Si2367DS
www.vishay.com
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
FEATURES
SOT-23 (TO-236)
• TrenchFET® power MOSFET
D
3
• 100 % Rg tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
2
S
APPLICATIONS
• Load switch for portable devices
1
G
Top View
• DC/DC converter
S
Marking code: H7
PRODUCT SUMMARY
VDS (V)
G
-20
RDS(on) max. () at VGS = -4.5 V
0.066
RDS(on) max. () at VGS = -2.5 V
0.086
RDS(on) max. () at VGS = -1.8 V
0.130
9
D
d
-3.8
P-Channel MOSFET
Configuration
Single
Qg typ. (nC)
ID (A)
ORDERING INFORMATION
Package
SOT-23
Lead (Pb)-free and halogen-free
Si2367DS-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
-20
Gate-source voltage
VGS
±8
TC = 25 °C
Continuous drain current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
Continuous source-drain diode current
-3
ID
-2.8 a, b
-2.2 a, b
IDM
TC = 25 °C
TA = 25 °C
TC = 70 °C
TA = 25 °C
-1.4
IS
-0.8 a, b
1.7
1.1
PD
W
0.96 a, b
0.62 a, b
TA = 70 °C
Operating junction and storage temperature range
A
-15
TC = 25 °C
Maximum power dissipation
V
-3.8
TA = 70 °C
Pulsed drain current (10 μs width)
UNIT
TJ, Tstg
-55 to +150
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
Maximum junction-to-ambient a, c
t5s
RthJA
100
130
Maximum junction-to-foot (drain)
Steady state
RthJF
60
75
UNIT
°C/W
Notes
a. Surface mounted on 1" x 1" FR4 board
b. t = 5 s
c. Maximum under steady state conditions is 175 °C/W
d. TC = 25 °C
S09-1218-Rev. A, 29-Jun-09
Document Number: 65015
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si2367DS
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = -250 μA
-20
-
-
V
-
-20
-
-
-2.5
-
VDS = VGS, ID = -250 μA
-0.4
-
-1
V
nA
Static
Drain-source breakdown voltage
VDS temperature coefficient
VDS/TJ
VGS(th) temperature coefficient
VGS(th)/TJ
Gate-source threshold voltage
VGS(th)
Gate-source leakage
IGSS
Zero gate voltage drain current
IDSS
On-state drain current a
ID(on)
Drain-source on-state resistance a
Forward transconductance a
ID = -250 μA
RDS(on)
gfs
VDS = 0 V, VGS = ± 8 V
-
-
± 100
VDS = -20 V, VGS = 0 V
-
-
-1
VDS = -20 V, VGS = 0 V, TJ = 55 °C
-
-
-10
VDS -5 V, VGS = -4.5 V
-5
-
-
VGS = -4.5 V, ID = -2.5 A
-
0.055
0.066
VGS = -2.5 V, ID = -2 A
-
0.071
0.086
VGS = -1.8 V, ID = -1.5 A
-
0.100
0.130
VDS = -10 V, ID = -2.5 A
-
7.5
-
-
561
-
VDS = -10 V, VGS = 0 V, f = 1 MHz
-
112
-
-
89
-
mV/°C
μA
A
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Gate resistance
Rg
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDS = -10 V, VGS = -8 V, ID = -2.5 A
-
15
23
-
9
13.5
VDS = -10 V, VGS = -4.5 V, ID = -2.5 A
-
1
-
-
2.5
-
f = 1 MHz
2
10
20
-
20
40
-
20
40
-
40
70
tf
-
10
20
td(on)
-
8
16
td(on)
tr
td(off)
tr
td(off)
VDD = -10 V, RL = 5 ,
ID -2 A, VGEN = -4.5 V, Rg = 1
VDD = -10 V, RL = 5 ,
ID -2 A, VGEN = -8 V, Rg = 1
tf
pF
nC
ns
-
9
18
-
35
65
-
9
18
-
-
-1.4
-
-
-15
-
-0.79
-1.2
V
-
21
35
ns
-
15
25
nC
-
9
-
-
12
-
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
Pulse diode forward current
ISM
Body diode voltage
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
TC = 25 °C
IS = -2 A, VGS = 0 V
IF = -2 A, di/dt = 100 A/μs,
TJ = 25 °C
A
ns
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S09-1218-Rev. A, 29-Jun-09
Document Number: 65015
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si2367DS
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
15
2.5
V GS = 5 V thru 2.5 V
2.0
9
I D - Drain Current (A)
I D - Drain Current (A)
12
V GS = 2 V
6
1.5
1.0
T C = 25 °C
V GS = 1.5 V
3
0.5
T C = 125 °C
V GS = 0.5 V, 1 V
0.6
1.2
1.8
2.4
0.4
0.8
1.2
1.6
V DS - Drain-to-Source Voltage (V)
V GS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.20
