Si2324DS
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
FEATURES
MOSFET PRODUCT SUMMARY
RDS(on) ()
ID (A)a
0.234 at VGS = 10 V
2.3
0.267 at VGS = 6 V
2.1
0.278 at VGS = 4.5 V
1.7
VDS (V)
100
Qg (Typ.)
2.9 nC
• DC/DC Converters
• Load Switch
• LED Backlighting in LCD TVs
1
3
S
TrenchFET® Power MOSFET
100 % Rg Tested
100 % UIS Tested
Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
TO-236
(SOT-23)
G
•
•
•
•
D
2
Top View
Si2324DS (D4)*
* Marking Code
Ordering Information:
Si2324DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Limit
100
± 20
2.3
1.8
1.6b, c
1.3b, c
5
2.1
1.0b, c
5
1.25
2.5
1.6
1.25b, c
0.8b, c
- 55 to 150
ID
IDM
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
5 s
Maximum Junction-to-Ambientb, d
Steady State
Maximum Junction-to-Foot (Drain)
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 166 °C/W.
Document Number: 67691
S12-1140-Rev. B, 21-May-12
Symbol
RthJA
RthJF
Typical
75
40
For technical questions, contact: pmostechsupport@vishay.com
Maximum
100
50
Unit
°C/W
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si2324DS
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VDS = 0 V, ID = 250 µA
100
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistance
a
RDS(on)
Forward Transconductancea
gfs
105
ID = 250 µA
Gate-Source Leakage
V
mV/°C
- 5.2
1.2
2.8
V
± 100
nA
VDS = 100 V, VGS = 0 V
-1
VDS = 100 V, VGS = 0 V, TJ = 55 °C
- 10
VDS 5 V, VGS = 4.5 V
5
µA
A
VGS = 10 V, ID = 1.5 A
0.195
0.234
VGS = 6 V, ID = 1 A
0.222
0.267
VGS = 4.5 V, ID = 0.5 A
0.231
0.278
VDS = 20 V, ID = 1.5 A
2.0
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
190
VDS = 50 V, VGS = 0 V, f = 1 MHz
22
VDS = 50 V, VGS = 10 V, ID = 1.6 A
5.2
10.4
2.9
5.8
13
VDS = 50 V, VGS = 4.5 V, ID = 1.6 A
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
2.8
30
45
26
39
17
26
12
20
6
12
10
20
VDD = 50 V, RL = 39
ID = 1.3 A, VGEN = 10 V, Rg = 1
tf
Fall Time
1.4
tf
td(off)
Turn-Off Delay Time
VDD = 50 V, RL = 39
ID = 1.3 A, VGEN = 4.5 V, Rg = 1
0.3
td(on)
tr
Rise Time
0.75
nC
1.4
f = 1 MHz
td(on)
Turn-On Delay Time
pF
10
20
6
12
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
TC = 25 °C
- 2.1
- 20
IS = 1.3 A
- 0.8
- 1.2
A
V
Body Diode Reverse Recovery Time
trr
22
33
ns
Body Diode Reverse Recovery Charge
Qrr
21
32
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = 1.3 A, dI/dt = 100 A/µs, TJ = 25 °C
16
6
ns
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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For technical questions, contact: pmostechsupport@vishay.com
Document Number: 67691
S12-1140-Rev. B, 21-May-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si2324DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
5
3
VGS = 10 V thru 5 V
VGS = 4 V
2.4
ID - Drain Current (A)
ID - Drain Current (A)
4
3
2
VGS = 3 V
1
1.8
TC = 25 °C
1.2
0.6
TC = 125 °C
TC = - 55 °C
0
0
0
0.5
1
1.5
2
0
3
4
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
300
0.26
240
C - Capacitance (pF)
VGS = 4.5 V
0.24
VGS = 6 V
0.22
0.20
VGS = 10 V
Ciss
180
120
60
0.18
Coss
Crss
0
0.16
0
1
2
3
4
5
0
20
40
60
80
100
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
Capacitance
On-Resistance vs. Drain Current and Gate Voltage
10
2.2
ID = 1.6 A
ID = 1.5 A
8
VDS = 25 V
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
2
VDS - Drain-to-Source Voltage (V)
0.28
RDS(on) - On-Resistance (Ω)
1
6
VDS = 50 V
4
VDS = 80 V
1.75
VGS = 6 V
1.3
0.85
2
VGS = 10 V
0
0.4
0
1.5
3
4.5
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 67691
S12-1140-Rev. B, 21-May-12
6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
For technical questions, contact: pmostechsupport@vishay.com
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si2324DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
0.6
0.45
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 1.5 A
TJ = 150 °C
1
TJ = 125 °C
0.3
T = 25 °C
0.15
TJ = 25 °C
0.1
0.0
0
0.3
0.6
0.9
2
1.2
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
2.8
10
8
Power (W)
2.5
VGS(th) (V)
4
ID = 250 μA
2.2
6
4
1.9
2
1.6
- 50
- 25
0
25
50
75
100
125
TA = 25 °C
0
0.01
150
0.1
1
10
100
1000
Time (s)
TJ - Temperature (°C)
Single Pulse Power
Threshold Voltage
10
Limited by R DS(on)*
100 μs
ID - Drain Current (A)
1
1 ms
10 ms
0.1
100 ms
1 s, 10 s
0.01
DC
TA = 25 °C
Single Pulse
0.001
0.1
1
BVDSS Limited
10
100
1000
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
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For technical questions, contact: pmostechsupport@vishay.com
Document Number: 67691
S12-1140-Rev. B, 21-May-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si2324DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2.8
ID - Drain Current (A)
2.1
1.4
0.7
0.0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
3
1.0
2.4
0.8
1.8
0.6
Power (W)
Power (W)
Current Derating*
1.2
0.6
0.4
0.2
0
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power, Junction-to-Foot
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 67691
S12-1140-Rev. B, 21-May-12
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si2324DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 166 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67691.
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For technical questions, contact: pmostechsupport@vishay.com
Document Number: 67691
S12-1140-Rev. B, 21-May-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOT-23 (TO-236): 3-LEAD
b
3
E1
1
E
2
e
S
e1
D
0.10 mm
C
0.004"
A2
A
C
q
Gauge Plane
Seating Plane
Seating Plane
C
A1
Dim
0.25 mm
L
L1
MILLIMETERS
Min
INCHES
Max
Min
Max
0.044
A
0.89
1.12
0.035
A1
0.01
0.10
0.0004
0.004
A2
0.88
1.02
0.0346
0.040
b
0.35
0.50
0.014
0.020
c
0.085
0.18
0.003
0.007
D
2.80
3.04
0.110
0.120
E
2.10
2.64
0.083
0.104
E1
1.20
1.40
0.047
e
0.95 BSC
e1
L
1.90 BSC
0.40
L1
q
0.0748 Ref
0.60
0.016
0.64 Ref
S
0.024
0.025 Ref
0.50 Ref
3°
0.055
0.0374 Ref
0.020 Ref
8°
3°
8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
Document Number: 71196
09-Jul-01
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Application Note 826
Vishay Siliconix
0.049
(1.245)
0.029
0.022
(0.559)
(0.724)
0.037
(0.950)
(2.692)
0.106
RECOMMENDED MINIMUM PADS FOR SOT-23
0.053
(1.341)
0.097
(2.459)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index Return to Index
APPLICATION NOTE
Document Number: 72609
Revision: 21-Jan-08
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Revision: 01-Jan-2022
1
Document Number: 91000
