SI3493BDV-T1-BE3

Si3493BDV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0275 at VGS = - 4.5 V - 8.0a 0.034 at VGS = - 2.5 V - 7.9 0.045 at VGS = - 1.8 V - 2.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • PWM Optimized • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 26.2 nC APPLICATIONS TSOP-6 Top View 3 mm 1 6 2 5 • Load Switch • PA Switch • Battery Switch (4) S Marking Code 3 AK 4 (3) G XXX Lot Traceability and Date Code Part # Code 2.85 mm (1, 2, 5, 6) D Ordering Information: Si3493BDV-T1-E3 (Lead (Pb)-free) Si3493BDV-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ± 8.0 TC = 70 °C - 7.03 ID TA = 25 °C - 7.0b, c - 5.8b, c TA = 70 °C IDM Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C - 2.48 IS TA = 25 °C - 1.73b, c 2.97 TC = 70 °C 1.9 PD TA = 25 °C W 2.08b, c 1.33b, c TA = 70 °C Operating Junction and Storage Temperature Range A - 25 TC = 25 °C Maximum Power Dissipation V - 8.0a TC = 25 °C Continuous Drain Current (TJ = 150 °C) Unit TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Maximum Junction-to-Ambientb, d t≤5s RthJA 50 60 Maximum Junction-to-Foot (Drain) Steady State RthJF 35 42 Unit °C/W Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 90 °C/W. Document Number: 74478 S09-1399-Rev. B, 20-Jul-09 www.vishay.com 1 Si3493BDV Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS /TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = - 250 µA VGS(th) VDS = VGS , ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS a On-State Drain Current Drain-Source On-State Resistancea Forward Transconductancea ID(on) RDS(on) gfs V -14.1 mV/°C 2.85 - 0.4 - 0.9 V ± 100 nA VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 VDS ≥ - 5 V, VGS = - 4.5 V - 25 µA A VGS = - 4.5 V, ID = - 7 A 0.023 0.0275 VGS = - 2.5 V, ID = - 3.5 A 0.0284 0.034 VGS = - 1.8 V, ID = - 2.2 A 0.0347 0.045 VDS = 10 V, ID = - 7 A 24.3 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 1805 VDS = - 10 V, VGS = 0 V, f = 1 MHz VDS = - 10 V, VGS = - 5.0 V, ID = - 7 A VDS = - 10 V, VGS = - 4.5 V, ID = - 7 A td(off) tf pF 29 43.5 26.2 39.3 1.45 nC 7.14 f = 1 MHz td(on) tr 285 245 VDD = - 10 V, RL = 2.0 Ω ID ≅ - 5.0 A, VGEN = - 4.5 V, Rg = 1 Ω 6.5 10 22 33 72 108 75 113 84 126 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C - 2.48 - 25 IS = - 2.5 A IF = 2.1 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.8 - 1.2 V 52 78 ns 49.5 74.3 nC 23.5 28.5 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74478 S09-1399-Rev. B, 20-Jul-09 Si3493BDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 25 4.0 VGS = 5 V thru 2 V 3.2 I D - Drain Current (A) I D - Drain Current (A) 20 15 10 1.5 V 5 2.4 1.6 TC = 25 °C 0.8 TC = 125 °C 1V 0 0.0 0.6 1.2 1.8 2.4 TC = - 55 °C 0.0 0.0 3.0 0.8 1.6 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.0 3500 2800 C - Capacitance (pF) 0.09 VGS = 1.8 V 0.06 VGS = 2.5 V Ciss 2100 1400 0.03 Coss 700 VGS = 4.5 V Crss 0.00 0 0 5 10 15 20 25 0 4 8 12 16 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 20 1.4 5 VGS = 4.5 V, ID = 7 A VGS = 2.5 V, ID = 3.5 A ID = 7 A 4 VDS = 16 V 3 2 1.2 (Normalized) VDS = 10 V R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 1.2 VDS - Drain-to-Source Voltage (V) 0.12 R DS(on) - On-Resistance (Ω) 0.4 VGS = 1.8 V, ID = 2.2 A 1.0 0.8 1 0 0 7 14 21 Qg - Total Gate Charge (nC) Gate Charge Document Number: 74478 S09-1399-Rev. B, 20-Jul-09 28 35 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si3493BDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 0.060 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 7 A 1 TJ = 150 °C 0.1 TJ = 25 °C 0.01 0.001 0.0 0.050 TA = 125 °C 0.030 TA = 25 °C 0.020 0.000 0.2 0.4 0.6 0.8 1.0 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1.0 20 0.8 16 Power (W) VGS(th) (V) ID = 250 µA 0.6 0.4 0.2 0.0 - 50 12 TA = 25 °C 8 4 - 25 0 25 50 75 100 125 150 0 10 -3 10 -2 10 -1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 600 100 Limited by RDS(on)* I D - Drain Current (A) 10 10 ms 100 ms 1 1s 10 s DC 0.1 0.01 TA = 25 °C Single Pulse 0.001 0.1 * VGS 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 74478 S09-1399-Rev. B, 20-Jul-09 Si3493BDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 4 Package Limited Power Dissipation (W) I D - Drain Current (A) 8 6 4 3 2 1 2 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74478 S09-1399-Rev. B, 20-Jul-09 www.vishay.com 5 Si3493BDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 90 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74478. www.vishay.com 6 Document Number: 74478 S09-1399-Rev. B, 20-Jul-09 Package Information Vishay Siliconix TSOP: 5/6−LEAD JEDEC Part Number: MO-193C e1 e1 5 4 6 E1 1 2 5 4 E E1 1 3 2 3 -B- e b E -B- e 0.15 M C B A 5-LEAD TSOP b 0.15 M C B A 6-LEAD TSOP 4x 1 -A- D 0.17 Ref c R R A2 A L2 Gauge Plane Seating Plane Seating Plane 0.08 C L A1 -C- (L1) 4x 1 MILLIMETERS Dim A A1 A2 b c D E E1 e e1 L L1 L2 R Min Nom Max Min Nom Max 0.91 - 1.10 0.036 - 0.043 0.01 - 0.10 0.0004 - 0.004 0.90 - 1.00 0.035 0.038 0.039 0.30 0.32 0.45 0.012 0.013 0.018 0.10 0.15 0.20 0.004 0.006 0.008 2.95 3.05 3.10 0.116 0.120 0.122 2.70 2.85 2.98 0.106 0.112 0.117 1.55 1.65 1.70 0.061 0.065 0.067 0.95 BSC 0.0374 BSC 1.80 1.90 2.00 0.071 0.075 0.079 0.32 - 0.50 0.012 - 0.020 0.60 Ref 0.024 Ref 0.25 BSC 0.010 BSC 0.10 - - 0.004 - - 0 4 8 0 4 8 7 Nom 1 ECN: C-06593-Rev. I, 18-Dec-06 DWG: 5540 Document Number: 71200 18-Dec-06 INCHES 7 Nom www.vishay.com 1 PAD Pattern www.vishay.com Vishay Siliconix Recommended Land Pattern For TSOP-5L / TSOP-6L 5 1 2 4 6 5 4 3 1 2 3 TSOP 5L TSOP 6L 0.036 [0.922] 0.136 [3.444] 0.064 [1.626] 0.095 [2.408] 0.037 [0.950] 0.020 [0.508] 0.017 [0.442] Note • All dimensions are in inches (millimeter) ECN: C22-0860-Rev. B, 24-Oct-2022 DWG: 3010 Revision: 24-Oct-2022 Document Number: 72610 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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