SI3831DV-T1-E3

Si3831DV Vishay Siliconix Bi-Directional P-Channel MOSFET/Power Switch FEATURES PRODUCT SUMMARY VDS (V) ±7 RDS(on) (Ω) ID (A) 0.170 at VGS = - 4.5 V ± 2.4 0.240 at VGS = - 2.5 V ± 2.0 DESCRIPTION The Si3831DV is a low on-resistance p-channel power MOSFET providing bi-directional blocking and conduction. Bi-directional blocking is facilitated by combining a 4-terminal symmetric p-channel MOSFET with a body bias selector circuita. Circuit operation automatically biases the p-channel body to the most positive source/drain potential thereby maintaining a reverse bias across the diode present between the source/drain terminals. Off-state device blocking characteristics are symmetric, facilitating bi-directional blocking for high-side battery switching in portable products. Gate drive is facilitated by negatively biasing the gate relative to the body potential. The off-state is achieved by biasing the gate to the most positive supply voltage or to the body potential. The Si3831DV is available in a 6-pin TSOP-6 package rated for the - 25 °C to 85 °C commercial temperature range. • Halogen-free According to IEC 61249-2-21 Definition • Low RDS(on) Symmetrical P-Channel MOSFET • Integrated Body Bias For Bi-Directional Blocking • 2.5 V to 5.5 V Operation • Exceeds ± 2 kV ESD Protected • Solution for High-Side Battery Disconnect Switching (BDS) • Supports Battery Switching in Multiple Battery Cell Phones, PDAs and PCS Products • Low Profile, Small Footprint TSOP-6 Package • Compliant to RoHS Directive 2002/95/EC APPLICATION CIRCUITS AC/DC Adapter Body Bias Charger Body Bias Loads Si3831DV DC/DC Body Bias Si3831DV Body Bias Si3831DV Si3831DV Figure 1. Charger Demultiplexing Charger Figure 2. Battery Multiplexing (High-Side Switch) Note: a. Patents pending. Document Number: 70785 S09-2276-Rev. D, 02-Nov-09 www.vishay.com 1 Si3831DV Vishay Siliconix FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION S/D (6) TSOP-6 Top View P-Channel MOSFET Body Bias Generator G (3) ESD Protection D/S (4) BODY (1) 3 mm BODY 1 6 S/D SUB 2 5 SUB G 3 4 D/S 2.75 mm SUBSTRATE (GND) (2, 5) Figure 3. Figure 4. Ordering Information: Si3831DV-T1-E3 (Lead (Pb)-free) Si3831DV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage, Source-Drain Voltagea VDS - 7.0 to + 7.0 Source-Body, Drain-Body, Gate-Body Voltage VSB, VDB, VGB 0.3 to - 7.0 VBSUB + 7.0 to - 0.3 Body-Substrate Voltage Continuous Drain-to-Source Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C Pulsed Drain-to-Source Currenta Maximum Power Dissipationb ID IDM TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range PD Unit V ± 2.4 ± 2.0 A ±8 1.5 1.0 W TJ, Tstg - 55 to 150 °C Symbol Range Unit VDS - 5.5 to 5.5 VGD, VGS 0 to - 5.5 VSB, VDB, VGB 0 to - 5.5 RECOMMENDED OPERATING RANGE Parameter Drain-Source Voltagea Gate-Drain, Gate-Source Voltage Source-Body, Drain-Body, Gate-Body Voltage V Drain-to-Source Currenta, b IDS ± 2.4 A Body-Source Current IBS 0 to 10 µA Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb RthJA 80 125 °C/W Notes: a. Bi-directional. b. Surface Mounted on FR4 board, t ≤ 5 s. c. Surface Mounted on FR4 board, Steady-State. www.vishay.com 2 Document Number: 70785 S09-2276-Rev. D, 02-Nov-09 Si3831DV Vishay Siliconix SPECIFICATIONS VBS = 0 V, TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. - 0.4 Typ. Max. Unit nA Static VGS(th) VDS = VGS, ID = - 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = - 5.5 V to + 0.3 V ± 100 Zero Gate Voltage Drain Current IDSS VDS = - 5.5 V, VGS = 0 V, VSB = 0 V -1 VDS = - 5.5 V, VGS = 0 V, VSB = 0 V, TJ = 70 °C -5 On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea VDS = - 3 V, VGS = - 4.5 V -8 VDS = - 3 V, VGS = - 2.5 V -3 V A VGS = - 4.5 V, ID = - 2.4 A 0.130 0.170 VGS = - 2.5 V, ID = - 2.0 A 0.180 0.240 2.0 4.0 VDS = - 5 V, VGS = - 4.5 V, ID = - 2.4 A 0.23 RDS(on) µA Ω Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) tr Rise Time td(off) Turn-Off Delay Time 0.14 VDD = - 3 V, RL = 3 Ω ID ≅ - 1.0 A, VGEN = - 4.5 V, Rg = 6 Ω tf Fall Time nC 12 25 55 110 90 180 85 170 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. GATE BUFFER REFERENCE Body Bias Load IN Figure 5. Gate Buffer Referenced to Most Positive Supply Document Number: 70785 S09-2276-Rev. D, 02-Nov-09 Si3831DV Si3831DV Body Bias Load IN Figure 6. Gate Buffer Referenced to Body Bias Pin www.vishay.com 3 Si3831DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 8 8 VGS = 5 V thru 3 V TC = - 55 °C 2.5 V 25 °C 6 I D - Drain Current (A) I D - Drain Current (A) 6 2V 4 1.5 V 125 °C 4 2 2 1V 0 0 0 1 2 3 4 0 5 0.5 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 250 0.4 200 0.3 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1.0 VGS = 2.5 V 0.2 VGS = 4.5 V Ciss Coss 150 100 0.1 50 Crss 0 0 0 2 4 6 0 8 2 3 4 5 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 6 1.4 4.5 VDS = 3 V ID = 2.4 A 1.3 3.6 2.7 1.8 VGS = 4.5 V ID = 2.4 A 1.2 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 1 1.1 1.0 0.9 0.9 0.8 0 0 0.4 0.8 1.2 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 1.6 2.0 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 70785 S09-2276-Rev. D, 02-Nov-09 Si3831DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.5 RDS(on) - On-Resistance (Ω) I S - Source Current (A) 8 TJ = 25 °C TJ = 150 °C 1 0.1 0.4 0.3 ID = 2.4 A ID = 0.5 A 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 VSD - Source-to-Drain Voltage (V) 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.4 15 0.3 12 0.2 Power (W) VGS(th) Variance (V) 1 ID = 250 µA 0.1 9 6 0.0 3 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 1 TJ - T emperature (°C) 10 Time (s) Single Pulse Power Threshold Voltage 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80 °C/W 0.02 3. TJM - T A = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 30 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Document Number: 70785 S09-2276-Rev. D, 02-Nov-09 www.vishay.com 5 Si3831DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 VGB = - 2.5 V I D - Drain Current (A) 6 2 VGB = 0 V -2 -6 - 10 - 12 -8 -4 0 4 8 12 VDS - Drain-to-Source Voltage (V) Bi-Directional Blocking Drain-Source Voltage Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70785. www.vishay.com 6 Document Number: 70785 S09-2276-Rev. 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