SI2365EDS-T1-GE3

Si2365EDS Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.0320 at VGS = - 4.5 V - 5.9 0.0410 at VGS = - 2.5 V - 5.2 0.0675 at VGS = - 1.8 V - 4.3 a Qg (Typ.) 13.8 nC TO-236 (SOT-23) G APPLICATIONS • Power Management for Portable and Consumer - Load Switches - DC/DC Converters 1 3 S • TrenchFET® Power MOSFET • 100 % Rg Tested • Built-in ESD Protection - Typical ESD Performance 3000 V • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 S D 2 Top View G Si2365EDS (H5)* * Marking Code D Ordering Information: Si2365EDS-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C Limit - 20 ±8 - 5.9 - 4.7 ID Continuous Source-Drain Diode Current - 3.6b, c - 20 - 1.4 IDM Maximum Power Dissipation TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C IS A - 1b, c 1.7 1.1 PD W 1b, c 0.6b, c - 55 to 150 260 TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range V - 4.5b, c TA = 70 °C Pulsed Drain Current (t = 300 µs) Unit Soldering Recommendations (Peak Temperature)d, e °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t5s Symbol RthJA Typical 100 Maximum 130 Steady State RthJF 60 75 Unit °C/W Notes: a. TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 175 °C/W. Document Number: 63199 S13-1505-Rev. C, 01-Jul-13 www.vishay.com For technical questions, contact: pmostechsupport@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2365EDS Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) Gate-Source Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea - 14 ID = - 250 µA VDS = VGS, ID = - 250 µA V - 0.4 -1 VDS = 0 V, VGS = ± 8 V ± 10 VDS = 0 V, VGS = ± 4.5 V ±1 VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C VDS - 5 V, VGS = - 4.5 V RDS(on) mV/°C 2.5 V µA - 10 - 15 A VGS = - 4.5 V, ID = - 4 A 0.0265 0.0320 VGS = - 2.5 V, ID = - 4 A 0.0340 0.0410 VGS = - 1.8 V, ID = - 2 A 0.0465 0.0675 VDS = - 10 V, VGS = - 8 V, ID = - 4.5 A 23.8 36 13.8 21  Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VDS = - 10 V, VGS = - 4.5 V, ID = - 4.5 A 1.9 nC 3 f = 1 MHz td(on) VDD = - 10 V, RL = 2.8  ID  - 3.6 A, VGEN = - 4.5 V, Rg = 1  tr td(off) 2.2 11 22 22 33 21 32 62 93 tf 14 21 td(on) 9 18 6 12 VDD = - 10 V, RL = 2.8  ID  - 3.6 A, VGEN = - 8 V, Rg = 1  tr td(off) tf 65 98 15 23  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current TC = 25 °C IS Pulse Diode Forward Current ISM Body Diode Voltage VSD - 1.4 - 20 IS = - 3.6 A, VGS = 0 V - 0.8 - 1.2 A V Body Diode Reverse Recovery Time trr 13 20 ns Body Diode Reverse Recovery Charge Qrr 5 10 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = - 3.6 A, dI/dt = 100 A/µs, TJ = 25 °C 8 5 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 63199 For technical questions, contact: pmostechsupport@vishay.com 2 S13-1505-Rev. C, 01-Jul-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2365EDS Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10-2 0.050 TJ = 25 °C 10-3 10-4 IGSS - Gate Current (A) IGSS - Gate Current (mA) 0.040 0.030 0.020 TJ = 150 °C 10-5 10-6 TJ = 25 °C 10-7 0.010 10-8 0.000 0 3 6 9 12 10-9 15 0 VGS - Gate-Source Voltage (V) 4 8 12 16 20 VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 15 0.5 VGS = 8 V thru 2 V 0.4 ID - Drain Current (A) ID - Drain Current (A) 12 9 VGS = 1.5 V 6 3 0.3 TC = 25 °C 0.2 TC = 125 °C 0.1 VGS = 1 V TC = - 55 °C 0 0 0 0.5 1 1.5 2 0 0.35 0.7 1.05 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.1 1.4 2000 1500 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.08 VGS = 1.8 V 0.06 VGS = 2.5 V 0.04 1000 500 VGS = 4.5 V 0.02 Ciss Coss 0 Crss 0 0 5 10 15 ID - Drain Current (A) On-Resistance vs. Drain Current 20 0 5 10 15 20 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 63199 www.vishay.com For technical questions, contact: pmostechsupport@vishay.com S13-1505-Rev. C, 01-Jul-13 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2365EDS Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 8 1.5 ID = 4 A 6 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 4.5 A VDS = 10 V VDS = 5 V 4 VDS = 16 V 2 0 VGS = 4.5 V 1.3 VGS = 2.5 V 1.1 0.9 0.7 0 5 10 15 20 25 - 50 - 25 Qg - Total Gate Charge (nC) 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 30 0.7 ID = 250 μA 0.6 VGS(th) (V) Power (W) 20 0.5 0.4 10 0.3 0 0.001 0.01 0.1 1 10 0.2 100 - 50 Time (s) - 25 0 25 50 75 100 125 150 TJ - Temperature (°C) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 0.080 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 4 A 10 TJ = 150 °C 1 TJ = 25 °C 0.1 0.060 0.040 TJ = 125 °C TJ = 25 °C 0.020 0.000 0.0 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) Soure-Drain Diode Forward Voltage 1.5 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com Document Number: 63199 For technical questions, contact: pmostechsupport@vishay.com 4 S13-1505-Rev. C, 01-Jul-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2365EDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 7 100 5.6 Limited by RDS(on)* 10 ID - Drain Current (A) ID - Drain Current (A) 100 μs 1 ms 1 10 ms 100 ms 10 s,1 s DC 0.1 0.01 4.2 2.8 1.4 TA = 25 °C Single Pulse BVDSS Limited 0.001 0 0.1 1 10 100 0 25 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 50 75 100 125 150 125 150 TC - Case Temperature (°C) Current Derating* Safe Operating Area, Junction-to-Ambient 2 0.9 0.7 Power (W) Power (W) 1.5 1 0.5 0.5 0.4 0.2 0.0 0 0 25 50 75 100 TC - Case Temperature (°C) Power Junction-to-Case 125 150 0 25 50 75 100 TA - Ambient Temperature (°C) Power Junction-to-Ambient * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 63199 www.vishay.com For technical questions, contact: pmostechsupport@vishay.com S13-1505-Rev. C, 01-Jul-13 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2365EDS Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 Notes: 0.02 PDM t1 0.01 Single Pulse t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 175 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.001 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63199. www.vishay.com Document Number: 63199 For technical questions, contact: pmostechsupport@vishay.com 6 S13-1505-Rev. C, 01-Jul-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS Min INCHES Max Min Max 0.044 A 0.89 1.12 0.035 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 Document Number: 71196 09-Jul-01 www.vishay.com 1 Application Note 826 Vishay Siliconix 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72609 Revision: 21-Jan-08 www.vishay.com 25 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000