SI3456DDV-T1-BE3

Si3456DDV www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES TSOP-6 Single D 6 D 5 S 4 • TrenchFET® power MOSFET • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Available 1 D Top View 2 D APPLICATIONS 3 G • Load switch D • HDD (1, 2, 5, 6) • DC/DC converter Marking code: AY G PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) d Configuration (3) 30 0.040 0.050 2.8 6.3 Single (4) S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and halogen-free TSOP-6 Si3456DDV-T1-E3 Si3456DDV-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage SYMBOL LIMIT VDS VGS 30 ± 20 6.3 5.1 5 a, b 4 a, b 20 2.2 1.4 a, b 2.7 1.7 1.7 a, b 1.1 a, b -55 to +150 260 TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous drain current (TJ = 150 °C) ID Pulsed drain current IDM TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) Continuous source-drain diode current IS PD TJ, Tstg UNIT V A W °C THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient a, c Maximum junction-to-foot (drain) t5s Steady state SYMBOL TYPICAL MAXIMUM UNIT RthJA RthJF 61 38 74 46 °C/W Notes a. Surface mounted on 1" x 1" FR4 board b. t = 5 s c. Maximum under steady state conditions is 120 °C/W d. Based on TC = 25 °C S09-1399-Rev. B, 20-Jul-09 Document Number: 69075 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si3456DDV www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 30 - - - V 32 - - -5 - Static Drain-source breakdown voltage VDS temperature coefficient VDS/TJ VGS(th) temperature coefficient VGS(th)/TJ Gate-source threshold voltage ID = 250 μA mV/°C VGS(th) VDS = VGS, ID = 250 μA 1.2 - 3 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = 30 V, VGS = 0 V - - 1 VDS = 30 V, VGS = 0 V, TJ = 70 °C - - 10 VDS  5 V, VGS = 10 V 15 - - A  VGS = 10 V, ID = 5 A - 0.033 0.040 VGS = 4.5 V, ID = 4.5 A - 0.041 0.050 VDS = 15 V, ID = 5 A - 15 - - 325 - - 60 - - 30 - μA S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 5 A - 6 9 - 2.8 4.2 VDS = 15 V, VGS = 4.5 V, ID = 5 A - 1.1 - - 0.8 - f = 1 MHz 0.6 2.8 5.6 - 12 18 - 13 20 td(on) tr td(off) VDD = 15 V, RL = 3.8  ID  4 A, VGEN = 4.5 V, Rg = 1  - 16 25 tf - 11 17 td(on) - 4 8 - 9 18 - 11 20 - 8 15 tr td(off) VDD = 15 V, RL = 3.8  ID  4 A, VGEN = 10 V, Rg = 1  tf pF nC  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = 4 A, VGS = 0 V IF = 4 A, di/dt = 100 A/μs, TJ = 25 °C - - 1.2 - - 20 - 0.8 1.2 V - 11 20 ns - 4 8 nC - 6 - - 5 - A ns Notes a. Pulse test; pulse width 300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing    Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S09-1399-Rev. B, 20-Jul-09 Document Number: 69075 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si3456DDV www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 5 VGS = 10 V thru 4 V 4 I D - Drain Current (A) I D - Drain Current (A) 15 10 3 2 TC = 25 °C VGS = 3 V 5 1 TC = 125 °C TC = - 55 °C 0 0.0 0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Transfer Characteristics Output Characteristics 400 0.06 300 0.05 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) Ciss VGS = 4.5 V 0.04 VGS = 10 V 200 0.03 100 0.02 0 0 5 10 15 Coss Crss 0 20 5 10 15 25 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 30 1.7 ID = 5.0 A VGS = 10 V; ID = 5.0 A 8 6 VDS = 15 V VDS = 24 V 4 2 (Normalized) 1.5 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 20 1.3 1.1 VGS = 4.5 V; ID = 4.5 A 0.9 0 0 1 2 3 4 Qg - Total Gate Charge (nC) Gate Charge S09-1399-Rev. B, 20-Jul-09 5 6 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 69075 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si3456DDV www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.10 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 100 10 TJ = 150 °C TJ = 25 °C 1 0.08 0.06 TJ = 125 °C 0.04 TJ = 25 °C 0.02 0.00 0.1 0.0 0.3 0.6 0.9 1.2 0 1.5 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.3 25 2.1 20 Power (W) VGS(th) (V) 1.9 ID = 250 µA 1.7 15 10 1.5 5 1.3 1.1 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) 0.1 1 10 100 Time (s) Threshold Voltage Single Pulse Power 100 I D - Drain Current (A) Limited by RDS(on)* 10 100 µA 1 1 ms 10 ms 100 ms 0.1 TA = 25 °C Single Pulse 0.01 0.1 1 s, 10 s BVDSS Limited DC 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S09-1399-Rev. B, 20-Jul-09 Document Number: 69075 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si3456DDV www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) I D - Drain Current (A) 8 6 4 2 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 3.5 1.5 2.8 1.2 2.1 0.9 Power (W) Power (W) Current Derating a 1.4 0.6 0.3 0.7 0.0 0.0 0 25 50 75 100 TC - Case Temperature (°C) Power Derating (TC) 125 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating (TA) Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S09-1399-Rev. B, 20-Jul-09 Document Number: 69075 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si3456DDV www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 120 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot                    Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69075. S09-1399-Rev. B, 20-Jul-09 Document Number: 69075 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix TSOP: 5/6−LEAD JEDEC Part Number: MO-193C e1 e1 5 4 6 E1 1 2 5 4 E E1 1 3 2 3 -B- e b E -B- e 0.15 M C B A 5-LEAD TSOP b 0.15 M C B A 6-LEAD TSOP 4x 1 -A- D 0.17 Ref c R R A2 A L2 Gauge Plane Seating Plane Seating Plane 0.08 C L A1 -C- (L1) 4x 1 MILLIMETERS Dim A A1 A2 b c D E E1 e e1 L L1 L2 R Min Nom Max Min Nom Max 0.91 - 1.10 0.036 - 0.043 0.01 - 0.10 0.0004 - 0.004 0.90 - 1.00 0.035 0.038 0.039 0.30 0.32 0.45 0.012 0.013 0.018 0.10 0.15 0.20 0.004 0.006 0.008 2.95 3.05 3.10 0.116 0.120 0.122 2.70 2.85 2.98 0.106 0.112 0.117 1.55 1.65 1.70 0.061 0.065 0.067 0.95 BSC 0.0374 BSC 1.80 1.90 2.00 0.071 0.075 0.079 0.32 - 0.50 0.012 - 0.020 0.60 Ref 0.024 Ref 0.25 BSC 0.010 BSC 0.10 - - 0.004 - - 0 4 8 0 4 8 7 Nom 1 ECN: C-06593-Rev. I, 18-Dec-06 DWG: 5540 Document Number: 71200 18-Dec-06 INCHES 7 Nom www.vishay.com 1 PAD Pattern www.vishay.com Vishay Siliconix Recommended Land Pattern For TSOP-5L / TSOP-6L 5 1 2 4 6 5 4 3 1 2 3 TSOP 5L TSOP 6L 0.036 [0.922] 0.136 [3.444] 0.064 [1.626] 0.095 [2.408] 0.037 [0.950] 0.020 [0.508] 0.017 [0.442] Note • All dimensions are in inches (millimeter) ECN: C22-0860-Rev. B, 24-Oct-2022 DWG: 3010 Revision: 24-Oct-2022 Document Number: 72610 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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