SI3129DV-T1-GE3

Si3129DV www.vishay.com Vishay Siliconix P-Channel 80 V (D-S) MOSFET FEATURES TSOP-6 Single D 6 • TrenchFET® power MOSFET S 4 D 5 • 100 % Rg tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1 D Top View 2 D 3 G APPLICATIONS S • Power management for portable and consumer - Load switches Marking Code: BU G - DC/DC converters PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -10 V RDS(on) max. () at VGS = -4.5 V Qg typ. (nC) ID (A) a Configuration -80 0.0827 0.1242 5.6 -5.4 Single D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free TSOP-6 Single Si3129DV-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage SYMBOL VDS LIMIT -80 Gate-source voltage VGS ±20 TC = 25 °C Continuous drain current (TJ = 150 °C) TC = 70 °C TA = 25 °C -4.4 ID -3.8 b, c -3.0 b, c Continuous source-drain diode current Single pulse avalanche energy IDM TC = 25 °C TA = 25 °C L = 0.1 mH -20 TC = 70 °C TA = 25 °C IS -1.7 b, c IAS 15 11 EAS 4.2 2.7 PD W 2 b, c 1.3 b, c TA = 70 °C Operating junction and storage temperature range A -3.5 TC = 25 °C Maximum power dissipation V -5.4 TA = 70 °C Pulsed drain current (t = 300 μs) UNIT TJ, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS PARAMETER t5s Maximum Junction-to-Ambient b, d Maximum Junction-to-Foot (Drain) Steady State Notes a. TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 5 s d. Maximum under steady state conditions is 110 °C/W S20-0813-Rev. A, 19-Oct-2020 SYMBOL RthJA RthJF TYPICAL 45 25 MAXIMUM 62.5 30 UNIT °C/W Document Number: 78984 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si3129DV www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = -250 μA -80 - - V Static Drain-source breakdown voltage VDS/TJ ID = -10 mA - -115 - VGS(th) temperature coefficient VGS(th)/TJ ID = 250 μA - 4.8 - Gate-source threshold voltage VGS(th) VDS = VGS, ID = -250 μA -1.5 - -2.5 V IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA VDS = -80 V, VGS = 0 V - - -10 VDS = -80 V, VGS = 0 V, TJ = 55 °C - - -50 VDS temperature coefficient Gate-source leakage Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a RDS(on) VDS  -5 V, VGS = -10 V -5 - - VGS = -10 V, ID = -3.8 A - 0.0689 0.0827 VGS = -4.5 V, ID = -3.1 A - 0.0994 0.1242 - 805 - - 265 - - 10 - VDS = -40 V, VGS = -10 V, ID = -3.8 A - 12 18 - 5.6 8.4 VDS = -40 V, VGS = -4.5 V, ID = -3.8 A - 3.1 - - 1.4 - f = 1 MHz 0.8 4.4 8.8 - 15 30 mV/°C μA A  Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = -40 V, VGS = 0 V, f = 1 MHz td(on) VDD = -40 V, RL = 13.3  ID  -3 A, VGEN = - 10 V, Rg = 1  tr - 8 16 - 25 50 tf - 12 24 td(on) - 28 56 - 42 84 - 24 48 - 15 30 td(off) VDD = -40 V, RL = 13.3  ID  -3 A, VGEN = - 4.5, Rg = 1  tr td(off) tf pF nC  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD TC = 25 °C IS = -3 A, VGS = 0 V - - -3.5 - - -20 - -0.8 -1.2 A V Body diode reverse recovery time trr - 38 57 ns Body diode reverse recovery charge Qrr - 50 75 nC Reverse recovery fall time ta - 26 - Reverse recovery rise time tb - 12 - IF = -3 A, dI/dt = 100 A/μs, TJ = 25 °C ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing   Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S20-0813-Rev. A, 19-Oct-2020 Document Number: 78984 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si3129DV www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 20 VGS = 4 V 10 100 5 10000 15 1000 TC = 125 °C 10 100 5 TC = 25 °C VGS = 3 V 0 1 2 3 TC = -55 °C 10 0 10 0 1st line 2nd line 1000 2nd line ID - Drain Current (A) VGS = 10 V thru 5 V 15 1st line 2nd line 2nd line ID - Drain Current (A) 20 0 4 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 6 Axis Title Axis Title 1000 10000 0.200 10000 0.100 VGS = 10 V 100 0.050 10 0 5 10 15 Crss 10 10 0 20 40 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance Axis