SI2319DDS-T1-GE3

Si2319DDS www.vishay.com Vishay Siliconix P-Channel 40 V (D-S) MOSFET FEATURES SOT-23 (TO-236) • TrenchFET® Gen III p-channel power MOSFET • 100 % Rg and UIS tested D 3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 S APPLICATIONS • Battery switch 1 G Top View S • Motor drive control • Load switch Marking code: G4 G PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration -40 0.075 0.100 6 -3.6 a Single D P-Channel MOSFET ORDERING INFORMATION Package SOT-23 Lead (Pb)-free and halogen-free Si2319DDS-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS -40 Gate-source voltage VGS ± 20 TC = 25 °C Continuous drain current (TJ = 150 °C) TC = 70 °C TA = 25 °C Continuous source-drain diode current -2.9 ID -2.7 b, c -2.2 b, c Single pulse avalanche current IDM TC = 25 °C TA = 25 °C L = 0.1 mH Single pulse avalanche energy TC = 70 °C TA = 25 °C -1.4 IS -0.8 b, c IAS -5 EAS 1.25 mJ 1.7 1.1 IP W 1 b, c 0.6 b, c TA = 70 °C Operating junction and storage temperature range A -15 TC = 25 °C Maximum power dissipation V -3.6 TA = 70 °C Pulsed drain current (t = 100 μs) UNIT TJ, Tstg -55 to +150 °C THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient b Maximum junction-to-case (drain) SYMBOL TYPICAL MAXIMUM t5s RthJA 100 130 Steady state RthJF 60 75 UNIT °C/W Notes a. Based on TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 5 s d. Maximum under steady state conditions is 175 °C/W S17-1869-Rev. A, 25-Dec-17 Document Number: 79400 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2319DDS www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT V Static Drain-source breakdown voltage VDS VGS = 0 V, ID = -250 μA -40 - - VDS/TJ ID = -250 μA - -27.5 - VGS(th) temperature coefficient VGS(th)/TJ ID = -250 μA - 3.2 - Gate-source threshold voltage VDS temperature coefficient mV/°C VGS(th) VDS = VGS, ID = 250 μA -1 - -2.5 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = -40 V, VGS = 0 V - - -1 VDS = -40 V, VGS = 0 V, TJ = 70 °C - - -15 VDS  -10 V, VGS = -10 V -10 - - A  VGS = -10 V, ID = -2.7 A - 0.062 0.075 VGS = -4.5 V, ID = -2.4 A - 0.081 0.100 VDS = -15 V, ID = -2.7 A - 10 - - 650 - VDS = -20 V, VGS = 0 V, f = 1 MHz - 54 - - 43 - - 12.5 19 μA S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = -20 V, VGS = -10 V, ID = -2.7 A - 6 12 VDS = -20 V, VGS = -4.5 V, ID =-2.7 A - 1.8 - - 2 - f = 1 MHz 2 10 20 - 10 20 - 20 30 - 20 30 tf - 12 24 td(on) - 30 45 - 32 48 - 20 30 - 15 30 td(on) tr td(off) tr td(off) VDD = -20 V, RL = 9.1 , ID  -2.2 A, VGEN = -10 V, Rg = 1  VDD = -20 V, RL = 9.1 , ID  -2.2 A, VGEN = -4.5 V, Rg = 1  tf pF nC  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD TC = 25 °C IS = -2.2 A, VGS = 0 V - - -1.4 - - -15 - -0.8 -1.2 A V Body diode reverse recovery time trr - 15 30 ns Body diode reverse recovery charge Qrr - 9 18 nC Reverse recovery fall time ta - 10.5 - Reverse recovery rise time tb - 4.5 - IF = -2.2 A, di/dt = 100 A/μs, TJ = 25 °C ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-1869-Rev. A, 25-Dec-17 Document Number: 79400 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2319DDS www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 15 15 10000 10000 VGS = 10 V thru 4 V TC = 125 °C VGS = 3 V 6 100 1000 9 1st line 2nd line 1000 9 2nd line ID - Drain Current (A) 12 1st line 2nd line 2nd line ID - Drain Current (A) 12 6 100 TC = 25 °C 3 3 TC = -55 °C 0 0 10 0 1 2 3 4 5 10 0 1 2 4 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics Axis Title Axis Title 0.15 10000 10000 0.06 VGS = 10 V 100 Ciss 700 1000 1st line 2nd