Si2329DS
Vishay Siliconix
P-Channel 8 V (D-S) MOSFET
FEATURES
MOSFET PRODUCT SUMMARY
RDS(on) ()
ID (A)a
0.030 at VGS = - 4.5 V
- 6e
0.036 at VGS = - 2.5 V
- 6e
0.048 at VGS = - 1.8 V
- 5.9
0.068 at VGS = - 1.5 V
-5
0.120 at VGS = - 1.2 V
- 3.7
VDS (V)
-8
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
11.8 nC
APPLICATIONS
• Load Switch
• Low Voltage Gate Drive
- Low On-Resistance
• Battery Management in Portable Equipment
TO-236
(SOT-23)
G
1
S
2
3
D
Top View
Si2329DS (D9)*
* Marking Code
Ordering Information: Si2329DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Maximum Power Dissipation
ID
IDM
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
Limit
-8
±5
- 6e
-6
- 5.3b, c
- 4.2b, c
- 20
- 2.1
- 1.0b, c
2.5
1.6
1.25b, c
0.8b, c
- 55 to 150
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
IS
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
5 s
Maximum Junction-to-Ambientb, d
Steady State
Maximum Junction-to-Foot (Drain)
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 166 °C/W.
e. Package limited.
Document Number: 67690
S11-0865-Rev. A, 02-May-11
Symbol
RthJA
RthJF
Typical
75
40
Maximum
100
50
Unit
°C/W
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si2329DS
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
-8
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VGS(th)/TJ
ID = - 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 5 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State
Resistancea
a
Forward Transconductance
RDS(on)
gfs
V
-6
mV/°C
2.3
- 0.35
- 0.8
V
± 100
nA
VDS = - 8 V, VGS = 0 V
-1
VDS = - 8 V, VGS = 0 V, TJ = 55 °C
- 10
VDS - 5 V, VGS = - 5.3 V
- 20
µA
A
VGS = - 4.5 V, ID = - 5.3 A
0.025
0.030
VGS = - 2.5 V, ID = - 4.8 A
0.030
0.036
VGS = - 1.8 V, ID = - 4.2 A
0.037
0.048
VGS = - 1.5 V, ID = - 3.5 A
0.045
0.068
VGS = - 1.2 V, ID = - 0.8 A
0.060
0.120
VDS = - 4 V, ID = - 5.3 A
2.0
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
1485
VDS = - 4 V, VGS = 0 V, f = 1 MHz
480
VDS = - 4 V, VGS = - 4.5 V, ID = - 5.3 A
19.3
29
11.8
18
435
VDS = - 4 V, VGS = - 2.5 V, ID = - 5.3 A
tr
Rise Time
td(off)
Turn-Off Delay Time
VDD = - 4 V, RL = 0.9
ID = - 4.2 A, VGEN = - 4.5 V, Rg = 1
tf
Fall Time
1.7
nC
6.2
f = 1 MHz
td(on)
Turn-On Delay Time
pF
0.8
4.2
8.4
20
30
22
33
46
69
20
30
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward
Currenta
Body Diode Voltage
IS
TC = 25 °C
- 2.1
ISM
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
- 20
IS = - 4.2 A
IF = - 4.2 A, dI/dt = 100 A/µs, TJ = 25 °C
A
- 0.8
- 1.2
V
40
60
ns
26
39
nC
17
23
ns
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 67690
S11-0865-Rev. A, 02-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si2329DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
5
20
VGS = 5 V thru 2 V
4
VGS = 1.5 V
ID - Drain Current (A)
ID - Drain Current (A)
15
10
3
TC = 25 °C
2
5
1
TC = 125 °C
VGS = 1 V
TC = - 55 °C
0
0
0
0.5
1
1.5
0
2
0.3
0.6
0.9
1.2
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1.5
2800
0.090
VGS = 1.2 V
RDS(on) - On-Resistance (Ω)
0.075
C - Capacitance (pF)
2100
0.060
VGS = 1.5 V
VGS = 1.8 V
0.045
VGS = 2.5 V
Ciss
1400
700
0.030
Coss
Crss
VGS = 4.5 V
0
0.015
0
5
10
15
0
20
2
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
6
8
Capacitance
1.45
5
ID = 5.3 A
ID = 5.3 A
4
VDS = 2 V
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
4
VDS - Drain-to-Source Voltage (V)
3
VDS = 4 V
2
VDS = 6.4 V
1.25
VGS = 4.5 V
1.05
0.85
1
VGS = 2.5 V
0
0
5
10
15
20
0.65
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 67690
S11-0865-Rev. A, 02-May-11
150
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si2329DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.06
10
0.05
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 5.3 A
TJ = 150 °C
1
TJ = 25 °C
0.04
TJ = 125 °C
0.03
TJ = 25 °C
0.1
0.0
0.02
0.2
0.4
0.6
0.8
1.0
1
2
0.5
8
0.4
Power (W)
VGS(th) (V)
10
ID = 250 μA
0.3
0.2
6
4
2
0
25
50
75
100
5
On-Resistance vs. Gate-to-Source Voltage
0.6
- 25
4
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.1
- 50
3
125
0
0.01
150
TA = 25 °C
0.1
1
10
100
1000
Time (s)
TJ - Temperature (°C)
Single Pulse Power
Threshold Voltage
100
Limited by RDS(on)*
ID - Drain Current (A)
10
1 ms
10 ms
1
100 ms
1 s, 10 s
DC
0.1
TC = 25 °C
Single Pulse
0.01
0.1
BVDSS Limited
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
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Document Number: 67690
S11-0865-Rev. A, 02-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si2329DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
9.0
ID - Drain Current (A)
7.5
Package Limited
6.0
4.5
3.0
1.5
0.0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
3
1.0
2.4
0.8
1.8
0.6
Power (W)
Power (W)
Current Derating*
1.2
0.6
0.4
0.2
0
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power, Junction-to-Foot
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 67690
S11-0865-Rev. A, 02-May-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si2329DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 166 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67690.
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Document Number: 67690
S11-0865-Rev. A, 02-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOT-23 (TO-236): 3-LEAD
b
3
E1
1
E
2
e
S
e1
D
0.10 mm
C
0.004"
A2
A
C
q
Gauge Plane
Seating Plane
Seating Plane
C
A1
Dim
0.25 mm
L
L1
MILLIMETERS
Min
INCHES
Max
Min
Max
0.044
A
0.89
1.12
0.035
A1
0.01
0.10
0.0004
0.004
A2
0.88
1.02
0.0346
0.040
b
0.35
0.50
0.014
0.020
c
0.085
0.18
0.003
0.007
D
2.80
3.04
0.110
0.120
E
2.10
2.64
0.083
0.104
E1
1.20
1.40
0.047
e
0.95 BSC
e1
L
1.90 BSC
0.40
L1
q
0.0748 Ref
0.60
0.016
0.64 Ref
S
0.024
0.025 Ref
0.50 Ref
3°
0.055
0.0374 Ref
0.020 Ref
8°
3°
8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
Document Number: 71196
09-Jul-01
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Application Note 826
Vishay Siliconix
0.049
(1.245)
0.029
0.022
(0.559)
(0.724)
0.037
(0.950)
(2.692)
0.106
RECOMMENDED MINIMUM PADS FOR SOT-23
0.053
(1.341)
0.097
(2.459)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index Return to Index
APPLICATION NOTE
Document Number: 72609
Revision: 21-Jan-08
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Revision: 09-Jul-2021
1
Document Number: 91000
