Si2336DS
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) ()
ID (A)a
0.042 at VGS = 4.5 V
5.2
0.046 at VGS = 2.5 V
4.9
0.052 at VGS = 1.8 V
4.1
VDS (V)
30
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Qg (Typ.)
5.7 nC
APPLICATIONS
TO-236
(SOT-23)
G
1
3
S
D
• DC/DC Converters
• Boost Converters
D
G
2
Top View
Si2336DS (N4)*
S
* Marking Code
Ordering Information:
Si2336DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
±8
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
4.1
ID
TA = 25 °C
4.3b, c
TA = 70 °C
3.5b, c
IDM
1.5
IS
TA = 25 °C
1b, c
TC = 25 °C
1.8
TC = 70 °C
Maximum Power Dissipation
1.1
PD
TA = 25 °C
Soldering Recommendations (Peak
W
1.25b, c
0.8b, c
TA = 70 °C
Operating Junction and Storage Temperature Range
A
20
TC = 25 °C
Continuous Source-Drain Diode Current
V
5.2
TC = 70 °C
Pulsed Drain Current
Unit
TJ, Tstg
- 55 to 150
Temperature)d, e
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Maximum Junction-to-Ambientb, d
t5s
RthJA
80
100
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
55
70
Unit
°C/W
Notes:
a. TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 130 °C/W.
Document Number: 71978
S13-0630-Rev. B, 25-Mar-13
For technical questions, contact: pmostechsupport@vishay.com
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1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si2336DS
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
V
31
ID = 250 µA
mV/°C
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = 250 µA
1
V
IGSS
VDS = 0 V, VGS = ± 8 V
± 100
nA
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
10
Gate-Source Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
RDS(on)
gfs
Forward Transconductancea
VDS 5 V, VGS = 10 V
- 2.7
0.4
10
µA
A
VGS 4.5 V, ID = 3.8 A
0.034
0.042
VGS 2.5 V, ID = 3.6 A
0.038
0.046
VGS 1.8 V, ID = 2 A
0.041
0.052
VDS = 15 V, ID = 3.8 A
30
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
560
VDS = 15 V, VGS = 0 V, f = 1 MHz
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
10
15
5.7
8.6
VDS = 15 V, VGS = 4.5 V, ID = 3.4 A
0.85
VDD = 15 V, RL = 4.3
ID 3.5 A, VGEN = 4.5 V, Rg = 1
3
6
6
12
10
20
20
40
10
20
5
10
10
20
VDD = 15 V, RL = 4.3
ID 3.5 A, VGEN = 8 V, Rg = 1
tf
Fall Time
0.6
td(on)
td(off)
Turn-Off Delay Time
nC
0.75
f = 1 MHz
tf
tr
Rise Time
pF
VDS = 15 V, VGS = 8 V, ID = 3.4 A
td(on)
Turn-On Delay Time
60
27
17
30
10
20
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
1.5
20
IS = 3.5 A, VGS 0 V
IF = 3.5 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.8
1.2
V
15
30
ns
6
12
nC
8
7
ns
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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For technical questions, contact: pmostechsupport@vishay.com
Document Number: 71978
S13-0630-Rev. B, 25-Mar-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si2336DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
20
V GS = 5 V thru 2 V
8
V GS = 1.5 V
ID - Drain Current (A)
ID - Drain Current (A)
16
12
8
6
4
T C = 25 °C
2
4
V GS = 1 V
T C = 125 °C
V GS = 0.5 V
T C = - 55 °C
0
0
0
0.5
1.0
1.5
2.0
2.5
0
3.0
0.3
1.2
1.5
Transfer Characteristics
0.06
800
0.05
600
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
Output Characteristics
V GS = 1.8 V
V GS = 2.5 V
V GS = 4.5 V
0.03
0.9
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
0.04
0.6
Ciss
400
200
Coss
0.02
Crss
0
0
4
8
12
16
20
0
10
15
20
25
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
30
1.6
8
V GS = 4.5 V, V GS = 2.5 V
ID = 3.8 A
ID = 4.3 A
V DS = 7.5 V
V DS = 24 V
4
V DS = 15 V
(Normalized)
1.4
6
RDS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
5
V GS = 1.8 V
1.2
1.0
2
0.8
0
0
2
4
6
8
10
0.6
- 50
- 25
Document Number: 71978
S13-0630-Rev. B, 25-Mar-13
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Qg - Total Gate Charge (nC)
Gate Charge
0
On-Resistance vs. Junction Temperature
For technical questions, contact: pmostechsupport@vishay.com
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si2336DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.10
100
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 3.8 A
T J = 150 °C
10
T J = 25 °C
1
0.08
0.06
T J = 125 °C
0.04
T J = 25 °C
0.02
0
0.1
0
0.2
0.4
0.6
0.8
1.0
0
1.2
1
VSD - Source-to-Drain Voltage (V)
2
3
4
5
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.8
40
0.7
30
Power (W)
VGS(th) (V)
0.6
0.5
ID = 250 μA
20
0.4
10
0.3
0.2
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
100
1000
Time (s)
TJ - Temperature (°C)
Single Pulse Power
Threshold Voltage
100
Limited by R DS(on)*
ID - Drain Current (A)
10
100 μs
1 ms
1
10 ms
100 ms
0.1
1 s, 10 s
DC
TA = 25 °C
Single Pulse
0.01
0.1
BVDSS Limited
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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For technical questions, contact: pmostechsupport@vishay.com
Document Number: 71978
S13-0630-Rev. B, 25-Mar-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si2336DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2.0
6
1.6
Package Limited
4
Power (W)
ID - Drain Current (A)
5
3
1.2
0.8
2
0.4
1
0.0
0
0
25
50
75
100
125
150
25
TC - Case Temperature (°C)
Current Derating*
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 71978
S13-0630-Rev. B, 25-Mar-13
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si2336DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.05
PDM
0.1
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 130 °C/W
3. TJM - T A = PDMZthJA(t)
Single Pulse
0.01
10 -4
4. Surface Mounted
10 -3
10 -2
10 -1
1
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71978.
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For technical questions, contact: pmostechsupport@vishay.com
Document Number: 71978
S13-0630-Rev. B, 25-Mar-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOT-23 (TO-236): 3-LEAD
b
3
E1
1
E
2
e
S
e1
D
0.10 mm
C
0.004"
A2
A
C
q
Gauge Plane
Seating Plane
Seating Plane
C
A1
Dim
0.25 mm
L
L1
MILLIMETERS
Min
INCHES
Max
Min
Max
0.044
A
0.89
1.12
0.035
A1
0.01
0.10
0.0004
0.004
A2
0.88
1.02
0.0346
0.040
b
0.35
0.50
0.014
0.020
c
0.085
0.18
0.003
0.007
D
2.80
3.04
0.110
0.120
E
2.10
2.64
0.083
0.104
E1
1.20
1.40
0.047
e
0.95 BSC
e1
L
1.90 BSC
0.40
L1
q
0.0748 Ref
0.60
0.016
0.64 Ref
S
0.024
0.025 Ref
0.50 Ref
3°
0.055
0.0374 Ref
0.020 Ref
8°
3°
8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
Document Number: 71196
09-Jul-01
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Application Note 826
Vishay Siliconix
0.049
(1.245)
0.029
0.022
(0.559)
(0.724)
0.037
(0.950)
(2.692)
0.106
RECOMMENDED MINIMUM PADS FOR SOT-23
0.053
(1.341)
0.097
(2.459)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index Return to Index
APPLICATION NOTE
Document Number: 72609
Revision: 21-Jan-08
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25
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Revision: 01-Jan-2022
1
Document Number: 91000
