SI2377EDS-T1-GE3

New Product Si2377EDS Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.061 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.8 0.110 at VGS = - 1.8 V - 3.3 0.165 at VGS = - 1.5 V - 0.5 Qg (Typ.) 7.6 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Typical ESD Performance 2000 V • Built in ESD Protection with Zener Diode • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Devices TO-236 (SOT-23) S G 1 S 2 3 D G R Top View Si2377EDS (P6)* * Marking Code D P-Channel MOSFET Ordering Information: Si2377EDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Limit - 20 ±8 - 4.4 - 3.5 - 3.7b, c - 2.9b, c - 20 - 1.5 ID IDM Continuous Source-Drain Diode Current Maximum Power Dissipation TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range IS PD TJ, Tstg Soldering Recommendations (Peak Temperature)d, e - 1.0b, c 1.8 1.1 1.25b, c 0.8b, c - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter b, d Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) t≤5s Steady State Symbol RthJA RthJF Typical 80 55 Maximum 100 70 Unit °C/W Notes: a. TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 130 °C/W. Document Number: 65905 S10-0542-Rev. A, 08-Mar-10 www.vishay.com 1 New Product Si2377EDS Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) IGSS Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ID(on) Drain-Source On-State Resistancea a Forward Transconductance RDS(on) gfs ID = - 250 µA VDS = VGS, ID = - 250 µA V - 13 mV/°C 2.5 - 0.4 -1 VDS = 0 V, VGS = ± 8 V ±6 VDS = 0 V, VGS = ± 4.5 V ± 0.5 VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 VDS ≤ - 5 V, VGS = - 4.5 V - 15 V µA A VGS = - 4.5 V, ID = - 3.2 A 0.050 0.061 VGS = - 2.5 V, ID = - 2.8 A 0.065 0.080 VGS = - 1.8 V, ID = - 1.5 A 0.090 0.110 VGS = - 1.5 V, ID = - 0.5 A 0.110 0.165 VDS = - 10 V, ID = - 3.2 A 12 Ω S Dynamicb Total Gate Charge Gate-Source Charge Qg Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VDS = - 10 V, VGS = - 8 V, ID = - 5.3 A VDS = - 10 V, VGS = - 4.5 V, ID = - 5.3 A 21 12 0.8 VDD = - 10 V, RL = 2.3 Ω ID ≅ - 4.3 A, VGEN = - 4.5 V, Rg = 1 Ω 0.4 2 4 0.20 0.3 1.00 1.50 4.00 6.00 tf 2.00 3.00 td(on) 0.09 0.14 0.40 0.60 5.20 7.80 2.30 3.50 td(off) tr td(off) nC 3.1 f = 1 MHz td(on) tr 14 7.6 VDD = - 10 V, RL = 2.3 Ω ID ≅ - 4.3 A, VGEN = - 8 V, Rg = 1 Ω tf kΩ µs Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C - 1.5 - 20 IS = - 3 A, VGS = 0 V IF = - 3 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.8 - 1.2 V 30 60 ns 20 40 nC 13 17 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 65905 S10-0542-Rev. A, 08-Mar-10 New Product Si2377EDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.5 10-2 10-3 TJ = 25 °C IGSS - Gate Current (A) IGSS - Gate Current (mA) 1.2 0.9 0.6 10-4 TJ = 150 °C 10-5 TJ = 25 °C 10-6 10-7 0.3 10-8 0.0 0 3 6 9 12 10-9 15 0 6 9 12 VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 15 10 20 8 16 VGS = 5 V thru 2.5 V I D - Drain Current (A) I D - Drain Current (A) 3 VGS - Gate-to-Source Voltage (V) 12 VGS = 2 V 8 VGS = 1.5 V 4 6 4 TC = 25 °C 2 TC = 125 °C TC = - 55 °C VGS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 0.4 1.2 1.6 2.0 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Transfer Characteristics Output Characteristics 8 0.21 VGS - Gate-to-Source Voltage (V) 0.18 R DS(on) - On-Resistance (Ω) 0.8 0.15 VGS = 1.8 V 0.12 VGS = 1.5 V 0.09 VGS = 2.5 V 0.06 0.03 ID = 5.3 A VDS = 10 V 6 VDS = 5 V VDS = 16 V 4 2 VGS = 4.5 V 0 0.00 0 4 8 12 16 ID - Drain Current (A) On-Resistance vs. Drain Current Document Number: 65905 S10-0542-Rev. A, 08-Mar-10 20 0 3 6 9 12 15 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 3 New Product Si2377EDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.5 100 1.4 I S - Source Current (A) (Normalized) R DS(on) - On-Resistance VGS = 4.5 V, 2.5 V; ID = 3.2 A 1.3 1.2 1.1 VGS = 1.8 V; ID = 1.5 A 1.0 0.9 TJ = 150 °C 10 TJ = 25 °C 1 0.8 0.7 - 50 - 25 0 25 50 75 100 125 0.1 0.0 150 0.2 TJ - Junction Temperature (°C) 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Soure-Drain Diode Forward Voltage 0.8 0.18 0.15 0.7 ID = 3.2 A; TJ = 125 °C ID = 250 µA 0.12 VGS(th) (V) R DS(on) - On-Resistance (Ω) 0.4 ID = 0.5 A; TJ = 125 °C 0.09 0.06 0.6 0.5 ID = 3.2 A; TJ = 25 °C ID = 0.5 A; TJ = 25 °C 0.03 0.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.4 4.0 4.5 0.3 - 50 5.0 VGS - Gate-to-Source Voltage (V) - 25 0 25 50 75 100 125 150 TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage 100 40 Limited by RDS(on)* I D - Drain Current (A) Power (W) 30 20 10 10 100 µs 1 ms 1 10 ms 100 ms 0.1 TA = 25 °C Single Pulse 1 s, 10 s DC BVDSS Limited 0 0.001 0.01 0.1 1 10 100 Time (s) Single Pulse Power, Junction-to-Ambient 1000 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 65905 S10-0542-Rev. A, 08-Mar-10 New Product Si2377EDS Vishay Siliconix 5 2.0 4 1.6 Power (W) I D - Drain Current (A) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3 2 1.2 0.8 0.4 1 0.0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 65905 S10-0542-Rev. A, 08-Mar-10 www.vishay.com 5 New Product Si2377EDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 130 °C/W 3. TJM - T A = PDMZthJA(t) Single Pulse 0.01 10 -4 4. Surface Mounted 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65905. www.vishay.com 6 Document Number: 65905 S10-0542-Rev. A, 08-Mar-10 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1