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SI2371EDS-T1-GE3

SI2371EDS-T1-GE3

  • 厂商:

    TFUNK(威世)

  • 封装:

    SOT-23

  • 描述:

    MOS管 P-Channel VDS=30V VGS=±12V ID=3.7A RDS(ON)=45mΩ@10V SOT23-3

  • 数据手册
  • 价格&库存
SI2371EDS-T1-GE3 数据手册
Si2371EDS Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.045 at VGS = - 10 V - 4.8 0.053 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.6 a Qg (Typ.) 10.6 nC TO-236 (SOT-23) G APPLICATIONS • Power Management for Portable and Consumer - Load Switches - OVP (Over Voltage Protection) Switch 1 3 S • TrenchFET® Power MOSFET • 100 % Rg Tested • Built-in ESD Protection - Typical ESD Performance 3000 V • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 S D 2 Top View G Si2371EDS (E6)* * Marking Code D Ordering Information: Si2371EDS-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID IDM Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current Maximum Power Dissipation TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IS PD TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Limit - 30 ± 12 - 4.8 - 3.8 - 3.7b,c - 2.9b,c - 20 - 1.4 Temperature)d, e Unit V A - 1b,c 1.7 1.1 1b,c 0.6b,c - 55 to 150 260 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t5s Steady State Symbol RthJA RthJF Typical 100 60 Maximum 130 75 Unit °C/W Notes: a. TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 175 °C/W. Document Number: 63924 S13-0633-Rev. A, 25-Mar-13 www.vishay.com For technical questions, contact: pmostechsupport@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2371EDS Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea ID = - 250 µA VDS = VGS, ID = - 250 µA IGSS IDSS RDS(on) mV/°C 2.2 - 0.6 - 1.5 VDS = 0 V, VGS = ± 12 V ± 10 VDS = 0 V, VGS = ± 4.5 V ±1 VDS = - 30 V, VGS = 0 V -1 VDS = - 30 V, VGS = 0 V, TJ = 55 °C - 10 VDS - 5 V, VGS = - 10 V ID(on) V - 24 - 15 V µA A VGS = - 10 V, ID = - 3.7 A 0.037 0.045 VGS = - 4.5 V, ID = - 2 A 0.044 0.053 VGS = - 2.5 V, ID = - 2 A 0.066 0.080  Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VDS = - 15 V, VGS = - 10 V, ID = - 3.7 A VDS = - 15 V, VGS = - 4.5 V, ID = - 3.7 A 22.8 35 10.6 16 1.7 nC 2.6 f = 1 MHz td(on) VDD = - 15 V, RL = 5.2  ID  - 2.9 A, VGEN = - 4.5 V, Rg = 1  tr td(off) 2.2 11 22 28 42 65 98 47 71 tf 62 93 td(on) 7 14 8 16 VDD = - 15 V, RL = 5.2  ID  - 2.9 A, VGEN = - 10 V, Rg = 1  tr td(off) tf 52 78 52 78  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current TC = 25 °C IS Pulse Diode Forward Current ISM Body Diode Voltage VSD - 1.4 - 20 IS = - 2.9 A, VGS = 0 V A - 0.8 - 1.2 Body Diode Reverse Recovery Time trr 13 20 ns Body Diode Reverse Recovery Charge Qrr 6 12 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = - 2.9 A, dI/dt = 100 A/µs, TJ = 25 °C 9 4 V ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 63924 For technical questions, contact: pmostechsupport@vishay.com 2 S13-0633-Rev. A, 25-Mar-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2371EDS Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10-2 0.030 TJ = 25 °C 10-3 IGSS - Gate Current (A) IGSS - Gate Current (mA) 0.024 0.018 0.012 10-4 TJ = 150 °C 10-5 10-6 TJ = 25 °C 10-7 0.006 10-8 10-9 0.000 0 4 8 12 0 16 4 8 VGS - Gate-Source Voltage (V) Gate Current vs. Gate-Source Voltage 16 20 Gate Current vs. Gate-Source Voltage 1 15 VGS = 10 V thru 4 V VGS = 3 V 12 0.8 VGS = 2.5 ID - Drain Current (A) ID - Drain Current (A) 12 VGS - Gate-to-Source Voltage (V) 9 VGS = 2 V 6 0.6 TC = 25 °C 0.4 3 0.2 0 0 TC = 125 °C TC = - 55 °C 0 0.5 1 1.5 2 0 1 1.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.1 2 1500 0.08 1200 VGS = 2.5 V C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.5 VDS - Drain-to-Source Voltage (V) 0.06 VGS = 4.5 V 0.04 VGS = 10 V 0.02 Ciss 900 600 300 Coss 0 Crss 0 0 5 10 15 ID - Drain Current (A) On-Resistance vs. Drain Current 20 0 5 10 15 20 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 63924 www.vishay.com For technical questions, contact: pmostechsupport@vishay.com S13-0633-Rev. A, 25-Mar-13 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2371EDS Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.5 10 VGS = 10 V, 3.7 A RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 3.7 A VDS = 15 V 8 6 VDS = 8 V VDS = 24 V 4 2 0 0 5 10 15 20 VGS = 4.5 V, 2 A 1.3 VGS = 2.5 V, 2 A 1.1 0.9 0.7 25 - 50 - 25 Qg - Total Gate Charge (nC) 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 30 ID = 250 μA 1.05 VGS(th) (V) Power (W) 20 0.9 10 0.75 0 0.001 0.01 0.1 1 10 0.6 100 - 50 Time (s) - 25 0 25 50 75 100 125 150 TJ - Temperature (°C) Single Pulse Power, Junction-to-Ambient Threshold Voltage 0.150 100 ID = 4 A RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.120 10 TJ = 150 °C TJ = 25 °C 1 0.090 TJ = 125 °C 0.060 TJ = 25 °C 0.030 0.1 