Si3460DDV
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)d
0.028 at VGS = 4.5 V
7.9
0.032 at VGS = 2.5 V
7.4
0.038 at VGS = 1.8 V
6.8
VDS (V)
20
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
6.7 nC
APPLICATIONS
TSOP-6
Top View
D
1
6
D
3 mm D
2
5
D
• DC/DC Converters
• Boost Converters
• Load Switch
D
(1, 2, 5, 6)
Marking Code
G
3
4
BA
S
XXX
G
Lot Traceability
and Date Code
(3)
Part # Code
(4)
2.85 mm
S
Ordering Information: Si3460DDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
±8
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
6.3
ID
TA = 25 °C
6.2a, b
5.0a, b
TA = 70 °C
Continuous Source-Drain Diode Current
IDM
TC = 25 °C
2.2
IS
TA = 25 °C
1.4a, b
Avalanche Current
IAS
8
EAS
3.2
TC = 25 °C
mJ
2.7
TC = 70 °C
1.7
PD
TA = 25 °C
W
1.7a, b
1.1a, b
TA = 70 °C
Operating Junction and Storage Temperature Range
A
20
Single Avalanche Energy
Maximum Power Dissipation
V
7.9
TC = 70 °C
Pulsed Drain Current
Unit
TJ, Tstg
- 55 to 150
Soldering Recommendations (Peak Temperature)d, e
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Maximum Junction-to-Ambienta, c
t≤5s
RthJA
61
74
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
38
46
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under steady state conditions is 120 °C/W.
d. Based on TC = 25 °C.
Document Number: 66572
S10-0789-Rev. A, 05-Apr-10
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1
Si3460DDV
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
ΔVDS/TJ
VDS Temperature Coefficient
ID = 250 µA
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = 250 µA
IGSS
Gate-Source Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
V
21
mV/°C
- 2.6
1.0
V
VDS = 0 V, VGS = ± 8 V
± 100
nA
VDS = 20 V, VGS = 0 V
1
VDS = 20 V, VGS = 0 V, TJ = 70 °C
10
VDS ≤ 5 V, VGS = 4.5 V
0.4
20
µA
A
VGS = 4.5 V, ID = 5.1 A
0.023
0.028
VGS = 2.5 V, ID = 4.7 A
0.027
0.032
VGS = 1.8 V, ID = 2.5 A
0.031
0.038
VDS = 10 V, ID = 5.1 A
35
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
666
VDS = 10 V, VGS = 0 V, f = 1 MHz
tr
pF
VDS = 10 V, VGS = 8 V, ID = 5 A
12
18
6.7
10.1
VDS = 10 V, VGS = 4.5 V, ID = 5 A
0.95
VDD = 10 V, RL = 2 Ω
ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω
0.4
2.1
4.2
6
12
11
20
21
32
tf
8
16
td(on)
5
10
12
18
19
29
8
16
tr
td(off)
nC
0.5
f = 1 MHz
td(on)
td(off)
93
41
VDD = 10 V, RL = 2 Ω
ID ≅ 5 A, VGEN = 8 V, Rg = 1 Ω
tf
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
2.2
20
IS = 5 A, VGS = 0 V
IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.8
1.2
V
11
20
ns
3
6
nC
7
4
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 66572
S10-0789-Rev. A, 05-Apr-10
Si3460DDV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
5
V GS = 5 V thru 1.8 V
4
I D - Drain Current (A)
I D - Drain Current (A)
15
10
3
T C = 25 °C
2
5
1
V GS = 1.5 V
T C = 125 °C
V GS = 1 V
0.5
1.0
1.5
T C = - 55 °C
0
0.0
2.0
0.3
0.6
0.9
1.2
V DS - Drain-to-Source Voltage (V)
V GS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.05
900
0.04
675
1.5
Ciss
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
0
0.0
V GS = 1.8 V
0.03
V GS = 2.5 V
V GS = 4.5 V
0.02
450
Coss
225
Crss
0
0.01
0
5
10
15
0
20
5
10
15
20
V DS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
Capacitance
On-Resistance vs. Drain Current and Gate Voltage
1.7
8
1.5
V DS = 10 V
V DS = 5 V
4
V DS = 16 V
2
V GS = 2.5 V; I D = 3 A
(Normalized)
6
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
