Si2335DS
Vishay Siliconix
P-Channel 12-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
PRODUCT SUMMARY
VDS (V)
- 12
RDS(on) (Ω)
ID (A)
0.051 at VGS = - 4.5 V
- 4.0
0.070 at VGS = - 2.5 V
- 3.5
0.106 at VGS = - 1.8 V
- 3.0
Available
• TrenchFET® Power MOSFETs: 1.8 V Rated
TO-236
(SOT-23)
G
1
3
S
D
2
Top View
Si2335DS (E5)*
*Marking Code
Ordering Information: Si2335DS-T1-E3 (Lead (Pb)-free)
Si2335DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
VDS
- 12
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a, b
TA = 25 °C
TA = 70 °C
Continuous Source Current (Diode Conduction)a, b
- 3.2
- 3.3
- 2.6
- 15
IS
TA = 25 °C
TA = 70 °C
PD
A
- 1.6
1.25
0.75
0.8
0.48
TJ, Tstg
Operating Junction and Storage Temperature Range
V
- 4.0
IDM
Pulsed Drain Current
Maximum Power Dissipationa, b
ID
Unit
- 55 to 150
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t≤5s
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
75
100
120
166
40
50
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71314
S09-0130-Rev. B, 02-Feb-09
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Si2335DS
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Limits
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
VDS
VGS = 0 V, ID = - 10 µA
- 12
VGS(th)
VDS = VGS, ID = - 250 µA
- 0.45
IGSS
VDS = 0 V, VGS = ± 8 V
± 100
VDS = - 9.6 V, VGS = 0 V
-1
VDS = - 9.6 V, VGS = 0 V, TJ = 55 °C
- 10
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source
On-Resistancea
RDS(on)
VDS ≤ - 5 V, VGS = - 4.5 V
- 15
VDS ≤ - 5 V, VGS = - 2.5 V
-6
V
0.042
0.051
VGS = - 2.5 V, ID = - 3.5 A
0.058
0.070
VGS = - 1.8 V, ID = - 2.0 A
0.082
0.106
7
gfs
VDS = - 5 V, ID = - 4.0 A
Diode Forward Voltage
VSD
IS = - 1.6 A, VGS = 0 V
µA
A
VGS = - 4.5 V, ID = - 4.0 A
Forward Transconductancea
nA
Ω
S
- 1.2
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
9
VDS = - 6 V, VGS = - 4.5 V, ID ≅ - 4.0 A
15
nC
1.9
Gate-Drain Charge
Qgd
1.5
Input Capacitance
Ciss
1225
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
130
td(on)
13.0
20
15
25
50
70
19
35
VDS = - 6 V, VGS = 0 V, f = 1 MHz
pF
260
Switchingc
Turn-On Time
Turn-Off Time
tr
td(off)
VDD = - 6 V, RL = 6 Ω
ID ≅ - 1.0 A, VGEN = - 4.5 V, RG = 6 Ω
tf
ns
Notes:
a. Pulse test: PW ≤ 300 µs, duty cycle ≤ 2 %.
b. For design aid only, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 71314
S09-0130-Rev. B, 02-Feb-09
Si2335DS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
15
15
VGS = 4.5 V thru 2.5 V
TC = - 55 °C
12
I D - Drain Current (A)
I D - Drain Current (A)
12
2V
9
6
1.5 V
3
25 °C
9
125 °C
6
3
1 V, 0.5 V
0
0
2
4
6
8
0
0.0
10
0.5
1.0
1.5
2.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.30
2.5
2000
1500
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
0.25
0.20
VGS = 1.8 V
0.15
0.10
VGS = 2.5 V
Ciss
1000
500
Coss
0.05
VGS = 4.5 V
0.00
0
3
6
9
12
15
0
3
6
9
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
12
1.6
8
VDS = 6 V
ID = 4.0 A
4
2
(Normalized)
1.4
6
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
Crss
0
VGS = 4.5 V
ID = 4.0 A
1.2
1.0
0.8
0
0
5
10
15
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 71314
S09-0130-Rev. B, 02-Feb-09
20
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si2335DS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.5
20
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
10
TJ = 150 °C
TJ = 25 °C
1
0.4
ID = 4.0 A
0.3
0.2
0.1
0.0
0.1
0.0
0.2
0.4
0.6
0.8
1.0
0
1.2
4
6
8
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.4
12
ID = 250 µA
0.3
10
0.2
8
Power (W)
V GS(th) Variance (V)
2
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
0.1
0.0
6
4
TA = 25 °C
- 0.1
2
- 0.2
- 50
- 25
0
25
50
75
100
125
150
0
0.01
0.1
1
10
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
100
600
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
t1
0.05
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 120 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71314.
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Document Number: 71314
S09-0130-Rev. B, 02-Feb-09
Legal Disclaimer Notice
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Vishay
Disclaimer
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Revision: 01-Jan-2022
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Document Number: 91000