0.000 0.0 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Soure-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 10 www.vishay.com Document Number: 63924 For technical questions, contact: pmostechsupport@vishay.com 4 S13-0633-Rev. A, 25-Mar-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2371EDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 5.6 Limited by RDS(on)* 10 1 1 ms 10 ms 0.1 100 ms 10s, 1 s ID - Drain Current (A) ID - Drain Current (A) 4.2 100 μs DC 2.8 1.4 0.01 TA= 25 °C BVDSS Limited 0.001 0 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* Safe Operating Area, Junction-to-Ambient 0.9 2 0.7 Power (W) Power (W) 1.5 1 0.5 0.4 0.5 0.2 0 0.0 0 25 50 75 100 TC - Case Temperature (°C) Power Junction-to-Case 125 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Junction-to-Ambient * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 63924 www.vishay.com For technical questions, contact: pmostechsupport@vishay.com S13-0633-Rev. A, 25-Mar-13 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2371EDS Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 Notes: 0.02 PDM t1 0.01 Single Pulse t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 175 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.001 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63924. www.vishay.com Document Number: 63924 For technical questions, contact: pmostechsupport@vishay.com 6 S13-0633-Rev. A, 25-Mar-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS Min INCHES Max Min Max 0.044 A 0.89 1.12 0.035 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 Document Number: 71196 09-Jul-01 www.vishay.com 1 AN807 Vishay Siliconix Mounting LITTLE FOOTR SOT-23 Power MOSFETs Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices. Leadframe materials and design, molding compounds, and die attach materials have been changed, while the footprint of the packages remains the same. See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/doc?72286), for the basis of the pad design for a LITTLE FOOT SOT-23 power MOSFET footprint . In converting this footprint to the pad set for a power device, designers must make two connections: an electrical connection and a thermal connection, to draw heat away from the package. ambient air. This pattern uses all the available area underneath the body for this purpose. 0.114 2.9 0.081 2.05 0.150 3.8 0.059 1.5 0.0394 1.0 0.037 0.95 FIGURE 1. Footprint With Copper Spreading The electrical connections for the SOT-23 are very simple. Pin 1 is the gate, pin 2 is the source, and pin 3 is the drain. As in the other LITTLE FOOT packages, the drain pin serves the additional function of providing the thermal connection from the package to the PC board. The total cross section of a copper trace connected to the drain may be adequate to carry the current required for the application, but it may be inadequate thermally. Also, heat spreads in a circular fashion from the heat source. In this case the drain pin is the heat source when looking at heat spread on the PC board. Figure 1 shows the footprint with copper spreading for the SOT-23 package. This pattern shows the starting point for utilizing the board area available for the heat spreading copper. To create this pattern, a plane of copper overlies the drain pin and provides planar copper to draw heat from the drain lead and start the process of spreading the heat so it can be dissipated into the Document Number: 70739 26-Nov-03 Since surface-mounted packages are small, and reflow soldering is the most common way in which these are affixed to the PC board, “thermal” connections from the planar copper to the pads have not been used. Even if additional planar copper area is used, there should be no problems in the soldering process. The actual solder connections are defined by the solder mask openings. By combining the basic footprint with the copper plane on the drain pins, the solder mask generation occurs automatically. A final item to keep in mind is the width of the power traces. The absolute minimum power trace width must be determined by the amount of current it has to carry. For thermal reasons, this minimum width should be at least 0.020 inches. The use of wide traces connected to the drain plane provides a low-impedance path for heat to move away from the device. www.vishay.com 1 Application Note 826 Vishay Siliconix 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72609 Revision: 21-Jan-08 www.vishay.com 25 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2019 1 Document Number: 91000
SI2371EDS-T1-GE3 价格&库存

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SI2371EDS-T1-GE3
  •  国内价格
  • 1+0.72449
  • 100+0.67619
  • 300+0.62789
  • 500+0.57960
  • 2000+0.55545
  • 5000+0.54096

库存:0