Si4004DY
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)a, e
0.0138 at VGS = 10 V
12
0.0192 at VGS = 4.5 V
12
VDS (V)
20
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
10.6 nC
APPLICATIONS
SO-8
• DC/DC Converters
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
D
G
Top View
S
Ordering Information: Si4004DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
± 20
TC = 70 °C
12e
ID
TA = 25 °C
11b, c
8.8b, c
TA = 70 °C
IDM
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
4.2
IS
2.1b, c
IAS
25
EAS
31
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
mJ
5.0
TC = 70 °C
3.2
PD
TA = 25 °C
W
2.5b, c
1.6b, c
TA = 70 °C
Operating Junction and Storage Temperature Range
A
70
TC = 25 °C
L = 0.1 mH
V
12e
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
Unit
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Maximum Junction-to-Ambientb, d
t ≤ 10 s
RthJA
43
50
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
19
25
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 92 °C/W.
e. Package limited.
Document Number: 70338
S10-1288-Rev. A, 31-May-10
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1
Si4004DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
ΔVDS/TJ
VDS Temperature Coefficient
V
22
ID = 250 µA
mV/°C
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = 250 µA
2.5
V
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
VDS = 20 V, VGS = 0 V
1
VDS = 20 V, VGS = 0 V, TJ = 55 °C
10
Gate-Source Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VDS ≥ 5 V, VGS = 10 V
- 5.5
1.2
30
µA
A
VGS = 10 V, ID = 11 A
0.0115
0.0138
VGS = 4.5 V, ID = 9.3 A
0.0160
0.0192
VDS = 10 V, ID = 11 A
25
Ω
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
1280
VDS = 10 V, VGS = 0 V, f = 1 MHz
440
VDS = 10 V, VGS = 10 V, ID = 11 A
21.6
33
10.6
16
195
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
VDD = 10 V, RL = 1.1 Ω
ID ≅ 8.8 A, VGEN = 4.5 V, Rg = 1 Ω
3.6
7.2
15
25
12
20
17
26
9
18
7
14
10
20
VDD = 10 V, RL = 1.1 Ω
ID ≅ 8.8 A, VGEN = 10 V, Rg = 1 Ω
tf
Fall Time
0.7
td(on)
td(off)
Turn-Off Delay Time
nC
3.1
f = 1 MHz
tf
tr
Rise Time
4.2
VDS = 10 V, VGS = 4.5 V, ID = 11 A
td(on)
Turn-On Delay Time
pF
23
35
9
18
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward
Currenta
Body Diode Voltage
IS
TC = 25 °C
4.2
ISM
VSD
70
IS = 8.8 A
0.84
1.2
A
V
Body Diode Reverse Recovery Time
trr
26
39
ns
Body Diode Reverse Recovery Charge
Qrr
15
23
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = 8.8 A, dI/dt = 100 A/µs, TJ = 25 °C
13
13
ns
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 70338
S10-1288-Rev. A, 31-May-10
Si4004DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
70
10
VGS = 10 V thru 5 V
8
ID - Drain Current (A)
ID - Drain Current (A)
56
VGS = 4 V
42
28
14
6
TC = 25 °C
4
TC = 125 °C
2
VGS = 3 V
TC = - 55 °C
0
0
0
0.5
1.0
1.5
2.0
0
0.7
1.4
2.1
2.8
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.027
3.5
1600
0.022
1200
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
Ciss
VGS = 4.5 V
0.017
VGS = 10 V
0.012
800
Coss
400
Crss
0.007
0
0
14
28
42
56
70
0
8
ID - Drain Current (A)
16
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.5
10
ID = 9.3 A
VGS = 4.5 V
8
1.3
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
ID = 11 A
VDS = 5 V
6
VDS = 10 V
4
VDS = 16 V
ID = 11 A
VGS = 10 V
1.1
0.9
2
0
0
5
10
15
20
25
0.7
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 70338
S10-1288-Rev. A, 31-May-10
150
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Si4004DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.04
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 11 A
10
TJ = 150 °C
TJ = 25 °C
1
0.03
0.02
TJ = 25 °C
0.01
0.1
0
0.3
0.6
0.9
1.2
TJ = 125 °C
0
1.5
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
2.3
30
24
2.0
18
Power (W)
VGS(th) (V)
ID = 250 μA
1.7
12
1.4
6
1.1
- 50
- 25
0
25
50
75
100
125
0
0.01
150
0.1
1
10
100
TJ - Junction Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
1000
100
Limited by RDS(on)*
100 μs
ID - Drain Current (A)
10
1 ms
10 ms
1
100 ms
1s
10 s
0.1
DC
TA = 25 °C
Single Pulse
0.01
0.1
BVDSS Limited
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 70338
S10-1288-Rev. A, 31-May-10
Si4004DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
18.0
ID - Drain Current (A)
13.5
Package Limited
9.0
4.5
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*
2.0
6.0
1.6
Power (W)
Power (W)
4.5
3.0
1.5
1.2
0.8
0.4
0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 70338
S10-1288-Rev. A, 31-May-10
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Si4004DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.1
0.2
Notes:
0.1
PDM
t1
0.05
t2
t1
1. Duty Cycle, D = t
2
2. Per Unit Base = RthJA = 92 °C/W
0.02
3. TJM - TA = PDMZthJA (t)
Single Pulse
0.01
10-4
-3
10
10
4. Surface Mounted
-2
-1
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70338.
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Document Number: 70338
S10-1288-Rev. A, 31-May-10
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Revision: 01-Jan-2022
1
Document Number: 91000