Title 1st line 2nd line VDS = 20 V, 40 V, 64 V 4 100 2 10 0 10.5 Qg - Total Gate Charge (nC) Gate Charge S20-0813-Rev. A, 19-Oct-2020 14 2nd line RDS(on) - On-Resistance (Normalized) 1000 6 10000 1.8 8 7 80 Axis Title 10000 ID = 3.8 A 2nd line VGS - Gate-to-Source Voltage (V) 60 ID - Drain Current (A) 3.5 100 1 20 10 0 1000 VGS = 10 V, 3.8 A 1.5 1000 1.2 1st line 2nd line 0 Coss 100 1st line 2nd line 1000 VGS = 4.5 V 2nd line C - Capacitance (pF) 0.150 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) Ciss VGS = 4.5 V, 3.1 A 100 0.9 10 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 78984 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si3129DV www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title TJ = 150 °C 100 TJ = 25 °C 0.1 0.01 0.25 2nd line RDS(on) - On-Resistance (Ω) 0.15 TJ = 125 °C 0.1 0.2 0.4 0.6 0.8 1.0 100 TJ = 25 °C 0.05 10 0 1000 0.2 1st line 2nd line 1000 1st line 2nd line 2nd line IS - Source Current (A) ID = 3.8 A 10 1 10000 0.3 10000 100 10 0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title 2.4 10000 50 40 2.1 Power (W) 1000 1st line 2nd line 2nd line VGS(th) (V) ID = 250 μA 1.8 30 20 100 1.5 10 10 1.2 -50 -25 0 25 50 75 0 10- 3 100 125 150 10- 2 10- 1 TJ - Junction Temperature (°C) Threshold Voltage 1 Time (s) 10 100 600 Single Pulse Power, Junction-to-Ambient Axis Title 10000 100 10 Limited by RDS(on) a 1000 100 μs 1 1 ms 1st line 2nd line 2nd line ID - Drain Current (A) IDM limited 10 ms 100 0.1 100 ms TA = 25 °C, single pulse 0.01 0.01 0.1 BVDSS limited 1 10 10s, 1s DC 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area Note a. VGS > minimum VGS at which RDS(on) is specified S20-0813-Rev. A, 19-Oct-2020 Document Number: 78984 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si3129DV www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 5 10000 6 4 3 Power (W) 1000 4 1st line 2nd line 2nd line ID - Drain Current (A) 5 3 2 100 2 1 1 10 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating a 125 150 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power Junction-to-Case Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S20-0813-Rev. A, 19-Oct-2020 Document Number: 78984 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si3129DV www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2 1 Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty cycle, D = 0.02 t1 t2 2. Per unit base = R thJA = 90 °C/W 3. TJM - TA = PDMZthJA(t) Single pulse 4. Surface mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?78984. S20-0813-Rev. A, 19-Oct-2020 Document Number: 78984 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix TSOP: 5/6−LEAD JEDEC Part Number: MO-193C e1 e1 5 4 6 E1 1 2 5 4 E E1 1 3 2 3 -B- e b E -B- e 0.15 M C B A 5-LEAD TSOP b 0.15 M C B A 6-LEAD TSOP 4x 1 -A- D 0.17 Ref c R R A2 A L2 Gauge Plane Seating Plane Seating Plane 0.08 C L A1 -C- (L1) 4x 1 MILLIMETERS Dim A A1 A2 b c D E E1 e e1 L L1 L2 R Min Nom Max Min Nom Max 0.91 - 1.10 0.036 - 0.043 0.01 - 0.10 0.0004 - 0.004 0.90 - 1.00 0.035 0.038 0.039 0.30 0.32 0.45 0.012 0.013 0.018 0.10 0.15 0.20 0.004 0.006 0.008 2.95 3.05 3.10 0.116 0.120 0.122 2.70 2.85 2.98 0.106 0.112 0.117 1.55 1.65 1.70 0.061 0.065 0.067 0.95 BSC 0.0374 BSC 1.80 1.90 2.00 0.071 0.075 0.079 0.32 - 0.50 0.012 - 0.020 0.60 Ref 0.024 Ref 0.25 BSC 0.010 BSC 0.10 - - 0.004 - - 0 4 8 0 4 8 7 Nom 1 ECN: C-06593-Rev. I, 18-Dec-06 DWG: 5540 Document Number: 71200 18-Dec-06 INCHES 7 Nom www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR TSOP-6 0.099 0.039 0.020 0.019 (1.001) (0.508) (0.493) 0.064 (1.626) 0.028 (0.699) (3.023) 0.119 (2.510) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 26 Document Number: 72610 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 09-Jul-2021 1 Document Number: 91000