ID = 5 A
1.3
1.1
V GS = 4.5 V; I D = 5 A
0.9
0
0
3
6
9
12
15
0.7
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
T J - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 66572
S10-0789-Rev. A, 05-Apr-10
150
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Si3460DDV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
0.060
T J = 150 °C
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 5 A
T J = 25 °C
1
0.045
T J = 125 °C
0.030
T J = 25 °C
0.015
0
0.1
0.0
0.3
0.6
0.9
0
1.2
2
4
6
8
V SD - Source-to-Drain Voltage (V)
V GS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.80
25
20
0.65
15
Power (W)
VGS(th) (V)
ID = - 5 mA
0.50
ID = - 250 μA
10
0.35
5
0.20
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
100
Time (s)
T J - Temperature (°C)
Single Pulse Power (Junction-to-Ambient)
Threshold Voltage
100
I D - Drain Current (A)
Limited by R DS(on)*
10
100 μA
1 ms
1
10 ms
0.1
100 ms
1 s, 10 s
TA = 25 °C
Single Pulse
DC
BVDSS Limited
0.01
0.1
1
10
100
V DS - Drain-to-Source Voltage (V)
* V GS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 66572
S10-0789-Rev. A, 05-Apr-10
Si3460DDV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
I D - Drain Current (A)
8
Package Limited
6
4
2
0
0
25
50
75
100
125
150
T C - Case Temperature (°C)
3.5
1.5
2.8
1.2
2.1
0.9
Power (W)
Power (W)
Current Derating*
1.4
0.7
0.6
0.3
0.0
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
T C - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 66572
S10-0789-Rev. A, 05-Apr-10
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5
Si3460DDV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.05
PDM
0.1
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 120 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for
Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?66572.
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Document Number: 66572
S10-0789-Rev. A, 05-Apr-10
Package Information
Vishay Siliconix
TSOP: 5/6−LEAD
JEDEC Part Number: MO-193C
e1
e1
5
4
6
E1
1
2
5
4
E
E1
1
3
2
3
-B-
e
b
E
-B-
e
0.15 M C B A
5-LEAD TSOP
b
0.15 M C B A
6-LEAD TSOP
4x 1
-A-
D
0.17 Ref
c
R
R
A2 A
L2
Gauge Plane
Seating Plane
Seating Plane
0.08
C
L
A1
-C-
(L1)
4x 1
MILLIMETERS
Dim
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
L2
R
Min
Nom
Max
Min
Nom
Max
0.91
-
1.10
0.036
-
0.043
0.01
-
0.10
0.0004
-
0.004
0.90
-
1.00
0.035
0.038
0.039
0.30
0.32
0.45
0.012
0.013
0.018
0.10
0.15
0.20
0.004
0.006
0.008
2.95
3.05
3.10
0.116
0.120
0.122
2.70
2.85
2.98
0.106
0.112
0.117
1.55
1.65
1.70
0.061
0.065
0.067
0.95 BSC
0.0374 BSC
1.80
1.90
2.00
0.071
0.075
0.079
0.32
-
0.50
0.012
-
0.020
0.60 Ref
0.024 Ref
0.25 BSC
0.010 BSC
0.10
-
-
0.004
-
-
0
4
8
0
4
8
7 Nom
1
ECN: C-06593-Rev. I, 18-Dec-06
DWG: 5540
Document Number: 71200
18-Dec-06
INCHES
7 Nom
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1
PAD Pattern
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Vishay Siliconix
Recommended Land Pattern For TSOP-5L / TSOP-6L
5
1
2
4
6
5
4
3
1
2
3
TSOP 5L
TSOP 6L
0.036
[0.922]
0.136
[3.444]
0.064
[1.626]
0.095
[2.408]
0.037
[0.950]
0.020
[0.508]
0.017
[0.442]
Note
• All dimensions are in inches (millimeter)
ECN: C22-0860-Rev. B, 24-Oct-2022
DWG: 3010
Revision: 24-Oct-2022
Document Number: 72610
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Disclaimer
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Revision: 01-Jan-2023
1
Document Number: 91000