SI2374DS-T1-BE3

Si2374DS www.vishay.com Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) MAX. ID (A) d 0.030 at VGS = 4.5 V 5.9 0.034 at VGS = 2.5 V 5.5 0.041 at VGS = 1.8 V 5 • TrenchFET® power MOSFET Qg (TYP.) • 100 % Rg tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 7.7 nC APPLICATIONS SOT-23 (TO-236) D • Load switch D 3 • Power management G 2 S 1 G Top View S N-Channel MOSFET Marking Code: F5 Ordering Information: Si2374DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 TC = 25 °C 4.7 ID TA = 25 °C 4.5 a, b 3.6 a, b TA = 70 °C IDM Pulsed Drain Current (t = 100 μs) TC = 25 °C Continuous Source-Drain Diode Current 1.4 0.8 a, b TC = 25 °C 1.7 TC = 70 °C 1.1 PD TA = 25 °C W 0.96 a, b 0.62 a, b TA = 70 °C Operating Junction and Storage Temperature Range A 25 IS TA = 25 °C Maximum Power Dissipation V 5.9 TC = 70 °C Continuous Drain Current (TJ = 150 °C) UNIT TJ, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a, c Maximum Junction-to-Foot (Drain) SYMBOL TYPICAL MAXIMUM t≤5s RthJA 100 130 Steady State RthJF 60 75 UNIT °C/W Notes a. Surface mounted on 1" x 1" FR4 board. b. t = 5 s. c. Maximum under steady state conditions is 175 °C/W. d. TC = 25 °C. S14-0768-Rev. A, 14-Apr-14 Document Number: 62947 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2374DS www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 20 - - V - 34 - - -5 - Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ ID = 250 μA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 μA 0.4 - 1 V IGSS VDS = 0 V, VGS = ± 8 V - - ± 100 nA VDS = 20 V, VGS = 0 V - - 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C - - 10 VDS ≥ 5 V, VGS = 10 V 10 - - VGS = 4.5 V, ID = 4 A - 0.025 0.030 VGS = 2.5 V, ID = 3 A - 0.028 0.034 VGS = 1.8 V, ID = 2 A - 0.031 0.041 VDS = 10 V, ID = 4 A - 29 - Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Current a ID(on) Drain-Source On-State Resistance a Forward Transconductance a Dynamic RDS(on) gfs μA A Ω S b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Rg - 735 - VDS = 10 V, VGS = 0 V, f = 1 MHz - 110 - - 40 - VDS = 10 V, VGS = 10 V, ID = 4.5 A - 13.4 20 - 7.7 12 VDS = 10 V, VGS = 4.5 V, ID = 4.5 A - 1 - - 1 - 0.12 0.6 1.2 - 4 8 - 22 33 f = 1 MHz td(on) VDD = 10 V, RL = 2.8 Ω ID ≅ 3.6 A, VGEN = 8 V, Rg = 1 Ω tr td(off) - 16 24 tf - 9 18 td(on) - 10 20 VDD = 10 V, RL = 2.8 Ω ID ≅ 3.6 A, VGEN = 4.5 V, Rg = 1 Ω tr td(off) tf - 23 35 - 16 24 - 10 20 - - 1.4 - - 25 - 0.8 1.2 pF nC Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current (t = 100 μs) ISM Body Diode Voltage VSD TC = 25 °C IS = 3.6 A, VGS = 0 V A V Body Diode Reverse Recovery Time trr - 13 20 ns Body Diode Reverse Recovery Charge Qrr - 6 12 nC Reverse Recovery Fall Time ta - 9 - Reverse Recovery Rise Time tb - 4 - IF = 3.6 A, dI/dt = 100 A/μs, TJ = 25 °C ns Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-0768-Rev. A, 14-Apr-14 Document Number: 62947 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2374DS www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted) 5 25 VGS = 5V thru 2V VGS = 1.8 V 4 ID - Drain Current (A) ID - Drain Current (A) 20 15 VGS = 1.5 V 10 3 TC = 25 °C 2 TC = 125 °C 1 5 TC = - 55 °C 0 0 0 0.5 1 1.5 VDS - Drain-to-Source Voltage (V) 0 2 0.3 0.05 1000 0.04 750 VGS = 2.5 V 0.03 VGS =4.5V 0.02 0.9 1.2 1.5 Transfer Characteristics C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Output Characteristics VGS = 1.8 V 0.6 VGS - Gate-to-Source Voltage (V) Ciss 500 250 Coss Crss 0 0.01 0 5 10 15 20 25 0 10 15 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 20 1.6 8 VGS = 4.5 V, 4A / 2.5V, 3A RDS(on) - On-Resistance (Normalized) VDS = 5 V ID = 4.5 A VGS - Gate-to-Source Voltage (V) 5 ID - Drain Current (A) 6 VDS = 10 V 4 VDS = 16 V 2 0 0 3 6 9 12 Qg - Total Gate Charge (nC) Gate Charge S14-0768-Rev. A, 14-Apr-14 15 1.35 VGS = 1.8 V, 2A 1.1 0.85 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 62947 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2374DS www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted) 100 0.070 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 4 A TJ = 150 °C 10 TJ = 25 °C 1 0.1 0.0 0.055 0.040 TJ = 125 °C TJ = 25 °C 0.025 0.010 0.3 0.6 0.9 1.2 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 30 0.8 ID = 250 μA 0.65 Power (W) VGS(th) (V) 20 0.5 10 0.35 0.2 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power (Junction-to-Ambient) 100 100 Limited by IDM Limited by RDS(on)* ID - Drain Current (A) 10 100 μs 1 1 ms 10 ms 100 ms 0.1 TA = 25 °C 0.01 0.1 10 s, 1 s DC BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S14-0768-Rev. A, 14-Apr-14 Document Number: 62947 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2374DS www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted) 6.5 ID - Drain Current (A) 5.2 3.9 2.6 1.3 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 2 0.9 0.72 Power (W) Power (W) 1.5 1 0.54 0.36 0.5 0.18 0 0 0 25 50 75 100 TC - Case Temperature (°C) Power Junction-to-Foot 125 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Junction-to-Ambient * The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S14-0768-Rev. A, 14-Apr-14 Document Number: 62947 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2374DS www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 175 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 4. Surface Mounted 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62947. S14-0768-Rev. A, 14-Apr-14 Document Number: 62947 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS Min INCHES Max Min Max 0.044 A 0.89 1.12 0.035 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 Document Number: 71196 09-Jul-01 www.vishay.com 1 Application Note 826 Vishay Siliconix 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72609 Revision: 21-Jan-08 www.vishay.com 25 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000