Si2311DS
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)
0.045 at VGS = - 4.5 V
- 3.5
-8
0.072 at VGS = - 2.5 V
- 2.8
0.120 at VGS = - 1.8 V
- 2.0
• Halogen-free Option Available
• TrenchFET® Power MOSFET
RoHS
APPLICATIONS
COMPLIANT
• Load Switch
TO-236
(SOT-23)
G
1
S
2
3
D
Top View
Si2311DS (C1)*
* Marking Code
Ordering Information: Si2311DS-T1-E3 (Lead (Pb)-free)
Si2311DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
VDS
-8
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a, b
TA = 25 °C
TA = 70 °C
Continuous Source Current (Diode Conduction)a, b
IS
TA = 25 °C
TA = 70 °C
PD
- 3.0
- 2.8
- 2.4
- 10
- 0.8
A
- 0.6
0.96
0.71
0.62
0.46
TJ, Tstg
Operating Junction and Storage Temperature Range
V
- 3.5
IDM
Pulsed Drain Current
Maximum Power Dissipationa, b
ID
Unit
- 55 to 150
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t≤5s
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
100
130
140
175
60
75
Unit
°C/W
Notes:
a. Surface Mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71813
S-80642-Rev. B, 24-Mar-08
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Si2311DS
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Limits
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS = 0 V, ID = - 10 µA
-8
VGS(th)
VDS = VGS, ID = - 250 µA
- 0.45
IGSS
VDS = 0 V, VGS = ± 8 V
± 100
VDS = - 6.4 V, VGS = 0 V
-1
VDS = - 6.4 V, VGS = 0 V, TJ = 55 °C
- 10
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
VDS ≤ - 5 V, VGS = - 4.5 V
-6
VDS ≤ - 5 V, VGS = - 2.5 V
-3
VGS = - 4.5 V, ID = - 3.5 A
Drain-Source
On-Resistancea
RDS(on)
- 0.8
0.036
0.058
0.072
0.096
0.120
9.0
VDS = - 5 V, ID = - 3.5 A
Diode Forward Voltage
VSD
IS = - 0.8 A, VGS = 0 V
µA
0.045
VGS = - 2.5 V, ID = - 3 A
gfs
nA
A
VGS = - 1.8 V, ID = - 0.7 A
Forward Transconductancea
V
Ω
S
- 1.2
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = - 4 V, VGS = - 4.5 V
ID ≅ - 3.5 A
8.5
12
nC
1.5
2.1
970
VDS = - 4 V, VGS = 0 V, f = 1 MHz
pF
485
160
b
Switching
Turn-On Time
Turn-Off Time
td(on)
tr
td(off)
tf
VDD = - 4 V, RL = 4 Ω
ID ≅ - 1.0 A, VGEN = - 4.5 V
RG = 6 Ω
18
25
45
65
40
60
45
65
ns
Notes:
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW ≤ 300 µs, duty cycle ≤ 2 %.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 71813
S-80642-Rev. B, 24-Mar-08
Si2311DS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
12
12
VGS = 4.5 thru 2.5 V
TC = - 55 °C
10
8
I D - Drain Current (A)
I D - Drain Current (A)
10
2V
6
1.5 V
4
25 °C
8
125 °C
6
4
2
2
1 V, 0.5 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
0.0
4.0
0.5
2.0
2.5
Transfer Characteristics
0.30
1500
0.25
1250
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
Output Characteristics
0.20
VGS = 1.8 V
0.15
VGS = 2.5 V
Ciss
1000
750
Coss
500
250
0.05
Crss
VGS = 4.5 V
0
0.00
0
2
4
6
8
10
0
12
2
4
6
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
8
8
1.4
VDS = 4 V
ID = 3.5 A
VGS = 4.5 V
ID = 3.5 A
4
2
0
0
2
4
6
8
10
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 71813
S-80642-Rev. B, 24-Mar-08
12
14
1.2
(Normalized)
6
RDS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
1.5
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
0.10
1.0
1.0
0.8
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si2311DS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.5
20
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
10
TJ = 150 °C
1
TJ = 25 °C
0.1
0.4
0.3
0.2
ID = 3.5 A
0.1
0.0
0.01
0.00
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
0
1.2
Source-Drain Diode Forward Voltage
4
6
8
On-Resistance vs. Gate-to-Source Voltage
0.4
10
ID = 250 µA
0.3
8
0.2
Power (W)
VGS(th) Variance (V)
2
VGS - Gate-to-Source Voltage (V)
0.1
6
4
0.0
TA = 25 °C
2
- 0.1
- 0.2
- 50
- 25
0
25
50
75
100
125
150
0
0.01
0.1
1
10
100
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
1000
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
PDM
0.1
0.1
t1
t2
1. Duty Cycle, D =
0.05
0.02
t1
t2
2. Per Unit Base = R thJA = 140 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (s)
10
100
500
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?71813.
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Document Number: 71813
S-80642-Rev. B, 24-Mar-08
Legal Disclaimer Notice
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Revision: 01-Jan-2022
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Document Number: 91000