Si3909DV
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)
0.200 at VGS = - 4.5 V
± 1.8
- 20
0.235 at VGS = - 3.6 V
± 1.6
0.340 at VGS = - 2.5 V
± 1.3
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs: 2.5 V Rated
• Compliant to RoHS Directive 2002/95/EC
TSOP-6
Top View
3 mm
S1
G1
1
6
D1
S2
2
5
S1
G2
3
4
D2
S2
G1
G2
2.85 mm
Ordering Information: Si3909DV-T1-E3 (Lead (Pb)-free)
Si3909DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1
D2
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 20
Gate-Source Voltage
VGS
± 12
Continuous Drain Current (TJ = 150 °C)a, b
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)a, b
Maximum Power Dissipationa, b
TA = 25 °C
TA = 70 °C
V
± 1.8
ID
± 1.2
IDM
±7
IS
- 1.05
A
1.15
PD
W
0.73
TJ, Tstg
Operating Junction and Storage Temperature Range
Unit
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Lead
Symbol
t≤5s
Steady State
Steady State
RthJA
RthJL
Typical
Maximum
93
110
130
150
75
90
Unit
°C/W
Notes:
a. Surface Mounted on FR4 board.
b. t ≤ 5 s.
Document Number: 70968
S09-2276-Rev. B, 02-Nov-09
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1
Si3909DV
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
- 0.5
Typ.
Max.
Unit
± 100
nA
Static
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
VDS ≤ - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 1.8 A
0.160
0.200
RDS(on)
VGS = - 3.6 V, ID = - 1.6 A
0.190
0.235
VGS = - 2.5 V, ID = - 1 A
0.280
0.340
gfs
VDS = - 10 V, ID = - 1.8 A
3.6
VSD
IS = - 1.05 A, VGS = 0 V
- 0.83
- 1.1
2.7
4.0
Gate Threshold Voltage
Drain-Source On-State Resistance
a
Forward Transconductancea
Diode Forward Voltage
a
V
VDS = - 16 V, VGS = 0 V
-1
VDS = - 16 V, VGS = 0 V, TJ = 55 °C
-5
-5
µA
A
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
VDS = - 10 V, VGS = - 4.5 V, ID = - 1.8 A
Gate-Drain Charge
Qgd
0.6
Turn-On Delay Time
td(on)
11
Rise Time
Turn-Off Delay Time
tr
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
VDD = - 10 V, RL = 10 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω
IF = - 1.05 A, dI/dt = 100 A/µs
nC
0.4
17
34
50
19
30
24
36
20
40
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 70968
S09-2276-Rev. B, 02-Nov-09
Si3909DV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
8
10
VGS = 4.5 V thru 4 V
TC = - 55 °C
3.5 V
8
I D - Drain Current (A)
I D - Drain Current (A)
6
3V
6
4
2.5 V
2
2V
25 °C
125 °C
4
2
1.5 V
0
0
0
1
2
3
4
0
5
0.5
1.0
2.0
2.5
3.0
3.5
4.0
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
450
0.6
0.5
360
VGS = 2.5 V
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
1.5
0.4
0.3
VGS = 3.6 V
0.2
VGS = 4.5 V
Ciss
270
180
Coss
90
0.1
Crss
0
0
0
1
2
3
4
5
6
0
7
4
8
16
20
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
1.8
4.5
VDS = 10 V
ID = 1.8 A
3.6
1.6
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
12
2.7
1.8
VGS = 10 V
ID = 1.8 A
1.4
1.2
1.0
0.8
0.9
0.6
0
0
0.6
1.2
1.8
2.4
3.0
0.4
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 70968
S09-2276-Rev. B, 02-Nov-09
150
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Si3909DV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.6
10
ID = 1.8 A
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
0.5
TJ = 150 °C
1
TJ = 25 °C
ID = 1.2 A
0.4
0.3
0.2
0.1
0
0.1
0
0.3
0.6
0.9
1.2
0
1.5
1
2
3
4
5
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.6
8
ID = 250 µA
0.4
0.2
Power (W)
V GS(th) Variance (V)
6
0.0
4
2
- 0.2
- 0.4
- 50
0
- 25
0
25
50
75
100
125
150
0.01
1
0.1
TJ - Temperature (°C)
10
30
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
Notes:
0.2
PDM
0.1
0.1
t1
0.05
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 130 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 70968
S09-2276-Rev. B, 02-Nov-09
Si3909DV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70968.
Document Number: 70968
S09-2276-Rev. B, 02-Nov-09
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Revision: 01-Jan-2022
1
Document Number: 91000