1200
0.16
960
0.12
T C = -55 °C
0.0
0.0
3.0
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
0
0.0
V GS = 1.8 V
0.08
V GS = 2.5 V
0.04
V GS = 4.5 V
2.0
720
Ciss
480
240
Coss
Crss
0.00
0.0
0
1.6
3.2
4.8
6.4
8.0
0
8
12
16
V DS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
8.0
R DS(on) - On-Resistance (Normalized)
6.4
V DS = 5 V
4.8
V DS = 10 V
3.2
V DS = 15 V
1.6
0.0
0.0
20
1.6
ID = 2.5 A
VGS - Gate-to-Source Voltage (V)
4
ID - Drain Current (A)
ID = -2.5 A
1.4
V GS = -4.5 V
1.2
V GS = -1.8 V
1.0
0.8
0.6
3.4
6.8
10.2
Qg - Total Gate Charge (nC)
Gate Charge
S09-1218-Rev. A, 29-Jun-09
13.6
17.0
-50
-25
0
25
50
75
100
125
150
T J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 65015
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si2367DS
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.30
10
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 2.5 A
1
0.1
T J = 25 °C
T J = 150 °C
0.01
0.24
0.18
0.12
T J = 125 °C
0.06
T J = 25 °C
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
0
1.2
1
2
3
4
5
V SD - Source-to-Drain Voltage (V)
V GS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.4
30
0.3
24
0.2
Power (W)
VGS(th) Variance (V)
ID = -250 μA
ID = -5 mA
0.1
18
12
0.0
6
-0.1
-0.2
-50
-25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
Time (s)
T J - Temperature (°C)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by R DS(on)*
I D - Drain Current (A)
10
1 ms
1
10 ms
0.1
T A = 25 °C
single pulse
0.01
0.01
BVDSS limited
100 ms
1 s, 10 s
DC
100
0.1
1
10
V DS - Drain-to-Source Voltage (V)
* V GS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
S09-1218-Rev. A, 29-Jun-09
Document Number: 65015
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si2367DS
www.vishay.com
Vishay Siliconix
4.5
2.0
3.6
1.6
2.7
1.2
Power (W)
I D - Drain Current (A)
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1.8
0.9
0.8
0.4
0.0
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
T C - Case Temperature (°C)
T C - Case Temperature (°C)
Current Derating a
Power Derating, Junction-to-Foot
150
1.0
Power (W)
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S09-1218-Rev. A, 29-Jun-09
Document Number: 65015
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si2367DS
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty cycle, D =
0.02
t1
t2
2. Per unit base = R thJA = 175 °C/W
3. T JM - TA = PDMZthJA(t)
Single pulse
0.01
10 -4
4. Surface mounted
10 -3
10 -2
10 -1
1
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65015.
S09-1218-Rev. A, 29-Jun-09
Document Number: 65015
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOT-23 (TO-236): 3-LEAD
b
3
E1
1
E
2
e
S
e1
D
0.10 mm
C
0.004"
A2
A
C
q
Gauge Plane
Seating Plane
Seating Plane
C
A1
Dim
0.25 mm
L
L1
MILLIMETERS
Min
INCHES
Max
Min
Max
0.044
A
0.89
1.12
0.035
A1
0.01
0.10
0.0004
0.004
A2
0.88
1.02
0.0346
0.040
b
0.35
0.50
0.014
0.020
c
0.085
0.18
0.003
0.007
D
2.80
3.04
0.110
0.120
E
2.10
2.64
0.083
0.104
E1
1.20
1.40
0.047
e
0.95 BSC
e1
L
1.90 BSC
0.40
L1
q
0.0748 Ref
0.60
0.016
0.64 Ref
S
0.024
0.025 Ref
0.50 Ref
3°
0.055
0.0374 Ref
0.020 Ref
8°
3°
8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
Document Number: 71196
09-Jul-01
www.vishay.com
1
Application Note 826
Vishay Siliconix
0.049
(1.245)
0.029
0.022
(0.559)
(0.724)
0.037
(0.950)
(2.692)
0.106
RECOMMENDED MINIMUM PADS FOR SOT-23
0.053
(1.341)
0.097
(2.459)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index Return to Index
APPLICATION NOTE
Document Number: 72609
Revision: 21-Jan-08
www.vishay.com
25
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Revision: 01-Jan-2022
1
Document Number: 91000