SI2338DS-T1-BE3

Si2338DS www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES SOT-23 (TO-236) • TrenchFET® power MOSFET D 3 • Low on-resistance • 100 % Rg tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 S APPLICATIONS 1 G Top View • DC/DC converters, high speed switching D Marking code: E8 (3) PRODUCT SUMMARY VDS (V) 30 RDS(on) max. () at VGS = 10 V 0.028 RDS(on) max. () at VGS = 4.5 V 0.033 Qg typ. (nC) (1) 4.2 a, e 6 Configuration Single ID (A) G S (2) N-Channel MOSFET ORDERING INFORMATION Package SOT-23 Lead (Pb)-free and halogen-free Si2338DS-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 30 Gate-source voltage VGS ± 20 TC = 70 °C 6e ID TA = 25 °C 5.5 b, c 4.4 b, c TA = 70 °C Pulsed drain current (t = 300 μs) IDM TC = 25 °C Continuous source-drain diode current 2.1 1.1 b, c TC = 25 °C 2.5 TC = 70 °C 1.6 PD TA = 25 °C W 1.3 b, c 0.8 b, c TA = 70 °C Operating junction and storage temperature range A 25 IS TA = 25 °C Maximum power dissipation V 6e TC = 25 °C Continuous drain current (TJ = 150 °C) UNIT TJ, Tstg -55 to +150 Soldering recommendations (peak temperature) °C 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM Maximum junction-to-ambient b, d t5s RthJA 75 100 Maximum junction-to-foot (drain) Steady state RthJF 40 50 UNIT °C/W Notes a. Based on TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 5 s d. Maximum under steady state conditions is 166 °C/W e. Package limited S11-0864-Rev. A, 02-May-11 Document Number: 67877 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2338DS www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 30 - - V - 30 - - -4.8 - Static Drain-source breakdown voltage VDS temperature coefficient VDS/TJ ID = 250 μA mV/°C VGS(th) temperature coefficient VGS(th)/TJ Gate-source threshold voltage VGS(th) VDS = VGS , ID = 250 μA 1.2 - 2.5 V IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA VDS = 30 V, VGS = 0 V - - 1 VDS = 30 V, VGS = 0 V, TJ = 70 °C - - 10 Gate-source leakage Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a μA VDS  5 V, VGS = 10 V 20 - - A VGS = 10 V, ID = 5.5 A - 0.023 0.028 VGS = 4.5 V, ID = 5 A - 0.027 0.033  VDS = 15 V, ID = 5.5 A - 24 - - 424 - VDS = 15 V, VGS = 0 V, f = 1 MHz - 100 - - 42 - - 8.2 13 - 4.2 7 VDS = 15 V, VGS = 4.5 V, ID = 5.5 A - 1.4 - - 1.4 - f = 1 MHz 2.5 12.6 25.2 - 6 12 - 20 30 - 14 21 tf - 10 20 td(on) - 3 6 - 11 20 - 20 30 - 7 14 RDS(on) gfs S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = 15 V, VGS = 10 V, ID = 5.5 A td(on) tr td(off) tr td(off) VDD = 15 V, RL = 3.4  ID  4.4 A, VGEN = 4.5 V, Rg = 1  VDD = 15 V, RL = 3.4 ID  4.4 A, VGEN = 10 V, Rg = 1  tf pF nC  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise Time tb TC = 25 °C - - 2.1 - - 25 IS = 4.4 A, VGS = 0 V - 0.82 1.2 - 13 20 ns IF = 4.4 A, di/dt = 100 A/μs, TJ = 25 °C - 6 12 nC - 8 - - 5 - A V ns Notes a. Pulse test; pulse width 300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing   Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S11-0864-Rev. A, 02-May-11 Document Number: 67877 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2338DS www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 5 25 VGS = 10 V thru 4 V 4 ID - Drain Current (A) ID - Drain Current (A) 20 VGS = 3 V 15 10 TC = 25 °C 2 1 5 TC = 125 °C TC = - 55 °C 0 0 0 0.5 1 1.5 2 0 0.5 1 1.5 2 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics VGS = 4.5 V 450 C - Capacitance (pF) 0.028 VGS = 10 V 0.024 Ciss 300 150 0.020 Coss Crss 0 0.016 0 5 10 15 20 0 25 6 ID - Drain Current (A) 12 18 24 30 VDS - Drain-to-Source Voltage (V) Capacitance On-Resistance vs. Drain Current and Gate Voltage 1.7 10 ID = 5.5 A ID = 5.5 A RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 3 600 0.032 RDS(on) - On-Resistance (Ω) 3 VDS = 8 V 8 6 VDS = 15 V VDS = 24 V 4 2 0 0 2 4 6 8 10 1.5 VGS = 10 V, ID = 5.5 A 1.3 1.1 0.9 VGS = 4.5 V, ID = 5 A 0.7 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S11-0864-Rev. A, 02-May-11 Document Number: 67877 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2338DS www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 0.060 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 5.5 A TJ = 150 °C 1 TJ = 25 °C 0.1 0.045 TJ = 125 °C 0.030 TJ = 25 °C 0.015 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 2 4 8 10 On-Resistance vs. Gate-to-Source Voltage 2.0 10 1.8 8 Power (W) VGS(th) (V) Source-Drain Diode Forward Voltage 1.6 ID = 250 μA 1.4 1.2 1.0 - 50 6 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) 6 4 2 TA = 25 °C 0 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 1000 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power (Junction-to-Ambient) 100 Limited by RDS(on)* ID - Drain Current (A) 10 100 μs 1 ms 1 10 ms 100 ms 0.1 TC = 25 °C Single Pulse 10 s, 1 s DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S11-0864-Rev. A, 02-May-11 Document Number: 67877 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2338DS www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 9 ID - Drain Current (A) 7 5 4 2 0 0 25 50 75 100 125 150 0 25 TC - Case Temperature (°C) Current Derating a 3.0 1.0 2.5 0.8 Power (W) Power (W) 2.0 1.5 0.6 0.4 1.0 0.2 0.5 0.0 0.0 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating, Junction-to-Foot 150 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S11-0864-Rev. A, 02-May-11 Document Number: 67877 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2338DS www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 166 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot                     Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67877. S11-0864-Rev. A, 02-May-11 Document Number: 67877 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS Min INCHES Max Min Max 0.044 A 0.89 1.12 0.035 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 Document Number: 71196 09-Jul-01 www.vishay.com 1 Application Note 826 Vishay Siliconix 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72609 Revision: 21-Jan-08 www.vishay.com 25 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000