SI2319DS-T1-E3

Si2319DS Vishay Siliconix P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET ID (A)b 0.082 at VGS = - 10 V - 3.0 0.130 at VGS = - 4.5 V - 2.4 APPLICATIONS • Load Switch TO-236 (SOT-23) G 1 3 S D 2 Top View Si2319DS (C9)* *Marking Code Ordering Information: Si2319DS-T1-E3 (Lead (Pb)-free) Si2319DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS - 40 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)b TA = 25 °C TA = 70 °C Pulsed Drain Currenta Operating Junction and Storage Temperature Range IS TA = 25 °C TA = 70 °C PD V - 3.0 - 2.3 - 2.4 - 1.85 IDM Continuous Source Current (Diode Conduction)b Power Dissipationb ID - 12 - 1.0 A - 0.62 1.25 0.75 0.8 0.48 TJ, Tstg Unit - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc Maximum Junction-to-Foot (Drain) Symbol RthJA RthJF Typical Maximum 75 100 120 166 40 50 Unit °C/W Notes: a. Pulse width limited by maximum junction temperature. b. Surface mounted on FR4 board, t ≤ 5 s. c. Surface Mounted on FR4 board. For Spice model information via the worldwide web: www.vishay.com/www/product/spice.htm. Document Number: 72315 S09-0130-Rev. C, 02-Feb-09 www.vishay.com 1 Si2319DS Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Limits Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage VDS VGS = 0 V, ID = - 250 µA - 40 VGS(th) VDS = VGS, ID = - 250 µA -1 IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = - 40 V, VGS = 0 V -1 VDS = - 40 V, VGS = 0 V, TJ = 55 °C - 10 Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage a VDS ≤ - 5 V, VGS = - 10 V - 3.0 -6 nA µA A VGS = - 10 V, ID = - 3.0 A 0.065 0.082 VGS = - 4.5 V, ID = - 2.4 A 0.100 0.130 gfs VDS = - 5 V, ID = - 3.0 A 7.0 VSD IS = - 1.25 A, VGS = 0 V - 0.8 - 1.2 11.3 17 RDS(on) V Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = - 20 V, VGS = - 10 V ID ≅ - 3 A nC 1.7 3.3 470 VDS = - 20 V, VGS = 0 V, f = 1 MHz pF 85 65 Switchingc Turn-On Time Turn-Off Time td(on) tr td(off) tf VDD = - 20 V, RL = 20 Ω ID ≅ - 1.0 A, VGEN = - 4.5 V Rg = 6 Ω 7 15 15 25 25 40 25 40 ns Notes: a. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %. b. For design aid only, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72315 S09-0130-Rev. C, 02-Feb-09 Si2319DS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 12 20 VGS = 10 V thru 5 V 10 ID - Drain Current (A) I D - Drain Current (A) 16 12 4V 8 4 1 V, 2 V 8 6 4 TC = 125 °C 2 3V 25 °C - 55 °C 0 0.0 0 0 2 4 6 8 10 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.20 800 600 0.12 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 700 0.16 VGS = 4.5 V 0.08 VGS = 10 V Ciss 500 400 300 200 0.04 Coss 100 Crss 0.00 0 0 2 4 6 8 10 12 0 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 35 40 125 150 1.8 VDS = 20 V ID = 3 A 1.6 8 6 4 2 VGS = 10 V ID = 3 A 1.4 (Normalized) RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 5 ID - Drain Current (A) 1.2 1.0 0.8 0 0 2 4 6 8 Qg - Total Gate Charge (nC) Gate Charge Document Number: 72315 S09-0130-Rev. C, 02-Feb-09 10 12 0.6 - 50 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si2319DS Vishay Siliconix 20 0.8 10 0.7 R DS(on) - On-Resistance (Ω) I S - Source Current (A) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted TJ = 150 °C 1 TJ = 25 °C 0.6 0.5 0.4 ID = 3 A 0.3 0.2 0.1 0.0 0.1 0.2 0.4 0.6 0.8 1.0 1.2 0 4 6 8 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.6 10 0.4 8 0.2 ID = 250 µA 0.0 - 0.2 - 0.4 - 50 2 VSD - Source-to-Drain Voltage (V) Power (W) VGS(th) Variance (V) 0 10 6 4 TA = 25 °C Single Pulse 2 0 - 25 0 25 50 75 100 125 0.01 150 0.1 TJ - Temperature (°C) 1 10 100 1000 Time (s) Threshold Voltage Single Pulse Power 100.0 Limited by ( RDS(on) * ID - Drain Current (A) 10.0 10 µs 100 µs 1.0 1 ms 10 ms 0.1 100 ms TA = 25 °C Single Pulse 0.01 0.1 1 10 s, 1 s 100 s, DC 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case www.vishay.com 4 Document Number: 72315 S09-0130-Rev. C, 02-Feb-09 Si2319DS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 166 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72315. Document Number: 72315 S09-0130-Rev. C, 02-Feb-09 www.vishay.com 5 Package Information Vishay Siliconix SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS Min INCHES Max Min Max 0.044 A 0.89 1.12 0.035 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 Document Number: 71196 09-Jul-01 www.vishay.com 1 Application Note 826 Vishay Siliconix 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72609 Revision: 21-Jan-08 www.vishay.com 25 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 09-Jul-2021 1 Document Number: 91000