SI2371EDS-T1-BE3

Si2371EDS Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.045 at VGS = - 10 V - 4.8 0.053 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.6 a Qg (Typ.) 10.6 nC TO-236 (SOT-23) G APPLICATIONS • Power Management for Portable and Consumer - Load Switches - OVP (Over Voltage Protection) Switch 1 3 S • TrenchFET® Power MOSFET • 100 % Rg Tested • Built-in ESD Protection - Typical ESD Performance 3000 V • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 S D 2 Top View G Si2371EDS (E6)* * Marking Code D Ordering Information: Si2371EDS-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID IDM Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current Maximum Power Dissipation TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IS PD TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Limit - 30 ± 12 - 4.8 - 3.8 - 3.7b,c - 2.9b,c - 20 - 1.4 Temperature)d, e Unit V A - 1b,c 1.7 1.1 1b,c 0.6b,c - 55 to 150 260 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t5s Steady State Symbol RthJA RthJF Typical 100 60 Maximum 130 75 Unit °C/W Notes: a. TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 175 °C/W. Document Number: 63924 S13-0633-Rev. A, 25-Mar-13 www.vishay.com For technical questions, contact: pmostechsupport@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2371EDS Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea ID = - 250 µA VDS = VGS, ID = - 250 µA IGSS IDSS RDS(on) mV/°C 2.2 - 0.6 - 1.5 VDS = 0 V, VGS = ± 12 V ± 10 VDS = 0 V, VGS = ± 4.5 V ±1 VDS = - 30 V, VGS = 0 V -1 VDS = - 30 V, VGS = 0 V, TJ = 55 °C - 10 VDS - 5 V, VGS = - 10 V ID(on) V - 24 - 15 V µA A VGS = - 10 V, ID = - 3.7 A 0.037 0.045 VGS = - 4.5 V, ID = - 2 A 0.044 0.053 VGS = - 2.5 V, ID = - 2 A 0.066 0.080  Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VDS = - 15 V, VGS = - 10 V, ID = - 3.7 A VDS = - 15 V, VGS = - 4.5 V, ID = - 3.7 A 22.8 35 10.6 16 1.7 nC 2.6 f = 1 MHz td(on) VDD = - 15 V, RL = 5.2  ID  - 2.9 A, VGEN = - 4.5 V, Rg = 1  tr td(off) 2.2 11 22 28 42 65 98 47 71 tf 62 93 td(on) 7 14 8 16 VDD = - 15 V, RL = 5.2  ID  - 2.9 A, VGEN = - 10 V, Rg = 1  tr td(off) tf 52 78 52 78  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current TC = 25 °C IS Pulse Diode Forward Current ISM Body Diode Voltage VSD - 1.4 - 20 IS = - 2.9 A, VGS = 0 V A - 0.8 - 1.2 Body Diode Reverse Recovery Time trr 13 20 ns Body Diode Reverse Recovery Charge Qrr 6 12 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = - 2.9 A, dI/dt = 100 A/µs, TJ = 25 °C 9 4 V ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 63924 For technical questions, contact: pmostechsupport@vishay.com 2 S13-0633-Rev. A, 25-Mar-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2371EDS Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10-2 0.030 TJ = 25 °C 10-3 IGSS - Gate Current (A) IGSS - Gate Current (mA) 0.024 0.018 0.012 10-4 TJ = 150 °C 10-5 10-6 TJ = 25 °C 10-7 0.006 10-8 10-9 0.000 0 4 8 12 0 16 4 8 VGS - Gate-Source Voltage (V) Gate Current vs. Gate-Source Voltage 16 20 Gate Current vs. Gate-Source Voltage 1 15 VGS = 10 V thru 4 V VGS = 3 V 12 0.8 VGS = 2.5 ID - Drain Current (A) ID - Drain Current (A) 12 VGS - Gate-to-Source Voltage (V) 9 VGS = 2 V 6 0.6 TC = 25 °C 0.4 3 0.2 0 0 TC = 125 °C TC = - 55 °C 0 0.5 1 1.5 2 0 1 1.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.1 2 1500 0.08 1200 VGS = 2.5 V C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.5 VDS - Drain-to-Source Voltage (V) 0.06 VGS = 4.5 V 0.04 VGS = 10 V 0.02 Ciss 900 600 300 Coss 0 Crss 0 0 5 10 15 ID - Drain Current (A) On-Resistance vs. Drain Current 20 0 5 10 15 20 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 63924 www.vishay.com For technical questions, contact: pmostechsupport@vishay.com S13-0633-Rev. A, 25-Mar-13 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2371EDS Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.5 10 VGS = 10 V, 3.7 A RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 3.7 A VDS = 15 V 8 6 VDS = 8 V VDS = 24 V 4 2 0 0 5 10 15 20 VGS = 4.5 V, 2 A 1.3 VGS = 2.5 V, 2 A 1.1 0.9 0.7 25 - 50 - 25 Qg - Total Gate Charge (nC) 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 30 ID = 250 μA 1.05 VGS(th) (V) Power (W) 20 0.9 10 0.75 0 0.001 0.01 0.1 1 10 0.6 100 - 50 Time (s) - 25 0 25 50 75 100 125 150 TJ - Temperature (°C) Single Pulse Power, Junction-to-Ambient Threshold Voltage 0.150 100 ID = 4 A RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.120 10 TJ = 150 °C TJ = 25 °C 1 0.090 TJ = 125 °C 0.060 TJ = 25 °C 0.030 0.1 0.000 0.0 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Soure-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 10 www.vishay.com Document Number: 63924 For technical questions, contact: pmostechsupport@vishay.com 4 S13-0633-Rev. A, 25-Mar-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2371EDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 5.6 Limited by RDS(on)* 10 1 1 ms 10 ms 0.1 100 ms 10s, 1 s ID - Drain Current (A) ID - Drain Current (A) 4.2 100 μs DC 2.8 1.4 0.01 TA= 25 °C BVDSS Limited 0.001 0 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* Safe Operating Area, Junction-to-Ambient 0.9 2 0.7 Power (W) Power (W) 1.5 1 0.5 0.4 0.5 0.2 0 0.0 0 25 50 75 100 TC - Case Temperature (°C) Power Junction-to-Case 125 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Junction-to-Ambient * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 63924 www.vishay.com For technical questions, contact: pmostechsupport@vishay.com S13-0633-Rev. A, 25-Mar-13 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2371EDS Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 Notes: 0.02 PDM t1 0.01 Single Pulse t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 175 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.001 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63924. www.vishay.com Document Number: 63924 For technical questions, contact: pmostechsupport@vishay.com 6 S13-0633-Rev. A, 25-Mar-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS Min INCHES Max Min Max 0.044 A 0.89 1.12 0.035 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 Document Number: 71196 09-Jul-01 www.vishay.com 1 Application Note 826 Vishay Siliconix 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72609 Revision: 21-Jan-08 www.vishay.com 25 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000