line 1000 VGS =4.5 V 0.09 2nd line C - Capacitance (pF) 0.12 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 3 350 100 0.03 Coss 0 3 6 9 12 15 10 0 10 20 ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current and Gate Voltage Capacitance Axis Title 1000 1st line 2nd line VDS = 20 V VDS = 32 V 4 100 2 0 10 0 3 6 9 12 15 2nd line RDS(on) - On-Resistance (Normalized) VDS = 10 V 8 6 10000 1.8 10000 ID = 2.7 A 40 Axis Title 10 2nd line VGS - Gate-to-Source Voltage (V) 30 VGS = 10 V, ID = 2.7 A 1.5 1000 VGS = 4.5 V, 2.4 A 1.2 100 0.9 0.6 10 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (°C) 2nd line Gate Charge On-Resistance vs. Junction Temperature S17-1869-Rev. A, 25-Dec-17 1st line 2nd line 0 Crss 0 10 Document Number: 79400 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2319DDS www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 ID = 250 μA 10 1000 1st line 2nd line TJ = 25 °C 0.1 1.8 2nd line VGS(th) (V) 1000 TJ = 150 °C 1 1st line 2nd line 2nd line IS - Source Current (A) 10000 2.0 1.6 100 100 1.4 0.01 0.001 1.2 10 0 0.2 0.4 0.6 0.8 1.0 1.2 10 -50 -25 0 25 50 75 100 125 150 VSD - Source-to-Drain Voltage (V) 2nd line TJ - Temperature (°C) 2nd line Source-Drain Diode Forward Voltage Threshold Voltage Axis Title 10000 30 1000 20 TJ = 150 °C 0.1 Power (W) 0.15 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 0.2 100 10 TJ = 25 °C 0.05 0 10 2 4 6 8 0 0.001 10 0.01 0.1 1 10 100 Time (s) VGS - Gate-to-Source Voltage (V) 2nd line On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient Axis Title 10000 100 1000 100 μs 1st line 2nd line 2nd line ID - Drain Current (A) IDM limited 10 1 1 ms Limited by RDS(on) 10 ms 0.1 TA = 25 °C Single pulse BVDSS limited 0.01 100 100 ms 10 s, 1 s DC 10 0.1 (1) 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S17-1869-Rev. A, 25-Dec-17 Document Number: 79400 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2319DDS www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 2.1 1000 1st line 2nd line 2nd line ID - Drain Current (A) 2.8 1.4 100 0.7 0 10 0 25 50 75 100 125 150 TC - Case Temperature (°C) 2nd line Current Derating a 0.90 2 0.72 Power (W) Power (W) 1.5 1 0.5 0.54 0.36 0.18 0 0 0 25 50 75 100 125 TC - Case Temperature (°C) Power, Junction-to-Case 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power, Junction-to-Ambient Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S17-1869-Rev. A, 25-Dec-17 Document Number: 79400 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2319DDS www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 175 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?79400. S17-1869-Rev. A, 25-Dec-17 Document Number: 79400 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS Min INCHES Max Min Max 0.044 A 0.89 1.12 0.035 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 Document Number: 71196 09-Jul-01 www.vishay.com 1 PAD Pattern www.vishay.com Vishay Siliconix Recommended Minimum PADs for PowerPAK® 8 x 8L Single 8.00 (0.31) 0.50 (0.02) 4.05 (0.16) 3.55 (0.14) Y 3.99 (0.16) 4.59 (0.18) 6.90 (0.27) (0, 0) 0.44 (0.02) X 0.54 (0.02) 0.85 (0.03) 6.11 (0.24) 1.29 (0.05) 1.94 (0.08) 8.25 (0.32) 3.23 (0.13) 0.82 (0.03) 2.47 (0.10) 3.62 (0.14) 4.05 (0.16) 2.03 (0.08) 1.15 (0.05) 0.88 (0.03) Dimensions in millimeters (inches) Note • Linear dimensions are in black, the same information is provided in ordinate dimensions which are in blue. Revision: 08-Apr-15 1 Document Number: 67477 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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