Si2331DS
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)
0.048 at VGS = - 4.5 V
- 3.6
- 12
0.062 at VGS = - 2.5 V
- 3.2
0.090 at VGS = - 1.8 V
- 2.7
• Halogen-free Option Available
• TrenchFET® Power MOSFETS
RoHS
COMPLIANT
APPLICATIONS
• Load Switch
• PA Switch
TO-236
(SOT-23)
G
1
3
S
D
2
Top View
Si2331DS *(E1)
* Marking Code
Ordering Information: Si2331DS-T1-E3 (Lead (Pb)-free)
Si2331DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
VDS
- 12
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
Pulsed Drain Currenta
IS
TA = 25 °C
TA = 70 °C
PD
- 3.2
- 2.9
- 2.6
- 12
- 0.74
A
- 0.59
0.89
0.71
0.57
0.45
TJ, Tstg
Operating Junction and Storage Temperature Range
V
- 3.6
IDM
Continuous Source Current (Diode Conduction)a
Power Dissipationa
ID
Unit
- 55 to 150
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t≤5s
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
115
140
140
175
60
75
Unit
°C/W
Notes:
a. Surface Mounted on FR4 board.
b. t ≤ 5 s.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm.
Document Number: 72152
S-80642-Rev. C, 24-Mar-08
www.vishay.com
1
Si2331DS
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Limits
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS = 0 V, ID = - 10 µA
- 12
VGS(th)
VDS = VGS, ID = - 250 µA
- 0.45
IGSS
VDS = 0 V, VGS = ± 8 V
± 100
VDS = - 12 V, VGS = 0 V
-1
VDS = - 12 V, VGS = 0 V, TJ = 55 °C
- 10
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltage
VDS ≤ - 5 V, VGS = - 4.5 V
- 0.90
-6
nA
µA
A
VGS = - 4.5 V, ID = - 3.6 A
0.038
0.048
VGS = - 2.5 V, ID = - 3.2 A
0.049
0.062
VGS = - 1.8 V, ID = - 2.7 A
0.070
0.090
gfs
VDS = - 5 V, ID = - 3.6 A
3
VSD
IS = - 1.6 A, VGS = 0 V
RDS(on)
V
Ω
S
- 1.2
V
b
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = - 6 V, VGS = - 4.5 V
ID ≅ - 3.6 A
9
14
nC
1.3
2.5
780
VDS = - 6 V, VGS = 0 V, f = 1 MHz
pF
290
210
Switchingb
Turn-On Time
Turn-Off Time
td(on)
tr
td(off)
tf
VDD = - 6 V, RL = 6 Ω
ID ≅ - 1.0 A, VGEN = - 4.5 V
RG = 6 Ω
20
30
35
55
65
100
50
75
ns
Notes:
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 72152
S-80642-Rev. C, 24-Mar-08
Si2331DS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
12
12
VGS = 4.5 thru 2 V
10
I D - Drain Current (A)
I D - Drain Current (A)
10
8
6
1.5 V
4
2
8
6
4
TC = 125 °C
2
1.0 V
25 °C
0.5 V
- 55 °C
0
0.00
0
0
1
2
3
4
5
6
0.25
0.75
1.00
1.25
1.50
1.75
2.00
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1500
0.30
0.25
1200
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
0.50
0.20
0.15
VGS = 1.8 V
0.10
Ciss
900
600
Coss
VGS = 2.5 V
300
0.05
Crss
VGS = 4.5 V
0
0.00
0
2
4
6
8
10
0
12
4
6
8
10
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
5
12
1.4
VDS = 6 V
ID = 3.6 A
VGS = 4.5 V
ID = 3.6 A
3
2
1.2
(Normalized)
4
RDS(on) - On-Resistance
VGS - Gate-to-Source V oltage (V)
2
1.0
0.8
1
0
0
2
4
6
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 72152
S-80642-Rev. C, 24-Mar-08
8
10
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
www.vishay.com
3
Si2331DS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.15
20
TJ = 150 °C
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
10
TJ = 25 °C
1
0.09
0.06
ID = 3.6 A
0.03
0.00
0.1
0.0
0.12
0.2
0.4
0.6
0.8
1.0
0
1.2
1
2
4
5
6
7
8
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.4
10
ID = 250 µA
0.3
8
0.2
Power (W)
V GS(th) Variance (V)
3
0.1
6
4
0.0
TA = 25 °C
2
- 0.1
- 0.2
- 50
0
- 25
0
25
50
75
100
125
150
0.01
0.1
10
1
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
100
600
100
Limited
by R DS(on)*
I D - Drain Current (A)
10
100 µs, 10 µs
1 ms
1
10 ms
100 ms
DC, 1 s
0.1
TA = 25 °C
Single Pulse
0.01
0.1
* VGS
1
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which RDS(on) is specified
Safe Operating Area
www.vishay.com
4
Document Number: 72152
S-80642-Rev. C, 24-Mar-08
Si2331DS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
t1
0.05
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 130 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72152.
Document Number: 72152
S-80642-Rev. C, 24-Mar-08
www.vishay.com
5
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2022
1
Document Number: 91000