SI2323DDS-T1-GE3

Si2323DDS Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.039 at VGS = - 4.5 V - 5.3 0.050 at VGS = - 2.5 V - 4.7 0.075 at VGS = - 1.8 V - 3.8 d Qg (Typ.) 13.6 nC APPLICATIONS TO-236 (SOT-23) G • • • • 1 3 S • TrenchFET® Power MOSFET • 100 % Rg Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 D Load Switch PA Switch DC/DC Converters Power Management S G 2 Top View Si2323DDS (E4)* * Marking Code D P-Channel MOSFET Ordering Information: Si2323DDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ±8 TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C - 4.3 ID - 4.1a,b - 3.2a,b IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C Maximum Power Dissipation TA = 25 °C - 1.4 IS - 0.8a,b 1.7 1.1 PD W 0.96a,b 0.62a,b TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range A - 20 TC = 25 °C TC = 70 °C V - 5.3 TA = 70 °C Pulsed Drain Current (t = 300 µs) Unit - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Foot (Drain) Symbol Typical Maximum t5s RthJA 100 130 Steady State RthJF 60 75 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 5 s. c. Maximum under steady state conditions is 175 °C/W. d. TC = 25 °C. Document Number: 64004 S13-1165-Rev. A, 13-May-13 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2323DDS Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient V - 13 ID = - 250 µA mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA -1 V IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea VDS - 5 V, VGS = - 4.5 V RDS(on) Forward Transconductancea gfs - 2.8 - 0.4 - 15 µA A VGS = - 4.5 V, ID = - 4.1 A 0.032 0.039 VGS = - 2.5 V, ID = - 2 A 0.041 0.050 VGS = - 1.8 V, ID = - 1 A 0.058 0.075 VDS = - 10 V, ID = - 4.1 A 18  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 1160 VDS = - 10 V, VGS = 0 V, f = 1 MHz 120 VDS = - 10 V, VGS = - 8 V, ID = - 4.1 A VDS = - 10 V, VGS = - 4.5 V, ID = - 4.1 A VDD = - 10 V, RL = 3.1  ID  - 3.2 A, VGEN = - 4.5 V, Rg = 1  tr Rise Time td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time 2 10 20 24 36 22 40 78 11 20 td(on) 8 16 9 18 VDD = - 10 V, RL = 3.1  ID  - 3.2 A, VGEN = - 8 V, Rg = 1  tf Fall Time 2 tf td(off) Turn-Off Delay Time 36 21 52 tr Rise Time 24 13.6 nC 2.2 f = 1 MHz td(on) Turn-On Delay Time pF 135 58 87 9 18  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current TC = 25 °C IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb - 1.4 - 20 IS = - 3.2 A, VGS = 0 V IF = - 3.2 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.79 - 1.2 V 14 25 ns 6 12 nC 8 6 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For technical questions, contact: pmostechsupport@vishay.com Document Number: 64004 S13-1165-Rev. A, 13-May-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2323DDS Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 5 VGS = 5 V thru 2.5 V 4 15 ID - Drain Current (A) ID - Drain Current (A) 20 VGS = 2 V 10 VGS = 1.8 V 5 VGS = 1.5 V 3 TC = 25 °C 2 TC = 125 °C 1 TC = - 55 °C 0 0 0 VDS - Drain-to-Source Voltage (V) 0.5 1 1.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.5 1 1.5 0 2 2000 0.10 0.08 VGS = 1.8 V 1500 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 2 0.06 VGS = 2.5 V 0.04 VGS = 4.5 V Ciss 1000 500 0.02 Coss Crss 0 0.00 0 5 10 15 0 20 5 10 ID - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage 20 Capacitance 8 1.5 VGS = 4.5 V, 4.1 A RDS(on) - On-Resistance (Normalized) ID = 4.1 A VGS - Gate-to-Source Voltage (V) 15 VDS - Drain-to-Source Voltage (V) 6 VDS = 16 V 4 VDS = 5 V VDS = 10 V 2 1.3 1.1 VGS = 1.8 V, 1 A 0.9 VGS = 2.5 V, 2 A 0 0.7 0 7 14 21 Qg - Total Gate Charge (nC) Gate Charge Document Number: 64004 S13-1165-Rev. A, 13-May-13 28 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2323DDS Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.1 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 4.1 A 10 TJ = 150 °C TJ = 25 °C 1 0.08 0.06 TJ = 125 °C 0.04 TJ = 25 °C 0.02 0.1 0 0.0 0.3 0.6 0.9 1.2 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 30 0.9 0.75 Power (W) VGS(th) (V) 20 ID = 250 μA 0.6 10 0.45 0.3 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 0 0.001 150 0.01 0.1 1 10 100 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* ID - Drain Current (A) 10 100 μs 1 ms 1 10 ms 100 ms 0.1 1 s, 10s TA = 25 °C BVDSS Limited DC 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 For technical questions, contact: pmostechsupport@vishay.com Document Number: 64004 S13-1165-Rev. A, 13-May-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2323DDS Vishay Siliconix 6 2 4.5 1.5 Power (W) ID - Drain Current (A) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 3 1 0.5 1.5 0 0 0 25 50 75 100 TC - Case Temperature (°C) 125 0 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating, Junction-to-Foot Current Derating* 0.9 Power (W) 0.72 0.54 0.36 0.18 0 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 64004 S13-1165-Rev. A, 13-May-13 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2323DDS Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 175 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 4. Surface Mounted 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?64004. www.vishay.com 6 For technical questions, contact: pmostechsupport@vishay.com Document Number: 64004 S13-1165-Rev. A, 13-May-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS Min INCHES Max Min Max 0.044 A 0.89 1.12 0.035 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 Document Number: 71196 09-Jul-01 www.vishay.com 1 Application Note 826 Vishay Siliconix 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72609 Revision: 21-Jan-08 www.vishay.com 25 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000