SI2314EDS-T1-E3

Si2314EDS Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 FEATURES • Halogen-free According to IEC 61249-2-21 RDS(on) (Ω) ID (A) 0.033 at VGS = 4.5 V 4.9 • TrenchFET® Power MOSFET 0.040 at VGS = 2.5 V 4.4 • ESD Protected: 3000 V 0.051 at VGS = 1.8 V 3.9 Available APPLICATIONS • LI-lon Battery Protection TO-236 (SOT-23) G 1 S 2 D 3 D 3 kΩ G Top View Si2314EDS (C4)* *Marking Code S N-Channel Ordering Information: Si2314EDS-T1-E3 (Lead (Pb)-free) Si2314EDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 12 TA = 25 °C Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current TA = 70 °C b Avalanche Currentb L = 0.1 mH Single Avalanche Energy a Continuous Source Current (Diode Conduction) Power Dissipationa TA = 25 °C TA = 70 °C ID V 4.9 3.77 3.9 3.0 A IDM 15 IAS 15 EAS 11.25 mJ IS 1.0 A PD 1.25 0.75 0.80 0.48 TJ, Tstg Operating Junction and Storage Temperature Range Unit - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot Symbol t≤5s Steady State Steady State RthJA RthJF Typical Maximum 75 100 120 166 40 50 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71611 S09-0130-Rev. D, 02-Feb-09 www.vishay.com 1 Si2314EDS Vishay Siliconix SPECIFICATIONS TA = 25 °C, unless otherwise noted Limits Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage VDS VGS = 0 V, ID = 250 µA 20 VGS(th) VDS = VGS, ID = 250 µA 0.45 IGSS VDS = 0 V, VGS = ± 4.5 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-Resistancea Diode Forward Voltage V ± 1.5 VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 70 °C 75 VDS ≥ 10 V, VGS = 4.5 V 15 µA A VGS = 4.5 V, ID = 5.0 A 0.027 0.033 VGS = 2.5 V, ID = 4.5 A 0.033 0.040 VGS = 1.8 V, ID = 4.0 A 0.042 0.051 gfs VDS = 15 V, ID = 5.0 A 40 VSD IS = 1.0 A, VGS = 0 V 0.8 1.2 11.0 14.0 RDS(on) Forward Transconductancea 0.95 Ω S V b Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 10 V, VGS = 4.5 V, ID = 5.0 A nC 1.5 2.1 Switching td(on) Turn-On Delay Time VDD = 10 V, RL = 10 Ω ID ≅ 1.0 A, VGEN = 4.5 V, Rg = 6 Ω tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr IF = 1.0 A, dI/dt = 100 A/µs 0.53 0.8 1.4 2.2 13.5 20 5.9 9 13 25 µs ns Notes: a. Pulse test: PW ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1200 10 000 1000 I GSS - Gate Current (µA) I GSS - Gate Current (mA) 1000 800 600 400 100 10 1 TJ = 150 °C 0.1 TJ = 25 °C 0.01 200 0.001 0 0.0001 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Gate-Current vs. Gate-Source Voltage www.vishay.com 2 12 0.1 1 10 100 VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage Document Number: 71611 S09-0130-Rev. D, 02-Feb-09 Si2314EDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 15 15 VGS = 4.5 V thru 2.0 V 12 I D - Drain Current (A) I D - Drain Current (A) 12 9 1.5 V 6 9 6 TC = 125 °C 3 3 25 °C 0.5 V 0 0.0 0 0 1 2 3 4 0.5 1.0 1.5 2.0 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Transfer Characteristics Output Characteristics 0.15 1500 0.12 1200 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) - 55 °C 1.0 V 0.09 0.06 VGS = 1.8 V VGS = 2.5 V Ciss 900 600 300 0.03 Coss VGS = 4.5 V Crss 0 0.00 0 3 6 9 12 0 15 4 8 16 20 VDS - Drain-to-Source Voltage (V) I D - Drain Current (A) Capacitance On-Resistance vs. Drain Current 8 1.6 VGS = 4.5 V ID = 5.0 A VDS = 10 V ID = 5.0 A 1.4 6 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 12 4 2 1.2 1.0 0.8 0 0 4 8 12 16 20 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 71611 S09-0130-Rev. D, 02-Feb-09 150 www.vishay.com 3 Si2314EDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.20 20 10 TJ = 25 °C 0.1 0.01 V GS(th) Variance (V) RDS(on) - On-Resistance (Ω) 1 0.15 0.10 0.05 0.00 VSD - Source-to-Drain Voltage (V) 2 4 6 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 0.2 12 0.1 10 8 ID = 250 µA 0.0 Power (W) IS - Source Current (A) ID = 5.0 A TJ = 150 °C - 0.1 8 TA = 25 °C 6 - 0.2 4 - 0.3 2 - 0.4 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 150 0 0.01 0.1 1 10 Time (s) 100 600 Single Pulse Power Threshold Voltage 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 166 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 4. Surface Mounted 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71611. www.vishay.com 4 Document Number: 71611 S09-0130-Rev. D, 02-Feb-09 Package Information Vishay Siliconix SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS Min INCHES Max Min Max 0.044 A 0.89 1.12 0.035 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 Document Number: 71196 09-Jul-01 www.vishay.com 1 Application Note 826 Vishay Siliconix 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72609 Revision: 21-Jan-08 www.vishay.com 25 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000