SI2377EDS-T1-BE3

Si2377EDS www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES SOT-23 (TO-236) • TrenchFET® power MOSFET D 3 • 100% Rg tested • Typical ESD performance 2000 V • Built in ESD protection with Zener Diode 2 S • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1 G Top View APPLICATIONS Marking Code: P6 PRODUCT SUMMARY VDS (V) -20 RDS(on) max. (Ω) at VGS = -4.5 V 0.061 RDS(on) max. (Ω) at VGS = -2.5 V 0.080 RDS(on) max. (Ω) at VGS = -1.8 V 0.110 RDS(on) max. (Ω) at VGS = -1.5 V 0.165 Qg typ. (nC) 7.6 ID (A) a -4.4 Configuration S • Load switch for portable devices G R P-Channel MOSFET D Single ORDERING INFORMATION Package SOT-23 Lead (Pb)-free and halogen-free Si2377EDS-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS -20 Gate-source voltage VGS ±8 TC = 25 °C Continuous drain current (TJ = 150 °C) TC = 70 °C TA = 25 °C 3.5 ID -3.7 b, c -2.9 b, c Continuous source-drain diode current Maximum power dissipation IDM TC = 25 °C TA = 25 °C -20 IS -1 b, c TC = 25 °C 1.8 1.1 PD W 1.25 b, c 0.8 b, c TA = 70 °C Operating junction and storage temperature range A -1.5 TC = 70 °C TA = 25 °C V -4.4 TA = 70 °C Pulsed drain current UNIT TJ, Tstg -55 to +150 Soldering recommendations (peak temperature) d, e °C 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM Maximum junction-to-ambient b, d t≤5s RthJA 80 100 Maximum junction-to-foot (drain) Steady state RthJF 55 70 UNIT °C/W Notes a. TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 5 s d. Maximum under steady state conditions is 130 °C/W S10-0542-Rev. A, 08-Mar-10 Document Number: 65905 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2377EDS www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = -250 μA -20 - - - V -13 - - 2.5 - VDS = VGS, ID = -250 μA -0.4 - -1 VDS = 0 V, VGS = ± 8 V - - ±6 Static Drain-source breakdown voltage ΔVDS/TJ VDS temperature coefficient VGS(th) temperature coefficient ΔVGS(th)/TJ Gate-source threshold voltage VGS(th) Gate-source leakage Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a Forward transconductance a IGSS IDSS ID(on) RDS(on) gfs ID = -250 μA VDS = 0 V, VGS = ± 4.5 V - - ± 0.5 VDS = -20 V, VGS = 0 V - - -1 VDS = -20 V, VGS = 0 V, TJ = 55 °C - - -10 VDS ≤ -5 V, VGS = -4.5 V -15 - - VGS = -4.5 V, ID = -3.2 A - 0.050 0.061 VGS = -2.5 V, ID = -2.8 A - 0.065 0.080 VGS = -1.8 V, ID = -1.5 A - 0.090 0.110 VGS = -1.5 V, ID = -0.5 A - 0.110 0.165 VDS = -10 V, ID = -3.2 A - 12 - VDS = -10 V, VGS = -8 V, ID = -5.3 A - 14 21 - 7.6 12 VDS = -10 V, VGS = -4.5 V, ID = -5.3 A - 0.8 - - 3.1 - f = 1 MHz 0.4 2 4 - 0.2 0.3 - 1 1.5 6 mV/°C V μA A Ω S Dynamic b Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) VDD = -10 V, RL = 2.3 Ω ID ≅ -4.3 A, VGEN = -4.5 V, Rg = 1 Ω - 4 tf - 2 3 td(on) - 0.09 0.14 - 0.4 0.6 - 5.2 7.8 - 2.3 3.5 tr td(off) VDD = -10 V, RL = 2.3 Ω ID ≅ -4.3 A, VGEN = -8 V, Rg = 1 Ω tf nC kΩ μs Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = -3 A, VGS = 0 V IF = -3 A, di/dt = 100 A/μs, TJ = 25 °C - - -1.5 - - -20 - -0.8 -1.2 V - 30 60 ns - 20 40 nC - 13 - - 17 - A ns Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2% b. Guaranteed by design, not subject to production testing Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S10-0542-Rev. A, 08-Mar-10 Document Number: 65905 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2377EDS www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10-2 1.5 10-3 TJ = 25 °C IGSS - Gate Current (A) IGSS - Gate Current (mA) 1.2 0.9 0.6 10-4 TJ = 150 °C 10-5 TJ = 25 °C 10-6 10-7 0.3 10-8 0.0 0 3 6 9 12 10-9 15 0 6 9 12 VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 20 15 10 16 8 VGS = 5 V thru 2.5 V I D - Drain Current (A) I D - Drain Current (A) 3 VGS - Gate-to-Source Voltage (V) 12 VGS = 2 V 8 VGS = 1.5 V 4 6 4 TC = 25 °C 2 TC = 125 °C VGS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 TC = - 55 °C 0 0.0 3.0 0.8 1.2 1.6 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.21 2.0 8 VGS - Gate-to-Source Voltage (V) 0.18 R DS(on) - On-Resistance (Ω) 0.4 VDS - Drain-to-Source Voltage (V) 0.15 VGS = 1.8 V 0.12 VGS = 1.5 V 0.09 VGS = 2.5 V 0.06 0.03 ID = 5.3 A VDS = 10 V 6 VDS = 5 V VDS = 16 V 4 2 VGS = 4.5 V 0.00 0 0 4 8 12 16 ID - Drain Current (A) On-Resistance vs. Drain Current S10-0542-Rev. A, 08-Mar-10 20 0 3 6 9 12 15 Qg - Total Gate Charge (nC) Gate Charge Document Number: 65905 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2377EDS www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 1.5 1.4 I S - Source Current (A) (Normalized) R DS(on) - On-Resistance VGS = 4.5 V, 2.5 V; ID = 3.2 A 1.3 1.2 1.1 VGS = 1.8 V; ID = 1.5 A 1.0 0.9 TJ = 150 °C 10 TJ = 25 °C 1 0.8 0.7 - 50 - 25 0 25 50 75 100 125 0.1 0.0 150 0.2 TJ - Junction Temperature (°C) 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Junction Temperature 0.8 0.18 0.15 0.7 ID = 3.2 A; TJ = 125 °C ID = 250 µA 0.12 VGS(th) (V) R DS(on) - On-Resistance (Ω) 0.4 ID = 0.5 A; TJ = 125 °C 0.09 0.06 0.6 0.5 ID = 3.2 A; TJ = 25 °C ID = 0.5 A; TJ = 25 °C 0.03 0.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.4 4.0 4.5 0.3 - 50 5.0 VGS - Gate-to-Source Voltage (V) - 25 0 25 50 75 100 125 150 TJ - Temperature (°C) Threshold Voltage On-Resistance vs. Gate-to-Source Voltage 100 40 Limited by RDS(on)* I D - Drain Current (A) Power (W) 30 20 10 1 ms 1 10 ms 100 ms 0.1 10 100 µs TA = 25 °C Single Pulse 1 s, 10 s DC BVDSS Limited 0 0.001 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 Time (s) VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Single Pulse Power, Junction-to-Ambient Safe Operating Area, Junction-to-Ambient S10-0542-Rev. A, 08-Mar-10 Document Number: 65905 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2377EDS www.vishay.com Vishay Siliconix 5 2.0 4 1.6 Power (W) I D - Drain Current (A) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 3 2 1.2 0.8 0.4 1 0.0 0 0 25 50 75 100 125 150 25 50 75 100 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating a Power Derating 125 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S10-0542-Rev. A, 08-Mar-10 Document Number: 65905 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2377EDS www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 130 °C/W 3. TJM - T A = PDMZthJA(t) Single Pulse 0.01 10 -4 4. Surface Mounted 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for silicon technology and package reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65905. S10-0542-Rev. A, 08-Mar-10 Document Number: 65905 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS Min INCHES Max Min Max 0.044 A 0.89 1.12 0.035 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 Document Number: 71196 09-Jul-01 www.vishay.com 1 Application Note 826 Vishay Siliconix 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72609 Revision: 21-Jan-08 www.vishay.com 25 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000