SI2393DS-T1-GE3

Si2393DS www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES SOT-23 (TO-236) • TrenchFET® Gen IV p-channel power MOSFET • 100 % Rg and UIS tested D 3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 S APPLICATIONS S • Load switch 1 G Top View • Circuit protection • Motor drive control Marking code: G6 G PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a, e Configuration -30 0.0227 0.0330 8.2 -7.5 Single D P-Channel MOSFET ORDERING INFORMATION Package SOT-23 Lead (Pb)-free and halogen-free Si2393DS-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS -30 Gate-source voltage VGS -20 / +16 TC = 70 °C TA = 25 °C -6.9 ID -6.1 b, c -4.8 b, c TA = 70 °C Pulsed drain current (t = 100 μs) Continuous source-drain diode current IDM TC = 25 °C TA = 25 °C Maximum power dissipation TA = 25 °C -2.1 IS -1.1 b, c 2.5 1.6 PD W 1.3 b, c 0.8 b, c TA = 70 °C Operating junction and storage temperature range A -50 TC = 25 °C TC = 70 °C V -7.5 e TC = 25 °C Continuous drain current (TJ = 150 °C) UNIT TJ, Tstg -55 to +150 °C THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient b Maximum junction-to-case (drain) SYMBOL TYPICAL MAXIMUM t5s RthJA 75 100 Steady state RthJF 40 50 UNIT °C/W Notes a. Based on TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 5 s d. Maximum under steady state conditions is 166 °C/W e. Package limited S19-0382-Rev. A, 29-Apr-2019 Document Number: 70132 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2393DS www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT V Static Drain-source breakdown voltage VDS VGS = 0 V, ID = -250 μA -30 - - VDS/TJ ID = -250 μA - -24.7 - VGS(th) temperature coefficient VGS(th)/TJ ID = -250 μA - 5.7 - Gate-source threshold voltage VDS temperature coefficient mV/°C VGS(th) VDS = VGS, ID = 250 μA -1 - -2.2 V Gate-source leakage IGSS VDS = 0 V, VGS = -20 V / +16 V - - 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = -30 V, VGS = 0 V - - -1 VDS = -30 V, VGS = 0 V, TJ = 70 °C - - -15 VDS  -10 V, VGS = -10 V -10 - - A  VGS = -10 V, ID = -5 A - 0.0189 0.0227 VGS = -4.5 V, ID = -3 A - 0.0264 0.0330 VDS = -15 V, ID = -5 A - 10 - - 980 - VDS = -15 V, VGS = 0 V, f = 1 MHz - 440 - - 55 - - 16.8 25.2 μA S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = -15 V, VGS = -10 V, ID = -6.1 A pF - 8.2 12.3 VDS = -15 V, VGS = -4.5 V, ID =-6.1 A - 3.6 - - 2.8 - f = 1 MHz 3.6 18.3 36.6 - 14 28 - 8 16 - 48 96 tf - 32 64 td(on) - 30 45 - 85 170 - 34 68 - 40 80 - - -2.1 - - -50 - -0.8 -1.2 V - 21 42 ns - 8 16 nC - 8.5 - - 12.5 - td(on) tr td(off) tr td(off) VDD = -15 V, RL = 2.5 , ID  -4.8 A, VGEN = -10 V, Rg = 1  VDD = -15 V, RL = 2.5 , ID  -4.8 A, VGEN = -4.5 V, Rg = 1  tf nC  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = -4.8 A, VGS = 0 V IF = -4.8 A, di/dt = 100 A/μs, TJ = 25 °C A ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S19-0382-Rev. A, 29-Apr-2019 Document Number: 70132 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2393DS www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 70 10000 50 VGS = 10 V thru 5 V 56 30 20 100 VGS = 3 V 10 10 3 4 100 TC = 25 °C 10 0 5 0 1.5 3 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Axis Title Axis Title 10000 VGS = 10 V 100 0.015 2nd line C - Capacitance (pF) 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 1000 VGS = 4.5 V 10 20 30 Ciss 1000 1000 Coss 100 100 Crss 10 10 10 0 10000 10 000 0.045 0 0 40 5 10 15 20 25 