SI2342DS-T1-BE3

Si2342DS www.vishay.com Vishay Siliconix N-Channel 8 V (D-S) MOSFET FEATURES SOT-23 (TO-236) • TrenchFET® power MOSFET D 3 • Low on-resistance • 100 % Rg tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 S APPLICATIONS 1 G Top View • Load switches for low voltage gate drive • Low voltage operating circuits Marking code: F2 - Gate drive 1.2 V to 5 V PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 4.5 V RDS(on) max. () at VGS = 2.5 V RDS(on) max. () at VGS = 1.8 V RDS(on) max. () at VGS = 1.5 V RDS(on) max. () at VGS = 1.2 V Qg typ. (nC) ID (A) a, e Configuration D3 8 0.017 0.020 0.022 0.030 0.075 6 6 Single G1 N-Channel MOSFET S2 ORDERING INFORMATION Package Lead (Pb)-free and halogen-free SOT-23 Si2342DS-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous drain current (TJ = 150 °C) Pulsed drain current (t = 300 μs) LIMIT 8 ±5 6e 6e b, 6 c, e 5.8 b, c 30 2.1 1.1 b, c 2.5 1.6 1.3 b, c 0.8 b, c -55 to +150 260 ID IDM TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) Continuous source-drain diode current IS PD TJ, Tstg UNIT V A W °C THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient b, d Maximum junction-to-foot (drain) t 5 s Steady state SYMBOL RthJA RthJF TYPICAL 75 40 MAXIMUM 100 50 UNIT °C/W Notes a. Based on TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 5 s d. Maximum under steady state conditions is 166 °C/W e. Package limited S11-1388-Rev. A, 11-Jul-11 Document Number: 63302 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2342DS www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 8 - - V - 10 - - -2.5 - Static Drain-source breakdown voltage VDS temperature coefficient VDS/TJ VGS(th) temperature coefficient VGS(th)/TJ ID = 250 μA Gate-source threshold voltage mV/°C VGS(th) VDS = VGS , ID = 250 μA 0.35 - 0.8 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 5 V - - ± 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = 8 V, VGS = 0 V - - 1 VDS = 8 V, VGS = 0 V, TJ = 70 °C - - 10 VDS 5 V, VGS = 4.5 V 20 - 0.017 VGS = 4.5 V, ID = 7.2 A - 0.014 VGS = 2.5 V, ID = 6.7 A - 0.016 0.020 VGS = 1.8 V, ID = 6.4 A - 0.018 0.022 VGS = 1.5 V, ID = 5.5 A - 0.020 0.030 VGS = 1.2 V, ID = 1.3 A - 0.025 0.075 VDS = 4 V, ID = 7.2 A - 75 - - 1070 - μA A  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time VDS = 4 V, VGS = 0 V, f = 1 MHz - 385 - - 200 - - 10.5 15.8 - 6 9 VDS = 4 V, VGS = 2.5 V, ID = 7.2 A - 1.6 - - 1 - f = 1 MHz 2.4 12 24 - 6 12 VDS = 4 V, VGS = 4.5 V, ID = 7.2 A td(on) tr td(off) VDD = 4 V, RL = 0.7 , ID  5.8 A, VGEN = 4.5 V, Rg = 1  tf pF nC  - 14 20 - 65 98 - 25 38 - - 2.1 - - 30 - 0.82 1.2 V - 40 60 ns nC ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = 5.8 A, VGS = 0 IF = 5.8 A, di/dt = 100 A/μs, TJ = 25 °C - 17 26 - 15 - - 25 - A ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing   Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S11-1388-Rev. A, 11-Jul-11 Document Number: 63302 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2342DS www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 5 30 VGS = 5 V thru 2 V VGS = 1.5 V 4 ID - Drain Current (A) ID - Drain Current (A) 24 18 12 6 3 TC = 25 °C 2 1 VGS = 1 V TC = 125 °C 0 0 0 0.5 1 1.5 VDS - Drain-to-Source Voltage (V) 2 0 0.3 0.9 1.2 Transfer Characteristics 0.040 1500 0.034 1200 VGS = 1.2 V C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.6 VGS - Gate-to-Source Voltage (V) Output Characteristics 0.028 VGS = 1.5 V VGS = 1.8 V 0.022 VGS = 2.5 V 0.016 Ciss 900 600 Coss 300 Crss VGS = 4.5 V 0.010 0 0 6 12 18 24 30 0 2 4 6 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) 4.5 ID = 7.2 A RDS(on) - On-Resistance (Normalized) ID = 7.2 A VDS = 2 V 3.6 2.7 VDS = 4 V VDS = 6.4 V 1.8 0.9 1.3 VGS = 4.5 V 1.1 0.9 0.7 0 0 8 Capacitance On-Resistance vs. Drain Current and Gate Voltage VGS - Gate-to-Source Voltage (V) TC = - 55 °C 3 6 9 Qg - Total Gate Charge (nC) Gate Charge S11-1388-Rev. A, 11-Jul-11 12 - 50 VGS = 2.5 V - 25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 150 On-Resistance vs. Junction Temperature Document Number: 63302 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2342DS www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 0.03 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID =7.2 A TJ = 150 °C 1 TJ = 25 °C 0.1 0.025 0.02 TJ = 125 °C TJ = 25 °C 0.015 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 1 2 3 4 VGS - Gate-to-Source Voltage (V) 5 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 10 0.7 8 Power (W) VGS(th) (V) 0.55 ID = 250 μA 0.4 6 4 0.25 2 0.1 - 50 - 25 0 25 50 75 100 125 TA = 25 °C 0 0.01 150 0.1 TJ - Temperature (°C) 1 10 100 1000 Time (s) Threshold Voltage Single Pulse Power (Junction-to-Ambient) 100 Limited by RDS(on)* 100 μs ID - Drain Current (A) 10 1 ms 10 ms 1 100 ms 10 s, 1 s 0.1 DC TC = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S11-1388-Rev. A, 11-Jul-11 Document Number: 63302 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2342DS www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 12 ID - Drain Current (A) 9 6 Package Limited 3 0 0 25 50 75 100 125 150 0 25 TC - Case Temperature (°C) Current Derating a 3.0 1.0 2.5 0.8 Power (W) Power (W) 2.0 1.5 0.6 0.4 1.0 0.2 0.5 0.0 0.0 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating, Junction-to-Foot 150 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S11-1388-Rev. A, 11-Jul-11 Document Number: 63302 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2342DS www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 166 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot                     Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63302. S11-1388-Rev. A, 11-Jul-11 Document Number: 63302 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS Min INCHES Max Min Max 0.044 A 0.89 1.12 0.035 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 Document Number: 71196 09-Jul-01 www.vishay.com 1 Application Note 826 Vishay Siliconix 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72609 Revision: 21-Jan-08 www.vishay.com 25 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000