 I D - Drain Current (A) I D - Drain Current (A) VGS = 10 thru 5 V VGS = 4 V 4 1.0 TC = 25 °C 0.5 2 VGS = 3 V TC = 125 °C TC = - 55 °C 0.0 0 0 1 2 3 4 0 5 1 VDS - Drain-to-Source Voltage (V) 3 4 5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 350 0.8 280 0.6 VGS = 4.5 V 0.4 Ciss C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 2 VGS = 10 V 210 140 0.2 70 Coss Crss 0 0.0 0 2 4 6 0 8 15 ID - Drain Current (A) 45 60 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 2.0 ID = 1.25 A ID = 1.25 A VDS = 30 V 1.7 VDS = 15 V 6 4 VDS = 45 V 2 VGS = 10 V (Normalized) 8 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 30 1.4 VGS = 4.5 V 1.1 0.8 0 0 1 2 3 Qg - Total Gate Charge (nC) Gate Charge Document Number: 68980 S-82584-Rev. A, 27-Oct-08 4 5 0.5 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product Si2309CDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 2.0 ID = 1.25 A TJ = 150 °C TJ = 25 °C 1 1.6 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 0.1 TJ = - 50 °C 1.2 0.8 TJ = 125 °C 0.01 0.4 0.001 0.0 0.0 TJ = 25 °C 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.6 8 ID = 250 µA TA = 25 °C 0.4 ID = 1 mA 0.2 Power (W) VGS(th) Variance (V) 6 0.0 4 2 - 0.2 - 0.4 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 1 10 100 1000 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 10 10 µs I D - Drain Current (A) Limited by RDS(on)* 1 100 µs 1 ms 10 ms 0.1 100 ms TA = 25 °C Single Pulse 0.01 0.1 1 s, 10 s 100 s, DC 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 68980 S-82584-Rev. A, 27-Oct-08 New Product Si2309CDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 166 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 4. Surface Mounted 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 73 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68980. Document Number: 68980 S-82584-Rev. A, 27-Oct-08 www.vishay.com 5 Package Information Vishay Siliconix SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS Min INCHES Max Min Max 0.044 A 0.89 1.12 0.035 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 Document Number: 71196 09-Jul-01 www.vishay.com 1 Application Note 826 Vishay Siliconix 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72609 Revision: 21-Jan-08 www.vishay.com 25 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000