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance Axis Title 8 1000 1st line 2nd line 6 4 100 VDS = 8 V, 15 V, 24 V 2 10 0 3 6 9 12 15 18 2nd line RDS(on) - On-Resistance (Normalized) 1.5 ID = 6.1 A 0 30 Axis Title 10000 10 2nd line VGS - Gate-to-Source Voltage (V) 6 VDS - Drain-to-Source Voltage (V) 0.060 0.030 4.5 1st line 2nd line 2 28 10000 VGS = 10 V, 5 A 1.3 1000 1.1 VGS = 4.5 V, 3 A 100 0.9 10 0.7 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S19-0382-Rev. A, 29-Apr-2019 1st line 2nd line 1 1000 TC = 125 °C 42 14 0 0 TC = -55 °C 1st line 2nd line 1000 2nd line ID - Drain Current (A) VGS = 4 V 1st line 2nd line 2nd line ID - Drain Current (A) 40 Document Number: 70132 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2393DS www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 2.1 10000 100 1.9 2nd line VGS(th) (V) TJ = 150 °C 1000 TJ = 25 °C 1 1000 1.7 1st line 2nd line 10 1st line 2nd line 2nd line IS - Source Current (A) ID = 250 μA 1.5 100 100 1.3 0.1 1.1 0.01 10 0 0.2 0.4 0.6 0.8 1.0 10 0.9 1.2 -50 -25 0 25 50 75 100 125 150 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage Axis Title 10 10000 0.06 ID = 5 A 8 TJ = 125 °C 0.03 Power (W) 1000 0.04 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 0.05 6 4 TA = 25 °C 100 0.02 TJ = 25 °C 2 0.01 10 0 0 0.01 VGS - Gate-to-Source Voltage (V) 1 10 Time (s) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0 2 4 6 8 10 0.1 100 1000 Axis Title 10000 100 IDM limited 100 μs 1000 1 ms 1 Limited by RDS(on) 10 ms a 0.1 100 ms 10 s, 1 s100 1st line 2nd line 2nd line ID - Drain Current (A) 10 DC 0.01 TA = 25 °C, single pulse 0.001 0.01 BVDSS limited 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area, Junction-to-Ambient Note a. VGS > minimum VGS at which RDS(on) is specified S19-0382-Rev. A, 29-Apr-2019 Document Number: 70132 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2393DS www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 10 2nd line ID - Drain Current (A) 8 1000 1st line 2nd line 6 4 100 2 10 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating a 3 1.0 2.5 0.8 Power (W) Power (W) 2 1.5 1 0.6 0.4 0.2 0.5 0 0 25 50 75 100 125 150 0 TC - Case Temperature (°C) 0 25 50 75 100 125 TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S19-0382-Rev. A, 29-Apr-2019 Document Number: 70132 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si2393DS www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 166 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70132. S19-0382-Rev. A, 29-Apr-2019 Document Number: 70132 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS Min INCHES Max Min Max 0.044 A 0.89 1.12 0.035 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 Document Number: 71196 09-Jul-01 www.vishay.com 1 PAD Pattern www.vishay.com Vishay Siliconix Recommended Minimum PADs for PowerPAK® 8 x 8L Single 8.00 (0.31) 0.50 (0.02) 4.05 (0.16) 3.55 (0.14) Y 3.99 (0.16) 4.59 (0.18) 6.90 (0.27) (0, 0) 0.44 (0.02) X 0.54 (0.02) 0.85 (0.03) 6.11 (0.24) 1.29 (0.05) 1.94 (0.08) 8.25 (0.32) 3.23 (0.13) 0.82 (0.03) 2.47 (0.10) 3.62 (0.14) 4.05 (0.16) 2.03 (0.08) 1.15 (0.05) 0.88 (0.03) Dimensions in millimeters (inches) Note • Linear dimensions are in black, the same information is provided in ordinate dimensions which are in blue. Revision: 08-Apr-15 1 Document Number: 67477 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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